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Digitale Medien

Giant negative magnetoresistance in a nonmagnetic semiconductor (1999)

Henriques, A. B. ; Oliveira, N. F. ; Obukhov, S. A. ; [weitere]

Springer

JETP letters 69 (1999), S. 386-391

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Details

ISSN: 1090-6487

Schlagwort(e): 75.30.Vn ; 72.20.My

Quelle: Springer Online Journal Archives 1860-2000

Thema: Physik

Notizen: Abstract Studies of a classical III–V semiconductor (InSb) doped with 3d magnetic ions (Mn2+, having a localized spin S=55/2) reveal some unexpected transport properties. It is found that the transition from the metallic to the low-temperature insulator phase occurs at an impurity concentration N Mn∼N cr=2× 1017 cm−3 and a temperature T〈T cr∼1 K. Under these conditions a giant negative magnetoresistance arises. The experimental results can be explained in terms of the onset of a hard Mott-Hubbard gap Δ in the impurity band formed by the shallow manganese acceptor in InSb at N Mn∼N cr. A model describing the gap formation is proposed.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1134/1.568039

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