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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8231-8233 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sheet resistances of ZnSe epitaxial layers etched by reactive ion etching (RIE) with use of a gas mixture of ethane and hydrogen were measured. The results showed that a high resistivity region was introduced by RIE. Characterization was done by transforming the measured resistances to the electrically active thickness estimated from the resistivity of as-grown ZnSe layers. The estimated electrically active thicknesses were smaller than the thickness of ZnSe epitaxial layers remaining after RIE, for both p- and n-ZnSe. The influence of heat treatment and current injection on the high resistivity regions differed between p- and n-ZnSe.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1158-1165 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of polar direction of GaN film on growth conditions has been investigated by changing either the group-V/group-III ratio (V/III ratio) in supplying the source gas or the deposition rate. GaN films were deposited on a nitrided sapphire by two-step metalorganic chemical vapor deposition. The surface morphology changed from flat hexagonal to pyramidal hexagonal facet with the increase of V/III ratio. However, the polar direction of GaN on an optimized buffer layer of 20 nm thickness was N-face (−c) polarity, independent of both the V/III ratio and the deposition rate. The polarity of the GaN epitaxtial layer can be determined by that of an interface (nitrided sapphire, annealed buffer layer or GaN substrate) at the deposition of GaN epitaxial layer. The higher V/III ratio enhanced the nucleation density, and reduced the size of hexagonal facets. The nuclei, forming the favorable hexagonal facets of wurtzite GaN, should grow laterally along the {101¯0} directions to cover a room among the facets until coalescence. After coalescence, −c GaN growth on a flat hexagonal facet results in a pyramidal hexagonal facet. The growth mode for −c GaN has been discussed with respect to surface structure and migration length of adsorbing precursors, in comparison with Ga-face (+c) GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5766-5768 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of the M-mica intercalation compounds (M=Mn,Fe,Co, and Ni) in which M elements form a two-dimensional lattice between mica layers have been investigated. The content of the intercalated M element, x, was varied up to about 22 wt. %, which is about 81% with respect to the upper limit of x. The ac susceptibility measurements revealed the magnetic ordering around 10 K for the Fe- (x≥8.0 wt. %), Co- (x≥7.4 wt. %), and Ni-mica intercalation compounds, but did not for the Mn-mica. These magnetic orders are considered to be the two-dimensional ones, caused from the intralayer superexchange interaction between M2+ (and Fe3+) ions.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4532-4539 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stable compounds in microwave plasmas of various source gases for vapor-phase diamond growth have been measured by using in situ Fourier transform infrared spectroscopy. Each gas mixture of CH4+H2, C2H2+H2, C2H4+H2, CH3OH+H2, C2H5OH+H2, CO+H2, CCl4+H2, and CH4+O2+H2 was introduced into the plasma discharge region as a source gas. The detected carbonaceous compounds were CH4, C2H2, C2H4, and CO, and no other carbonaceous compounds were observed. CH4 and C2H2 were observed in plasmas of all source gases, whereas C2H4 was detected only at higher concentrations of carbonaceous compounds in source gases. CO was produced from source molecules containing oxygen atoms. The source molecules of CH3OH, C2H5OH, and CCl4 disappeared in the microwave plasma. Concentrations of products in the plasmas of CH4+H2, C2H2+H2, and C2H4+H2 were very similar. This result suggests that an equilibrium among CH4, C2H2, C2H4, H2, H, electrons, and various radicals is kept in the hydrogen excess plasma. Moreover, it was found that the addition of O2 to the CH4+H2 plasma reduced the concentrations of CH4 and C2H2 in the plasma.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2361-2365 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP crystals were etched by reactive ion etching (RIE) with gas mixture of ethane and hydrogen (C2H6/H2), and etching damages were characterized by photoluminescence (PL) measurements of near-edge and defect-related emissions. Near-edge PL emission intensities after RIE were equal to or larger than those before RIE, except for the samples etched for 50 min. The damage introduced by RIE was restricted to the very-near-surface region which can be removed by HF treatment. The peak energy of defect-related 1.1-eV deep emission bands shifted toward the lower-energy side for the crystals with etching damages at the surface. The peak shift is attributable to the increase of defect complexes such as P-vacancy–P-interstitial or P-vacancy–In-vacancy.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2098-2100 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the dependence of impurity incorporation on the polar direction of GaN growth by using secondary ion mass spectroscopy (SIMS). GaN films were deposited under conditions used for growing device-quality materials on sapphire substrates while controlling their polar direction. It was found that the polarity of the GaN film influences the incorporation of impurities. SIMS analysis has revealed that the impurities related to carbon, oxygen, and aluminum are more readily incorporated into N-face GaN films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 674-676 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nondestructive determination of the polarity of GaN has been achieved by the use of coaxial impact-collision ion scattering spectroscopy analysis. The polarity of a GaN film with a smooth surface on non-nitrided c-plane sapphire was identified (0001) (Ga face; +c). GaN films with a 20 nm buffer layer on nitrided sapphire had (0001¯) (N face; −c) polarity and a hexagonal faceted surface. The influence of both the buffer layer and of substrate nitridation on the polarity of wurtzite {0001} GaN films deposited by two-step metal organic chemical vapor deposition (MOCVD) has been investigated. The polarity of the buffer layer on a nitrided sapphire substrate was altered by varying its thickness or the annealing time. It was found that the polarity of the GaN film is determined by the polarity of the annealed buffer layer; MOCVD-GaN films on buffer layers with +c and −c polarity have either +c (smooth surface) or −c (hexagonal facet) polarity, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3025-3026 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epitaxial layers grown by gas source molecular beam epitaxy were etched by reactive ion etching (RIE) with a gas mixture of ethane and hydrogen (C2H6/H2). Smooth etching surfaces were obtained under the following RIE conditions: an ethane concentration (flow fraction) of 3%, total flow (C2H6+H2) of 55 sccm, total pressure of 15 Pa and radio frequency power density of 0.6 W/cm2. This ethane concentration is smaller than that in III–V semiconductors, 5%–7%. The etching rate of ZnSe was 21 nm/min and smaller than that of III–V semiconductors.
    Type of Medium: Electronic Resource
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  • 19
    ISSN: 0014-4827
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Experimental Cell Research 209 (1993), S. 357-366 
    ISSN: 0014-4827
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
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