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  • 1
    ISSN: 1437-1596
    Schlagwort(e): Mass disaster ; Victim identification ; Forensic odontology ; Air disaster
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Medizin , Rechtswissenschaft
    Notizen: Abstract The authors report on the contribution of odontological identification of the flight ALIT 5148 air disaster victims, which occurred on 20th January 1992. The identification procedure was difficult due to large numbers of bodies and mutilations and required the involvement of multidisciplinary teams composed of odontologists, forensic pathologists, radiologists and biologists. The authors set up a simple, discriminant classification which was easy to handle by a multidisciplinary team. Four groups were defined according to the matching characteristics between ante and post mortem data. Perfect matching characteristics between ante and post mortem data were achieved in only 44 cases (Group A). Partial matching characteristics between ante and post mortem data were achieved in 12 cases (Group B). In 29 cases, the insufficiency or absence of odontological data (Group C and D) did not enable the victim to be identified. The results of the investigations showed that the dental examination alone enabled 17 victims to be identified and by including a morphological examination the figure reached 33. By the end of the investigations, 85 of the 87 victims were positively identified. Odontological identification is an essential, accurate and rapid method with allows a body to be identified from its dental characteristics. This anthropometrical method of identification is included with the descriptive and the biological methods. The authors present their experience in performing a formal identification of 44 victims in less than 15 days.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    ISSN: 1432-0630
    Schlagwort(e): 72.40 ; 73.60 ; 81.15 ; 81.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A novel combination of methods is shown to produce semiconducting WS2 thin films with properties close to those of a single crystal. The first step requires the deposition of a very thin Ni layer on a quartz substrate. On top of it an amorphous, sulphur rich, (WS3 +x ) thin film is deposited by reactive rf sputtering. The final annealing step in an argon atmosphere yields 200 nm thick WS2 films. X-ray diffraction shows that the films crystallize in the 2H-WS2 phase and are perfectly oriented with the (002) basal planes parallel to the substrate. Residual W18O49 needles andβ-NiS grains are detected by transmission electron microscopy. The dc conductivity and its activation energy have values typical of bulk crystals. The optical absorption spectrum measured at Room Temperature (RT) shows excitonic peaks at the same energies as in a single crystal. RT photoconductivity measured as a function of wavelength is shown to result from interband transitions.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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