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  • 1
    Electronic Resource
    Electronic Resource
    Raman scattering of SiC: Application to the identification of heteroepitaxy of SiC polytypes (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1134-1136 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of 3C- and 6H-silicon carbide (SiC) was investigated using Raman scattering. It was found that 3C-SiC(111) can be epitaxially grown on 6H-SiC(0001) by chemical vapor deposition, and that Raman spectra are useful for identification of heterostructure of thin layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338157
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  • 2
    Electronic Resource
    Electronic Resource
    Schottky-barrier field-effect transistors of 3C-SiC (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2989-2991 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky-barrier field-effect transistors have been fabricated first from 3C-type SiC. Al-doped p-type and nondoped n-type 3C-SiC epilayers were successively grown on p-type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky-barrier gate contacts and ohmic (source and drain) contacts for n-type SiC. Transistor operation was observed for the first time for the field-effect transistors of 3C-SiC.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337751
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  • 3
    Electronic Resource
    Electronic Resource
    Critical current density of high-quality Bi2Sr2Ca2Cu3Ox thin films prepared by metalorganic chemical-vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2951-2957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Critical current densities Jc were measured in as-deposited, c-axis-oriented Bi2Sr2Ca2Cu3Ox thin films with Tc values as high as 97 K, which were prepared by metalorganic chemical-vapor deposition. These films showed high Jc ((approximately-greater-than)109 A/m2) at 77.3 K in high magnetic fields (≥1 T, H(parallel)a-b plane). The best values are 3.3×109 A/m2 at 1 T and 9.1×108 A/m2 at 8 T, which are the highest Jc for Bi-oxide thin films among those reported so far. There were no signs of weak links in the Jc(H) behavior, and the surface morphology examined by scanning electron microscopy showed no apparent grain boundaries. The values of Jc decreased sharply when the applied field deviated from the a-b plane, and went to zero at the angles where the field component in the c direction is nearly equal to the irreversibility field Hc2* parallel to the c axis. The angular dependence of Jc of these films is most reasonably explained by the theory of intrinsic pinning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351499
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  • 4
    Electronic Resource
    Electronic Resource
    New machining method for making precise and very smooth mirror surfaces made from Cu and Al alloys for synchrotron radiation optics : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2120-2123 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A combined machining method of diamond turning and numerically controlled elastic emission machining has been developed for finishing metal mirror surfaces made from Cu and Al alloys. A mirror surface can be polished without any stress by this method. Shape and roughness of the mirror surface examined in different machining methods are compared and discussed. A precisely shaped mirror with a roughness less than 2-nm Rmax was obtained. A copper mirror was installed in a VUV beamline of the Photon Factory. It is confirmed that the metal mirror finished by the present method has good optical characteristics for synchrotron radiation beamlines.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140841
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  • 5
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of SiC polytypes (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 303-305 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of SiC polytypes, 3C- and 6H-SiC, has been studied by chemical vapor deposition. Raman spectra were used to identify the polytypes. 3C-SiC and 6H-SiC were grown on 6H-SiC at low (1330–1500 °C) and high temperatures (1700–1800 °C), respectively. On the other hand, on 3C-SiC, only 3C-SiC was grown at all the temperatures. 3C-SiC epilayers grown at high temperatures have smooth surfaces and good electrical properties compared with those grown at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339147
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  • 6
    Electronic Resource
    Electronic Resource
    Raman scattering of SiC: Estimation of the internal stress in 3C-SiC on Si (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 254-257 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Internal stress in 3C-silicon carbide (SiC) epilayers grown on Si substrates by chemical vapor deposition was studied using Raman scattering. The stress in the epilayers grown on Si(001) at 1350 °C was found to be 5.4×109 dyn/cm2 tensile, which is comparable to that of silicon on sapphire. The magnitude of the stress is discussed in terms of the elastic deformation theory. It was found that there is not so much difference between the stress in 3C-SiC epilayers grown on Si(001) and that in 3C-SiC on Si(111) as the elastic deformation theory suggests.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339191
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  • 7
    Electronic Resource
    Electronic Resource
