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  • 1
    Digitale Medien
    Digitale Medien
    Mechanisms of Steroid Oxidation by Microorganisms. XII. Metabolism of Hexahydroindanpropionic Acid Derivatives* (1967)
    s.l. : American Chemical Society
    Biochemistry 6 (1967), S. 1395-1403 
    Details
    ISSN: 1520-4995
    Quelle: ACS Legacy Archives
    Thema: Biologie , Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/bi00857a023
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  • 2
    Digitale Medien
    Digitale Medien
    Surface-micromachined free-space micro-optical systems containing three-dimensional microgratings (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2135-2137 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Free-space micro-optical systems on a chip containing three-dimensional microgratings have been demonstrated using surface-micromachining technique. The micrograting is integrated with a rotary stage, a collimating micro-Fresnel lens, and an edge-emitting laser held by three-dimensional alignment structures on a single Si substrate. Diffraction patterns for various grating rotation angles are observed. Another optical interconnect module consisting of three cascaded microgratings is also demonstrated. The micrograting is a basic building block for many micro-optical systems and is very attractive for applications in microspectrometers, free-space optical interconnect, optoelectronic packaging, and wavelength-division multiplexed integrated micro-optical systems. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114744
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  • 3
    Digitale Medien
    Digitale Medien
    Low-loss GaAs/AlGaAs optical waveguides and phase modulator on silicon substrate grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 802-804 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on the fabrication and the characterization of low-loss, single-mode GaAs/AlGaAs single heterostructure ridge waveguides and a linear electro-optic phase modulator on silicon substrate. The waveguides and the phase modulator were grown by molecular beam epitaxy and were characterized at a 1.3 μm wavelength. The average TE mode propagation loss of 1.24 dB/cm, obtained for a 6-μm-wide ridge waveguide, is the lowest loss so far reported. The measured phase shift efficiency of the phase modulator was 3.5°/V mm.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102668
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  • 4
    Digitale Medien
    Digitale Medien
    Highly efficient separate-confinement PpinN GaAs/AlGaAs waveguide phase modulator (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1865-1867 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report a high-efficiency PpinN GaAs/AlGaAs waveguide phase modulator for high-speed operations. By introducing p- and n-GaAs layers beside the intrinsic GaAs layer of a P-i-N double heterostructure, the absorption edge-related effect, hardly used in P-i-N phase modulators, is utilized. We demonstrate a high phase shift efficiency of 37.5°/V mm at 1.3 μm wavelength. Although this corresponds to the highest expeirmental value reported for reverse-biased GaAs/AlGaAs phase modulators, our device operates with a low junction and a very low dynamic capacitance.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102155
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  • 5
    Digitale Medien
    Digitale Medien
    Hydrogen barriers for SrBi2Ta2O9-based ferroelectric memories (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1372-1374 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on a hydrogen barrier necessary for a conventional passivation process of integrated SrBi2Ta2O9 (SBT)-based memories. The passivation process significantly degraded electrical properties of the memories, resulting from hydrogen damage in the SBT capacitors. Metallic films (Ti, TiN, and Al) were investigated as a hydrogen barrier during the passivation process. The Ti(〉500 Å) hydrogen barrier only showed the electrical properties of memories free from hydrogen damage. The formation of stable hydrides and the suppressed diffusion of hydrogen through the Ti films during the passivation processes resulted in sufficient switching polarization, low leakage current, and good reliabilities at high temperature. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1289913
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  • 6
    Digitale Medien
    Digitale Medien
    Effect of roughness slope on exchange biasing in NiO spin valves (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2162-2164 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Exchange biasing field Hex and coercive field Hc of the exchange-biased NiO spin valves deposited over differently etched glass substrates and glass Si3N4 buffer layers were measured in order to investigate the effect of roughness at the NiO/NiFe interfaces. The magnetoresistive (MR) ratio, Hex, and Hc were not influenced by etching time, even though the rms roughness Rrms increased from 4.7 to 33 Å. However, the MR ratio, Hex, and Hc increased with Si3N4 buffer thickness, even when the Rrms had almost the same values. To explain this ambiguous dependence of Rrms, we consider an effect of the average slope of roughness instead of Rrms in an atomic force microscope image. The steep slope of roughness played an important role in Hex and Hc in NiO spin valves due to an increase in magnetostatic energy and the decrease in antiferromagnetic domain size. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.121308
