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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2892-2898 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Combining scanning electron microscopy and electron-beam-induced current imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1918-1922 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A new beetle-like scanning tunneling microscope is presented that operates under ultrahigh vacuum conditions and at temperatures down to 7 K. Magnetic fields up to 8 Tesla can be applied using a movable superconducting magnet. The entire setup is described in detail and test measurements are presented.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8166-8173 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An extremely sensitive miniature torque magnetometer using Si p-doped piezoresistive cantilevers is described. The magnetization m↘ of very small magnetic or superconducting samples (≤1 μg) deposited on the cantilever can be measured via the torque τ↘=m↘×B↘ produced on them by an applied field B. The high resolution in the lever deflection of the order of 0.1 A(ring) corresponds to a torque sensitivity of the order of Δτ(approximately-equal-to)10−14 Nm. In a homogeneous field of 1 T this device allows magnetic moments as small as Δm(approximately-equal-to)10−14 Am2 to be measured, a value far smaller than that measurable by the best commercial superconducting quantum interference device magnetometers. Measurements performed on microcrystals of the high-Tc superconductors Bi2Sr2Ca1Cu2O8 and Hg1Ba2Ca3Cu4O10 in the static and dynamic modes demonstrate the excellent performance of this device at low temperature and in magnetic fields ranging between a few mT and 5 T. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3199-3203 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A macroscopic cantilever for capacitive torque magnetometry has been developed and tested. It is based on torsion arms in order to obtain better damping against external vibrations than with ordinary cantilevers of similar size but anchored on one side. Microfabricated out of silicon-on-insulator wafers by deep reactive ion etching, the sensor consists of a long (14 mm) and thin (40 μm) cantilever with two capacitive plates, anchored at its center to a rigid frame by two torsion bars having a rectangular cross section (80×40 μm2). By comparing the theoretical and experimental resonance frequencies in three different oscillation modes, we show that the elastic properties of the torque sensor can be evaluated with good accuracy. Calibrations performed with a piece of Fe2O3 audiotape and a cylindrical NdFeB magnet yield a torque sensitivity better than 5×10−13 N m under optimized conditions. This device can also be used as a sensitive Gauss meter to detect magnetic fields down to 10 nT. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 139-141 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin oxide films with perovskite or related structures and with transition metal doping show a reproducible switching in the leakage current with a memory effect. Positive or negative voltage pulses can switch the resistance of the oxide films between a low- and a high-impedance state in times shorter than 100 ns. The ratio between these two states is typically about 20 but can exceed six orders of magnitude. Once a low-impedance state has been achieved it persists without a power connection for months, demonstrating the feasibility of nonvolatile memory elements. Even multiple levels can be addressed to store two bits in such a simple capacitor-like structure. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3090-3092 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The compound URu3 has been found to exhibit superconductivity below 0.15 K. Polycrystalline specimens of URu3 and two other U-compound superconductors, UPt3 and UCo, have been investigated by means of ac magnetic susceptibility measurements in zero and finite magnetic fields. Electrical resistivity, dc magnetic susceptibility, and specific-heat measurements on URu3 and UCo reveal non-heavy-fermion behavior for both compounds and evidence for relatively large exchange enhancement of the Pauli paramagnetic susceptibility for UCo.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3099-3103 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The experimental evidence for a new magnetic field induced superconducting state in the pseudoternary Eu-Sn molybdenum chalcogenides is presented. This state results from the Jaccarino–Peter compensation mechanism which accounts correctly for the observed Hc2-T phase diagrams. Using a multiple pair-breaking theory to analyze the data, we discuss the critical parameters needed to observe this phenomenon under different conditions, in these materials and at higher temperatures.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 278-285 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present data obtained on a set of symmetric GaAs/AlGaAs double-barrier quantum-well structures in which the thickness of the AlGaAs barriers has been systematically varied from 31 to 7.5 nm. Low-temperature I(V ) characteristics, temperature dependencies, and magnetotunneling have been investigated. Our data suggest a dominance of sequential tunneling processes in the range investigated and point to interface roughness in the well as the possible cause for the large valley currents. Our best devices exhibit a current peak-to-valley ratio of about 20.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 900-903 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data obtained from a set of asymmetric GaAs/AlGaAs double-barrier resonant tunneling structures is presented. Low-temperature I(V) characteristics, temperature dependencies, and magnetotunneling have been investigated. The data confirm conclusions drawn in previous studies on symmetric structures, lending further support to the description of tunneling in terms of sequential processes and momentum randomization most likely induced by interface roughness scattering in the well.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4312-4316 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data obtained on a set of GaAs/AlGaAs double-barrier quantum-well resonant tunneling structures are compared with model calculations of the ideal case where scattering is negligible and tunneling is coherent throughout the entire structure. The comparison points to interface roughness in the well as the most likely cause for the observed large valley currents. The currents at low biases, before resonance sets in, are also studied. Their magnitude is found to be consistent also with the sequential tunneling picture.
    Materialart: Digitale Medien
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