Bibliothek

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
  • 1985-1989  (18)
Datenquelle
Materialart
Erscheinungszeitraum
Jahr
Schlagwörter
  • 1
    Digitale Medien
    Digitale Medien
    Detection of pulse to pulse timing jitter in periodically gain-switched semiconductor lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1971-1973 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Methods to assess pulse to pulse timing jitter in periodicallly gain-switched semiconductor lasers are investigated. The power spectrum of the optical pulse train for mutually incoherent fluctuations of the turn-on delay time and the pulse amplitude is calculated. The result shows that a measurement of the power spectrum alone is not sufficient for the characterization of the inherent timing jitter. Additional knowledge of the optical waveform and the transfer characteristics of the detection system is necessary.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101370
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Influence of coupling of wells on spontaneous emission line shape in GaAs/GaAlAs multiple quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 798-800 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The results of a comparative study of the low-temperature luminescence line shape of molecular beam epitaxially grown GaAs/GaAlAs coupled and uncoupled quantum wells (QW's) are presented. A pronounced spectral narrowing of the emission line with increasing coupling of QW's is found. A detailed model for spontaneous emission line shapes for real superlattices is established: The superlattice density of states is calculated in the framework of envelope function approximation. Interface roughness yields Gaussian distribution of layer thicknesses resulting in a broadened density of states. The variance of this distribution function is a measure of interface quality. The reduction of the variance with increased coupling is explained by an enhanced excitonic averaging mechanism in superlattices.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.99287
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    Substructure in short optical pulses from gain-switched semiconductor lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1600-1602 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The spike-like substructure in picosecond optical pulses from gain-switched multimode injection lasers is analyzed. A theoretical description based on the interference of the randomly phased longitudinal laser modes and the transient shift of the envelope of the mode spectrum under gain-switched operation is presented. Single shot, streak camera records and autocorrelation traces are simulated, describing all essential experimental features of the substructure like its random variation from pulse to pulse and inherent periodicity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102249
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 4
    Digitale Medien
    Digitale Medien
    Influence of the As:Ga flux ratio on growth rate, interface quality, and impurity incorporation in AlGaAs/GaAs quantum wells grown by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 623-625 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The influence of group V:III flux ratio on the molecular beam epitaxy growth process of AlGaAs/GaAs quantum wells is studied by means of photoluminescence, using a careful line shape analysis. Upon enlarged group V flux, a sublinear increase of the growth rate and a reduction of shallow impurity incorporation is found, with, however, an increase of deep trap concentration, attributed to EL2.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100898
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 433-435 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaAs/AlGaAs quantum wells (QWs) were grown by molecular beam epitaxy on GaAs (100) substrates patterned with ridges and grooves in the [011¯] direction. Low-temperature cathodoluminescence was used to measure the Al fraction and QW thickness on top of the ridges and grooves as a function of ridge and groove width. Surface diffusion during growth depletes Ga from the side facets while increasing the incorporation of Ga on the (100) sections of ridges and grooves. The QW thickness on top of a ridge grown at 710 °C increases from 72 to 95 A(ring), and the Al fraction x decreases from x=0.33 to x=0.29 as the ridge width is narrowed from 30 to 4 μm. Graded refractive index separate confinement heterostructure lasers with nominally 70 A(ring) QWs and Al0.2Ga0.8As barriers were grown on patterned substrates at 695 and 725 °C. Lasers fabricated on the overgrown 4-μm-wide ridges have a 20 meV decrease in emission energy compared to laser diodes on 30 μm ridges.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100943
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 6
    Digitale Medien
    Digitale Medien
    First observation of a titanium midgap donor level in In0.53Ga0.47As p-n diodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 645-647 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Growth of Ti-doped In0.53Ga0.47As using liquid phase epitaxy is reported. The energy position of the Ti4+/Ti3+ deep donor level in In0.53Ga0.47As p-n diodes is precisely identified for the first time by deep level transient spectroscopy. The near midgap location of this level at EC−ET =0.37 eV and the potential of InGaAs:Ti of superior thermal stability make it a promising dopant for growing semi-insulating In0.53Ga0.47As. A recent model suggesting the energy positions of transition metals not to vary across heterojunctions is tested and found to be at least qualitatively valid for this low spin transition metal.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101810
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 7
    Digitale Medien
    Digitale Medien
    Picosecond spectra of gain-switched AlGaAs/GaAs multiple quantum well lasers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2263-2265 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The temporal waveform of the single longitudinal modes emitted by gain-switched AlGaAs/GaAs multiple quantum well lasers is analyzed by means of a synchroscan streak camera system coupled to a spectrograph. It is found that only 50% of the number of the longitudinal modes contributing to the time-averaged spectrum are present during the first relaxation oscillation. The time-dependent shift of the envelope of the mode spectrum is quantitatively explained by a spectral shift of the gain maximum as a function of the time-varying charge carrier density. The results demonstrate that, for the analysis of transient multimode spectra of gain-switched injection lasers, inclusion of the energy dependence of the gain and gain compression is mandatory.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100248
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 8
    Digitale Medien
    Digitale Medien
    Simulation of electron beam induced current at GaAs/AlGaAs heterojunctions under forward bias (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2121-2123 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The influence of the charge collecting barrier on the electron beam induced current (EBIC) is studied by numerical solution of the current transport equations in the case of AlGaAs/GaAs heterojunctions. EBIC line scans are simulated as a function of external bias. It is found that the signal cannot be reduced to zero value, in accordance with experimental results. This effect is explained by a non-negligible potential drop outside of the space-charge region under high injection conditions. As a consequence, a more careful treatment is needed when using EBIC to determine band offsets.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98966
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 9
    Digitale Medien
    Digitale Medien
    High-precision band-gap determination of Al0.48In0.52As with optical and structural methods (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 140-141 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The band gap of Al0.48In0.52As lattice matched to InP is determined with high precision at 1.5 and 300 K as 1.511 and 1.439 eV, respectively. This determination, which resolves a long lasting dispute on the most fundamental material parameter of this semiconductor, is based on a comparative study of temperature-dependent photoluminescence, wavelength-dispersive x-ray analysis, and triple-crystal x-ray diffractometry.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102125
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 10
    Digitale Medien
    Digitale Medien
    Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1765-1767 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The structural properties of pseudomorphic In0.23Ga0.77As/GaAs single quantum wells are investigated with x-ray double-crystal diffractometry. Anisotropic tilting of lattice planes along dislocations and anisotropic reflectivity of fully relaxed domains coexisting with strained domains are reported for the first time. Due to the anisotropic strain relaxation the crystal symmetry changes from tetragonal in the fully strained case to monoclinic in a partially relaxed quantum well.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102212
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...