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  • 7
    Digitale Medien
    Digitale Medien
    Impurities in dielectrics and hydrogen barriers for SrBi2Ta2O9-based ferroelectric memories (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2064-2066 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report results of systematic investigation of impurities in dielectrics and hydrogen barriers (Ti and Al2O3 films) during the integration process of SrBi2Ta2O9-based ferroelectric memories. The capacitors integrated with Ti hydrogen barriers are not electrically degraded regardless of the annealing conditions of the subdielectrics. On the contrary, electrical properties of the capacitors using Al2O3 hydrogen barriers significantly depend on the annealing temperatures for subdielectrics. It turned out that interaction of the dielectrics with plasma during sputtering of the Ti films caused fragmentation of the moisture in the dielectrics and absorption of the hydrogen in the Ti films, making annealing irrelevant. However, the alumina films blocked both hydrogen and moisture in the subdielectrics during the passivation process, resulting in dependence on the annealing temperatures. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1403664
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  • 8
    Digitale Medien
    Digitale Medien
    Self-aligned hybrid integration of semiconductor lasers with micromachined micro-optics for optoelectronic packaging (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2946-2948 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Novel self-aligned hybrid integration of semiconductor lasers with three-dimensional micro-optical components has been demonstrated. The self-alignment structures are fabricated integrally with other three-dimensional micro-optical elements such as micro-Fresnel lenses, mirrors, and gratings on a single Si chip by surface micromachining technology. The Si substrate serves as a free-space micro-optical bench for active and passive optoelectronic components. A divergent beam emitted from an edge-emitting semiconductor laser has been successfully collimated by the integrated micro-Fresnel lens. The integration scheme offers a new approach for optoelectronic packaging and a new technology platform for integrating complete free-space micro-optical system on a single chip. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114238
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  • 9
    Digitale Medien
    Digitale Medien
    An abutment screw loosening study of a Diamond Like Carbon-coated CP titanium implant (2005)
    Oxford, UK : Blackwell Science Ltd
    Journal of oral rehabilitation 32 (2005), S. 0 
    Details
    ISSN: 1365-2842
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: summary  The aim of this study was to quantify the extent of abutment screw loosening and thus understand the role of frictional and wear factors in abutment screw loosening by using a cyclic loading device to compare Diamond Like Carbon (DLC)-coated and non-coated implants. The properties of DLC films, including hardness, wear resistance, chemical stability, and biocompatibility, are similar to those of real diamond materials. In this study, a 1-μm thick DLC film served to protect and lubricate a layer of commercially-pure titanium affixed to the top of a dental implant (external hexagon-shaped implant). A cyclic loading force was then applied to the top of the prosthetic portion of the implants in order to determine the difference in looseness of the titanium abutment screw between ten DLC-coated implants and ten non-coated implants. The abutment screw loosening tests were performed with 100 N of force at a frequency of 20 Hz. Data indicate that implants with a DLC coating are more resistant to an applied force (P = 0·002) than are those without the coating. We hope these results will be useful for preventing implant abutment screw loosening.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1365-2842.2004.01475.x
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  • 10
    Digitale Medien
    Digitale Medien
    A case of porphyria cutanea tarda in association with idiopathic myelofibrosis and CREST syndrome (2001)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 144 (2001), S. 0 
    Details
    ISSN: 1365-2133
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: We report a 56-year-old Korean woman with porphyria cutanea tarda (PCT), showing multiple scarring bullae and hypertrichosis on sun-exposed areas of skin with postinflammatory hyperpigmentation. Sclerodermoid changes were also found on both hands, the face and neck. The patient had suffered from CREST syndrome, manifesting with Raynaud’s phenomenon and sclerodactyly, for more than 15 years. Anticentromere antibody was positive. She had presented with splenomegaly 3 years before the development of PCT, and was diagnosed as having idiopathic myelofibrosis, based on bone marrow biopsy. In summary, she had had CREST syndrome for 15 years and later developed idiopathic myelofibrosis and PCT. This is the first reported case of PCT in association with idiopathic myelofibrosis and CREST syndrome.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1046/j.1365-2133.2001.03971.x
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