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  • 1
    Digitale Medien
    Digitale Medien
    Paramagnetic molecular center in natural sodalite (1984)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 3494-3496 
    Details
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/j150660a024
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  • 2
    Digitale Medien
    Digitale Medien
    Strain effects on As and Sb segregates immersed in annealed GaAs and GaSb by Raman spectroscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3631-3633 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Raman scattering was used to obtain information about residual strains on As and Sb segregates immersed in GaAs and GaSb annealed at high temperatures. Eg and A1g modes of As and Sb in annealed GaAs and GaSb Raman spectra showed that the segregates are in the crystalline phase. Tensile stresses on As segregates were evident, while the Sb segregates were found to be practically relaxed. The temperature dependence of the stresses on segregates were determined. The different annealing temperatures used in this work were found to not cause substantial changes in stresses on segregates. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1355697
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  • 3
    Digitale Medien
    Digitale Medien
    Raman characterization of structural disorder and residual strains in micromachined GaAs (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1280-1283 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Structural disorder and strain effects in ductile-regime single-point-diamond-turned gallium arsenide monocrystalline samples were probed by Raman scattering. The positive frequency shift of the longitudinal and transverse optical phonons observed in the machined samples indicate a residual compressive stress of about 1.5 GPa. This residual strain was attributed to the hysteresis of phase transformation generated by the high pressure imposed by the cutting tool tip during the machining process. The broadening of the Raman peaks indicate a high degree of structural disorder in the GaAs lattice. Moreover, the Raman spectrum of annealed samples, after machining, shows a less disordered but still misoriented matrix. In addition, it was found that crystalline arsenic formed into the surface vicinity. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.372009
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  • 4
    Digitale Medien
    Digitale Medien
    Erratum: Raman scattering study of [hhk]-GaAs/[Si or CaF(2)] strained heterostructures [J. Appl. Phys. 76, 2773 (1994)] (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2849-2849 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359612
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  • 5
    Digitale Medien
    Digitale Medien
    Raman scattering study of [hhk]-GaAs/(Si or CaF2) strained heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2773-2780 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Raman spectroscopy is used to measure the frequency shift, symmetry, and activity of long-wavelength optical phonons in several GaAs strained epilayers. The results are compared with theoretical evaluations using the elastic compliances, phonon deformation potentials, and Raman tensors. The effect of growth direction ([001], [111], and [112]) and the substrate nature (Si or CaF2) is analyzed. The importance of nonstandard growth directions, [111] or [112], on residual stress and piezoelectric effect is discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357542
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  • 6
    Digitale Medien
    Digitale Medien
    Strain relaxation in [001]- and [111]-GaAs/CaF2 analyzed by Raman spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1126-1132 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Study is devoted to a complete characterization of GaAs/CaSrF2/CaF2 heterostructures. Due to the transparency of CaF2 substrate to visible light, Raman spectra have been obtained at both interface and surface sides of the 2 μm GaAs layer. Moreover, penetration depth of light varying with wavelength allows one to perform a tomography of this layer. The crystalline quality at the vicinity of the surface is analyzed through Raman selection rules for both [001] and [111] growth directions. In the latter case, a stress profile has been realized in order to determine its relaxation into the GaAs layer: It occurs in the first 40 nm from the interface. Finally, this methodology is applied to optimize growth conditions in order to obtain stable highly strained systems. By comparison with photoluminescence data, the Raman probe is shown to be very efficient for this purpose. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358975
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  • 7
    Digitale Medien
    Digitale Medien
    Short-range disorder in lanthanum-doped lead titanate ceramics probed by Raman scattering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 897-899 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Raman scattering has been used to probe short-range structural information on lanthanum-doped lead titanate ceramics (LaxPb1−xTiO3) for x, ranging from 0.0 to 0.30. In highly doped samples (x〉0.27), x-ray diffraction measurements indicate a cubic structure, although measurements of Raman scattering at temperatures above and below the tetragonal to cubic transition showed a residual short-range structural disorder in the cubic phase. Moreover, for these highly lanthanum-doped samples, a well-defined temperature-induced ferro–paraelectric phase transition disappears, which suggests a relationship between local disorder and relaxor behavior in this material. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120929
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  • 8
    Digitale Medien
    Digitale Medien
    Raman probing of thermal damage depth profile in annealed GaAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6588-6591 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Raman scattering has been used to get information on the depth profile of both lattice damage and solid arsenic formation in gallium arsenide annealed at different temperatures. Measurements of Raman peak intensity ratio of GaAs transverse to longitudinal optical phonons as a function of exciting wavelength with a different penetration depth of the light gave information on the depth profile of the chemical and structural disorder in the gallium arsenide lattice. Moreover, measurements of the arsenic A1g and Eg phonon mode frequencies as a function of temperature showed that the arsenic formed in the vicinity of the surface is crystalline and submitted to very high temperature-dependent tensile stresses, with values ranging from 1.5 GPa at 300 K until 2.8 GPa at 10 K. On the other hand, the analysis of selection rules, phonon frequency, and linewidth indicates a strain-free and misoriented GaAs matrix. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.369031
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  • 9
    Digitale Medien
    Digitale Medien
    High strain effects evidenced by Raman scattering in arsenic clusters in As-implanted GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1927-1929 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Raman scattering has been used to track structural information on arsenic clusters in GaAs obtained by annealing of high dose As-implanted GaAs layers. Beyond the good crystalline quality of both the clusters and the matrix, high tensile stresses within the precipitates have been originally deduced from the A1g and Eg mode frequency shifts. The results are well explained in terms of the difference between the thermal expansion coefficients of the two materials. The temperature dependence of the stresses corroborates this interpretation. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.113279
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  • 10
    Digitale Medien
    Digitale Medien
    Alloying effects on the critical layer thickness in InxGa1−xAs/InP heterostructures analyzed by Raman scattering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 436-438 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Raman scattering has been used to estimate the critical layer thickness and to analyze the alloying effect on strain relaxation in InxGa1−xAs layers grown by molecular beam epitaxy on InP [001]-oriented substrate, for x ranging from 0.0 to 1.0. Measurements of longitudinal optical GaAs-like phonon frequency and Raman linewidth showed that the indium/gallium ratio contents greatly influences the strain relaxation. A comparison between Raman and x-ray diffraction measurements of relaxation ratios as a function of layer thickness is presented. The results can be explained in terms of the combined effect of strain and chemical and structural disorder. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120800
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