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  • 1
    Digitale Medien
    Digitale Medien
    Luminescence and electron paramagnetic resonance studies of white-light emitting SrS: Pr, F thin film electroluminescent devices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1754-1757 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The fluorescence emission and excitation spectra of white-light emitting SrS: Pr, F thin film electroluminescent devices have been investigated. It was determined from the results obtained that the dominant electroluminescence mechanism was that the ionization of Pr3+ centers occurs first, then subsequently recombination with electrons occurs, and finally Pr3+ center transitions give rise to luminescence. The emission mechanism of SrS: Pr, F seems to be the same as that of a SrS: Pr, K electroluminescent device, except for the appearance of strong peaks around 610–670 nm. The impurity excitation peak in the lower excitation energy, longer-wavelength region in the FL spectrum may be an important factor for the selection of an effective white-light emitting EL material. The electron paramagnetic resonance experiment of SrS: Pr, F was performed on powder and thin film specimens. The hyperfine structure of an isolated Mn2+ ion was observed in this SrS: Pr, F thin film. This Mn center which was substituted for Sr, seems to contribute to the strong red emission in the white EL spectrum.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356366
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  • 2
    Digitale Medien
    Digitale Medien
    Studies of anisotropic and giant magnetoresistance in Co/Cu(111) epitaxial multilayers : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6276-6278 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Co/Cu(111) multilayers, [Co(17 A(ring))/Cu(8 A(ring)〈tCu〈14 A(ring))]30, have been prepared on Co(70 A(ring)) buffer layers on Al2O3(0001) substrates by molecular beam epitaxy. From the longitudinal and transverse magnetoresistance (MR) measurements, it is observed that MRs consist of two components with a small anisotropic MR (〈2%) component at low field sitting on top of the giant MR (up to 22%) component at higher field. The AMR effect strongly correlates with the abundance of hcp stacking of Co, which tends to decrease with the increasing of Cu spacer thickness. The AMR saturation fields (1–3 kOe) coincides with those of the magnetization. It is suggested that the observed AMR effect is due to scattering from the hcp-phase Co layers in the multilayers. This together with the large saturation field (30–40 kOe) obtained from the entire MR curves indicate that the observed GMR effect may result from the Co-Cu interfacial spin-dependent scattering. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362035
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  • 3
    Digitale Medien
    Digitale Medien
    Effect of an interlayer on the emission characteristics of a white-light-emitting electroluminescent device with a Pr and Ce doubly doped ZnS phosphor layer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8717-8724 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have investigated light-emission characteristics of a white-light-emitting electroluminescent device with a doubly doped ZnS:Pr,Ce,F phosphor layer. We found that optimum codoping of Ce enhances the emission characteristics compared to the electroluminescent device with a singly doped ZnS:Pr,F layer. We also found that introducing an additional thin-insulating SixNy interlayer between the lower insulating layer and the phosphor layer significantly stabilizes the aging characteristics and improves the luminous efficiency. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362498
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  • 4
    Digitale Medien
    Digitale Medien
    Electron-paramagnetic-resonance study of the Mn2+ luminescence center in ZnS:Mn powder and thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1004-1007 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The number of isolated Mn2+ ions and Mn2+ clusters in ZnS:Mn powder and thin films has been studied using Mn2+ spectra measured at room temperature with an X-band electron-paramagnetic-resonance spectrometer. While the concentration of the isolated Mn2+ ions decreases with increasing Mn concentration, the concentration of the clusters increases. At low Mn concentration, the Mn2+ ion substitutes for the Zn ion in ZnS:Mn in the cubic phase. At high Mn concentrations, where the ZnS powder has a dominant hexagonal phase, the Mn ion still prefers to substitute for Zn in ZnS:Mn at the cubic site rather than at the hexagonal site. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360886
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  • 5
    Digitale Medien
    Digitale Medien
    Decrease of the number of the isolated emission center Mn2+ in an aged ZnS:Mn electroluminescent device (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4253-4257 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We observed a decrease of the number of effective emission centers Mn2+ in the aged ZnS:Mn electroluminescence (EL) devices compared to the fresh EL devices using the electron-paramagnetic-resonance technique. Such phenomena can take place during the operation of the EL device, since the isolated Mn can easily diffuse into another site and forming cluster. Another possible explanation is that Mn2+ changes into Mn1+ or Mn3+ by transferring the electronic charge of the isolated Mn2+ to the neighboring Mn ions via sulfur and/or sulfur vacancy. As a result, luminance is lowered due to the decrease in the number of efficient emission centers of isolated Mn2+. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359887
