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  • 1
    Digitale Medien
    Digitale Medien
    Effect of radiation on the characteristics of MIS structures containing rare-earth oxides (1997)
    Springer
    Semiconductors 31 (1997), S. 752-755 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract The results of experimental studies of the effect of γ-irradiation on the electrical properties of MIS structures containing the rare-earth oxides Y2O3, Dy2O3, Tb2O3, Gd2O3, and Lu2O3 are reported. The static characteristics (current-voltage, capacitance-voltage) and dynamic characteristics (transient characteristics, diagrams of oscillatory regimes) of the structures before and after irradiation with doses D=104–106 rad are examined. It is found that the irradiation dose D=106 rad does not produce any substantial degradation of the characteristics of the structures. The radiation-induced changes observed in the experimental samples are consistent with existing data for MIS structures with SiO2 as the insulator.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187085
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Study of the dynamical characteristics of an insulator-semiconductor interface (1998)
    Springer
    Semiconductors 32 (1998), S. 1190-1195 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract A study of charge relaxation processes in metal-insulator-semiconductor structures containing the rare-earth oxides Gd2O3 and Lu2O3 as the insulator has been performed using the deep-level transient spectroscopy (DLTS) method in combination with a study of nonlinear oscillations in the metal-insulator-semiconductor structure connected to an external inductive circuit. On the basis of the DLTS results and the variation with temperature of the configuration of the period multiplicity regions of the controlling parameters (the amplitude and frequency of the applied voltage) it is shown that the generation of nonlinear oscillations in a metal-insulator-semiconductor structure is governed by the properties of the insulator-semiconductor interface, in particular, the density of surface states and the capture cross sections.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187590
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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