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  • 11
    Electronic Resource
    Electronic Resource
    Photoluminescence of disordered ABO3 perovskites (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 824-826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense photoluminescence in highly disordered (amorphous) BaTiO3, PbTiO3, and SrTiO3 prepared by the polymeric precursor method was observed at room temperature. The emission band maxima from the three materials are in the visible region and depend on the exciting wavelength. The origin of the photoluminescence was not exactly identified. However, the line shape indicates that confinement effects are not probable. The experimental results indicate that it could be related to the disordered perovskite structure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1306663
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  • 12
    Electronic Resource
    Electronic Resource
    Raman probing of thermal damage depth profile in annealed GaAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6588-6591 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering has been used to get information on the depth profile of both lattice damage and solid arsenic formation in gallium arsenide annealed at different temperatures. Measurements of Raman peak intensity ratio of GaAs transverse to longitudinal optical phonons as a function of exciting wavelength with a different penetration depth of the light gave information on the depth profile of the chemical and structural disorder in the gallium arsenide lattice. Moreover, measurements of the arsenic A1g and Eg phonon mode frequencies as a function of temperature showed that the arsenic formed in the vicinity of the surface is crystalline and submitted to very high temperature-dependent tensile stresses, with values ranging from 1.5 GPa at 300 K until 2.8 GPa at 10 K. On the other hand, the analysis of selection rules, phonon frequency, and linewidth indicates a strain-free and misoriented GaAs matrix. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369031
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  • 13
    Electronic Resource
    Electronic Resource
    High strain effects evidenced by Raman scattering in arsenic clusters in As-implanted GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1927-1929 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering has been used to track structural information on arsenic clusters in GaAs obtained by annealing of high dose As-implanted GaAs layers. Beyond the good crystalline quality of both the clusters and the matrix, high tensile stresses within the precipitates have been originally deduced from the A1g and Eg mode frequency shifts. The results are well explained in terms of the difference between the thermal expansion coefficients of the two materials. The temperature dependence of the stresses corroborates this interpretation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113279
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  • 14
    Electronic Resource
    Electronic Resource
    Ductile and brittle modes in single-point-diamond-turning of silicon probed by Raman scattering (1999)
    Springer
    Journal of materials science 18 (1999), S. 1185-1187 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006694310171
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