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  • 6
    Digitale Medien
    Digitale Medien
    Light-emission phenomena from porous silicon: Siloxene compounds and quantum size effect (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8060-8065 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It has long been argued whether the luminescent mechanism of anodized porous silicon is mainly due to the chemical compounds such as siloxene derivatives, or the quantum size effect. We performed a comprehensive study using atomic force microscope, infrared transmission, Raman scattering, and photoluminescence measurements in terms of various annealing temperatures. Low - temperature photoluminescence spectra have also been observed. This leads us to conclude that not only the siloxene derivatives but also the quantum size effect gives the luminescence in porous silicon. The previous pseudopotential calculations are used for the explanation of our experimental results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356547
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  • 7
    Digitale Medien
    Digitale Medien
    Measurement of Young's moduli for film and substrate by the mechanical resonance method : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5913-5915 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Young's moduli for films and substrates are obtained by measurement and theoretical analysis of the resonance frequencies for cantilevered substrates with and without films in the flexural vibration mode. Young's moduli of 7.1, 19.2, and 21.3×1010 Pa obtained for the glass substrate, Ni, and Ni53Fe47 films agree with the published values for bulk material within 10%. Decrease of the resonance curve Q value is observed for substrates with films, which implies an increase of internal friction.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355510
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  • 8
    Digitale Medien
    Digitale Medien
    Experimental method for preparing nanometer scale Pd probe (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3022-3023 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Two-step electrochemical etching is used to fabricate a palladium microprobe having a tip diameter less than 20 nm. The first etching is done at 4–7 V in a solution containing 4:6 volume ratio of HCl:HNO3, while in the second the etching, low voltage pulses are used.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1144352
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  • 9
    Digitale Medien
    Digitale Medien
    The negative differential resistance behavior in delta-doped GaAs structure due to resonant interband tunneling (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 780-782 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A GaAs delta-doped tunneling diode having a δn+-i-δp+-i-δn+ structure is investigated. A negative differential resistance behavior with peak-to-valley ratio as high as 3.1 and a peak current density of 3 kA/cm2 is exhibited when the device is operated at room temperature. It becomes resistor-like at the temperature of 77 K. Theoretical analysis, based on envelope wave function approximation, indicates that the resonant interband tunneling process is responsible for room-temperature characteristics, while the band-gap widening effect is responsible for low-temperature behavior. Furthermore, the dependence of device performance on such structure parameters as doping level, and the physical dimension of the delta-doped region, etc., is discussed, and found to agree well with experimental results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351343
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  • 10
    Digitale Medien
    Digitale Medien
    Chemical sputtering of Al2O3 by fluorine-containing plasmas excited by electron cyclotron resonance (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5329-5336 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Reactive ion etching of aluminum oxide has been studied in CHF3 and SF6 plasmas generated by electron cyclotron resonance in conjunction with in situ ellipsometric measurement for thickness variation. Because of the involatility of etch products associated with aluminum, purely chemical reactions cannot desorb etch products at room temperatures, and ion bombardment is essential to etch Al2O3 through chemically enhanced physical sputtering. The higher the oxygen content in a film, the faster the etch rate, resulting from chemical sputtering due to volatile CO molecules in CHF3 plasmas. This dependence on composition is absent in SF6 plasma. The threshold ion energy for physi-chemical sputtering by fluorine-containing species is estimated to be about 20 eV at room temperature, while the threshold for Ar sputtering is 50 eV. In CHF3 plasmas, however, Al2O3 exhibits a larger threshold energy at a lower temperature due to passivating species which inhibit sputtering. These passivating species have a very weak binding energy of roughly 0.1 eV, which has been deduced from a temperature dependence of the threshold energy. A patterned sample always shows vertical profile without undercuts.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347027
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