    Operation of Schottky-barrier field-effect transistors of 3C-SiC up to 400 °C (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2106-2108 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky-barrier field-effect transistors have been fabricated from 3C-SiC and transistor operation has been studied at temperatures up to 400 °C. B-doped high-resistivity and undoped n-type 3C-SiC epilayers were successively grown on p-type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky-barrier gate contacts and source and drain contacts for n-type 3C-SiC, respectively. Transconductances of 1.7 and 0.15 mS/mm were obtained at room temperature and 400 °C, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99010
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of stripe-direction dependence of threshold current density for AlGaInP laser diodes with CuPt-type natural superlattice in Ga0.5In0.5P active layer (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 737-739 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anisotropy for threshold current densities for AlGaInP laser diodes with CuPt-type natural superlattice (NSL) in a Ga0.5In0.5P active layer, grown on a (001) GaAs substrate, was observed, for the first time. Threshold current densities (Jth) for laser diodes with stripes in the [1¯10] and [110] direction were 1.35 and 2.10 kA/cm2, respectively. The lasers with a weak NSL formation in the active layer showed a very small anisotropy in Jth. Stripe direction dependence of electroluminescence (EL) polarization properties were also observed for lasers with well-developed NSL. The anisotropies in Jth and EL polarization properties are attributed to the existence of the NSL in the active layer and the appearance asymmetry previously observed in the NSL.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107782
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  • 9
    Electronic Resource
    Electronic Resource
    Clinical longevity of resin-bonded bridges bonded using a vinyl-thiol primer (2003)
    Oxford, UK : Blackwell Science Ltd
    Journal of oral rehabilitation 30 (2003), S. 0 
    Details
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: summary  The purpose of this study is to clinically confirm the adhesive effect of a vinyl-thiol primer (V-Primer) for precious alloys. Further, we examined the failure of resin-bonded bridges (RBBs) in order to improve the clinical longevity of RBBs, and to analyse the causes of failure. Twenty-six RBBs were bonded with V-primer and Super Bond C & B between May 1987 and December 1997 in the Dental Clinic of the Health Sciences University of Hokkaido. The RBBs were made of silver–palladium–gold alloy or metal–ceramic gold alloys. V-primer was effective in bonding Super Bond C & B to the RBBs made of silver–palladium–gold alloys. Ten prostheses had functioned satisfactorily for 8–11 years. However, six of the 26 RBBs had become detached. In four of the six failed RBBs, the type of bond failure was a mixture fracture in the resin–enamel interface. Our results suggest that: (1) V-primer is effective on RBBs made of silver–palladium–gold alloys. (2) Mechanical retention is necessary for retainers to improve the longevity of RBBs when the V-primer is applied to RBBs made of precious alloys without copper. (3) The RBB should not be applied to abutment teeth that have differences in tooth mobility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2842.2003.01166.x
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  • 10
    Electronic Resource
    Electronic Resource
    Suppressive effect of tetraprenylacetone on gastric atrophy induced by short-term administration of N-methyl-N′-nitro- N-nitrosoguanidine in rats (1997)
    Oxford UK : Blackwell Science Ltd.
    Alimentary pharmacology & therapeutics 11 (1997), S. 0 
    Details
    ISSN: 1365-2036
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Several studies have been reported on the effects of various therapeutic agents in enhancing or suppressing the carcinogenic activity of N-methyl-N′-nitro-N-nitrosoguanidine (MNNG). However, it is still unknown whether a mucosal protective agent could suppress its carcinogenic activity.〈section xml:id="abs1-2"〉〈title type="main"〉Methods:Twenty-five Wistar male rats were divided into four groups: group 1, MNNG alone; group 2, MNNG + tetraprenylacetone; group 3, control; group 4, tetraprenylacetone alone. MNNG 100 mg/mL was freely given to groups 1 and 2, and tetraprenylacetone (200 mg/kg intraperitoneal) was additionally administered every other day to the rats in groups 2 and 4. The animals were sacrificed at 10 weeks and the gastric mucosa examined.〈section xml:id="abs1-3"〉〈title type="main"〉Results:Atrophic changes were observed in the antrum after 8 weeks of oral administration of MNNG. Furthermore, using immunohistological analysis with 5-bromo-2′-deoxyuridine (BrdU), the proliferative zone was found to be enlarged and shifted upward, although the BrdU labelling index of the proliferative zone was unaltered. Intraperitoneal administration of tetraprenylacetone every other day suppressed the MNNG-induced atrophic change and the alterations proliferative markers. Tetraprenylacetone alone did not have an effect either on morphological or proliferative markers.〈section xml:id="abs1-4"〉〈title type="main"〉Conclusion:These observations suggest that gastric mucosal defensive factors may play critical roles in suppressing atrophic change inducing carcinogenesis by an exogenic carcinogen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2036.1997.00162.x
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