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  • 1
    Digitale Medien
    Digitale Medien
    Photoluminescence of II–IV–V2 and I–III–VI2 crystals passivated in a sulfide solution (1998)
    Springer
    Technical physics letters 24 (1998), S. 875-876 
    Details
    ISSN: 1090-6533
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract An investigation was made to determine how chemical treatment of the surface of II–IV–V2 and I–III–VI2 semiconductor crystals (such as CdSiAs2, ZnSnP2, CuGaSe2, and r-AgInS2) using a solution of ammonium sulfide in tert-butyl alcohol influences their photoluminescence properties. It is shown that the photoluminescence intensity is enhanced substantially after treatment with the spectral profile and energy position of the band peaks remaining unchanged.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1262298
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  • 2
    Digitale Medien
    Digitale Medien
    Photovoltaic properties of semiconductor-protein heterocontacts (1999)
    Springer
    Technical physics letters 25 (1999), S. 328-330 
    Details
    ISSN: 1090-6533
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract It is found that heterocontacts consisting of a semiconductor (e.g., InSe) and a natural protein exhibit a broad-band photovoltaic effect and do not display an appreciable shortwavelength drop in the spectral range from 1.2 to 3.7 eV. The maximum photosensitivity of such structures, which reaches 2 mA/W at T=300 K, is observed when they are illuminated on the protein side. It is concluded that the structures created can be employed as broad-band photosensors of optical radiation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1262469
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  • 3
    Digitale Medien
    Digitale Medien
    Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment (1998)
    Springer
    Semiconductors 32 (1998), S. 1075-1076 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract Plasma processing of single-crystal wafers of gallium arsenide and gallium phosphide is employed to obtain thin wideband layers. The spectral dependence of the photoluminescence of the layers and of the photosensitivity of the corresponding layer/substrate structures is investigated. An analysis of the results of these studies gives us reason to believe that the described process leads to replacement of arsenic and phosphorus atoms by nitrogen and to the formation of wideband layers of solid solutions on the surface of the indicated semiconductors.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187570
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  • 4
    Digitale Medien
    Digitale Medien
    Photoelectric properties of GaN/GaP heterostructures (1998)
    Springer
    Semiconductors 32 (1998), S. 1077-1079 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract Thin interference layers of n-GaN were grown on n-and p-type GaP substrates with (100) and (111) orientations by vapor phase epitaxy in an open chloride system. Photosensitivity spectra of isotypic and anisotypic heterojunctions under linear polarized light from the side of the wideband component (GaN) at oblique incidence were investigated. Induced polarized photosensitivity was observed, and peculiarities of this photosensitivity caused by interference in the GaN layers are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187571
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  • 5
    Digitale Medien
    Digitale Medien
    Photoluminescence of anodized layers of CdSiAs2 (1997)
    Springer
    Semiconductors 31 (1997), S. 200-201 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract CdSiAs2 belongs to the II-IV-V2 group of chalcopyrite semiconductors with a direct band gap of 1.51 eV at T=300 K. In this paper we investigate the spectral dependence of the steady-state photoluminescence of CdSiAs2 anodized layers. These layers were fabricated by electrochemical anodization of unoriented p-type CdSiAs2 wafers in an solution of HF in ethanol. It is found that a broad photoluminescence band with a maximum at the photon energy ℏω=1.82 eV at 300 K arises. This band lies deep in the fundamental absorption region of CdSiAs2 crystals. The dependence of the parameters of the photoluminescence spectra of anodized Si, GaAs, and CdSiAs2 layers is discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187108
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  • 6
    Digitale Medien
    Digitale Medien
    Optical absorption and photosensitivity of CuInxGa1-x Se2 thin film structures (1998)
    Springer
    Semiconductors 32 (1998), S. 385-388 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract Thin polycrystalline films of CuInxGa1−x Se2 (0⩽x⩽1) were fabricated by pulsed laser evaporation. Results of measurements of the optical properties, photocurrent polarization indicatrices, and spectral dependence of the photoconversion quantum yield of In-p-CuInxGa1−x Se2 structures are discussed. A window effect in the photosensitivity has been observed, and it is concluded that it is possible to use CuInxGa1−x Se2 thin films as photoconverters of solar radiation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187416
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  • 7
    Digitale Medien
    Digitale Medien
    Fabrication and photosensitivity of AgInSe2/III-VI isotypic heterojunctions (1999)
    Springer
    Semiconductors 33 (1999), S. 1097-1099 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract AgInSe2 thin films on glass substrates have been prepared by pulsed laser deposition. Rectifying heterojunctions with a pronounced photovoltaic effect have been fabricated for the first time by placing such films in optical contact with layered III-VI (InSe, GaSe) semiconductors. The maximum photosensitivity of such heterostructures is 10–103 V/W. It is concluded that the prepared structures can be used as wideband selective photoreceivers.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187873
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  • 8
    Digitale Medien
    Digitale Medien
    Optoelectronic effects in semi-insulating CdTe single crystals and structures based on them (1999)
    Springer
    Semiconductors 33 (1999), S. 518-522 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract The authors describe a gas-transport reaction method they recently developed using the compounds NH4Cl (Br, I) as transport agents. Using this method, they were able to grow semiinsulating cadmium telluride single crystals with carrier concentrations p=108–1010 cm−3 at T=300 K. These crystals were used to fabricate In-CdTe surface-barrier structures with peak voltaic photosensitivities of ∼105 V/W. Their investigations of the emission properties of homogeneous crystals at T=77K and distinctive features of their photosensitivity spectra revealed that these material characteristics derive from the use of Cl, Br, and I as dopants. By illuminating their In-CdTe structures with linearly polarized light at oblique incidence, they generated induced photopleochroism, which was measured and used to determine the refraction index of the material, which is found to be n=2.8. The paper concludes with a discussion of how these structures can be used as photodetectors of natural and linearly polarized light.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187720
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  • 9
    Digitale Medien
    Digitale Medien
    Fabrication and properties of In2O3/CdS/CuInSe2 heterostructures (1999)
    Springer
    Semiconductors 33 (1999), S. 736-739 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract Heterostructures are prepared by the vacuum thermal evaporation of CdS〈In〉 onto heated p-CuInSe2 substrates. An In2O3 layer is deposited on the wide-gap component of each structure by magnetron sputtering. The photosensitivity of the heterostructures in ambient light and in linearly polarized radiation is investigated. The photosensitivity of higher-quality structures attains 80 mA/W at T=300 K. The heterostructures exhibit induced photopleochroism, and the laws governing its angular and spectral dependences are discussed. It is concluded that the prepared heterostructures have possible applications as narrowly selective photoanalyzers of linearly polarized radiation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187772
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  • 10
    Digitale Medien
    Digitale Medien
    Fabrication and photoelectronic properties of ZnTe single crystals and Schottky diodes (2000)
    Springer
    Semiconductors 34 (2000), S. 1275-1280 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract n-and p-ZnTe single crystals were grown by the method of the gaseous-phase reactions using various halogen-containing agents (NH4Cl, NH4Br, and NH4I) as the carrier gases. Luminescent properties of the crystals were studied in relation to the type of the carrier gas. In/ZnTe Schottky barriers were formed. The photovoltaic effect was studied in the obtained structures for cases of natural and linearly polarized radiation. It was ascertained that the induced photopleochroism of the Schottky barriers is controlled by the angle of incidence of radiation and remains unchanged in the region of high photosensitivity. It is concluded that the obtained barriers may be used as broadband photosensors of linearly polarized radiation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1325422
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