Bibliothek

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
  • 11
    Digitale Medien
    Digitale Medien
    Optical and structural properties of epitaxially lifted-off GaAs films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 466-468 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The influence of the layer thickness on the optical and structural properties of the epitaxially lifted-off (ELO) thin films has been studied. The ELO films bonded to Si, InP, and GaAs substrates have also been compared. The structure was characterized by high-resolution double-crystal x-ray diffraction and the optical properties were measured by the temperature-dependent photoluminescence spectroscopy. A biaxial compressive strain was observed for the samples bonded to Si with a buffer layer thinner than 1000 nm. Due to different thermal expansion coefficient between the grafted thin film and the host substrate, the emission spectra of the quantum wells of the lifted-off thin films are redshifted compared to the as-grown sample. The amount of the redshift is larger for thinner films. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.366662
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 12
    Digitale Medien
    Digitale Medien
    Doping effect on normal incident InGaAs/GaAs long-wavelength quantum well infrared photodetectors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2680-2683 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: 8–12 μm InGaAs/GaAs quantum well infrared photodetectors with two different well doping concentrations have been studied. The devices with and without surface gratings are compared for normal incident operation. It is found that the TE to TM absorption ratio depends on the doping density in the quantum wells. A higher doping density increases TE absorption. A detectivity about 1×1010 cm Hz1/2/W and a peak responsivity of 0.23 A/W at 9 μm have been obtained for the grating-free devices. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.366084
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 13
    Digitale Medien
    Digitale Medien
    Ground state properties of a high-spin Mn12O12 molecule in an organic compound : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7100-7102 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electronic structure and the magnetism of a Mn12O12 molecule at ground state have been studied by density functional theory with a local spin density approximation. We have found that the magnetic moments of Mn ions in the tetrahedron and those of Mn ions in the crown of the Mn12O12 molecule align antiferromagnetically. The average moment per Mn ion is about 3.07μB in the tetrahedron and 4.07μB in the crown. The total spin amounts to 20.0μB which is in agreement with recent experimental results. The significant difference of magnetic moments between Mn ions at two sites is attributed to the different exchange splitting of 3d orbitals. However, the charge difference between the two kinds of Mn ions is as small as 0.22 electrons. The charge density and the spin density exhibit strong directional dependence, which indicates the strong anisotropy in this molecule. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.367750
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 14
    Digitale Medien
    Digitale Medien
    GaAs traveling-wave polarization electro-optic waveguide modulator with bandwidth in excess of 20 GHz at 1.3 μm (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 83-85 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report a 1.3-μm GaAs traveling-wave electro-optic waveguide modulator with a 3-dB optical bandwidth in excess of 20 GHz. The bandwidth was determined by directly detecting the modulated optical signal with a high-speed InP/GaInAs photodiode. The modulator has a coplanar strip electrode configuration with a double heterojunction Al0.032Ga0.968As/GaAs/Al0.032Ga0.968As optical guide grown by low-pressure organometallic vapor phase epitaxy.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98982
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 15
    Digitale Medien
    Digitale Medien
    Radiation chemistry of nucleic acids. Isolation and characterization of glycols of 1-carbamylimidazolidone as products of cytosine (1973)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 95 (1973), S. 2711-2711 
    Details
    ISSN: 1520-5126
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ja00789a064
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 16
    Digitale Medien
    Digitale Medien
    Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1023-1025 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Low dark current InAs/GaAs quantum-dot infrared photodetectors (QDIPs) are demonstrated. The dark current is reduced by over three orders of magnitude by using a thin AlGaAs current blocking layer. This thin AlGaAs layer reduces the dark current much more than the response signal. The responsivity at 0.5 V is 0.08 A/W with a peak detection wavelength at 6.5μm. The corresponding detectivity is 2.5×109 cm Hz1/2/W1/2, which is the highest detectivity reported for a QDIP at 77 K. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1347006
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 17
    Digitale Medien
    Digitale Medien
    II–VI quantum confined Stark effect waveguide modulators (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 946-948 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Quantum confined Stark effect p-i-n waveguide modulators, grown on GaAs substrates by molecular beam epitaxy and using an undoped ZnSe/ZnCdSe multiquantum well structure as the guiding layer, have exhibited intensity modulation at wavelengths of 496 and 501 nm with extinction ratios of 6 and 4, respectively. These same devices have also demonstrated a transverse linear electro-optic effect observed as a superimposed secondary effect on the lateral intensity modulation at 514 nm in the form of phase modulation in the output of the same device. Intensity modulation has also been observed in quaternary laser waveguide structures, indicating that this is a device structure which is suitable for monolithic integration. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116107
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 18
    Digitale Medien
    Digitale Medien
    Nitrogen doping during atomic layer epitaxial growth of ZnSe (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3927-3929 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This letter reports the growth and characterization of ZnSe:N layers by atomic layer epitaxy (ALE) using a nitrogen rf-plasma source. The ALE-grown ZnSe:N layers have been investigated in terms of in situ reflection high electron energy diffraction and ex situ capacitance–voltage profiling and photoluminescence spectroscopy. The net acceptor concentration in the ALE-grown layer has been obtained as high as 1.2×1018 cm−3 and the ALE layers of ZnSe:N show reduced number of compensating deep centers compared with the ZnSe:N grown by molecular beam epitaxy. The effects of the Fermi level at a growing surface on the generation of compensating donors with a binding energy of 57 meV are also discussed. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114407
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 19
    Digitale Medien
    Digitale Medien
    Normal incident long-wavelength quantum well infrared photodetectors using electron intersubband transitions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 119-121 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Grating-free quantum well infrared photodetectors (QWIPs) for 8–10 μm applications have been fabricated. The QWIPs fabricated with InGaAs/GaAs quantum wells show excellent performance with normal-incident infrared radiation. A detectivity of 2×1010 cm Hz1/2/W and a responsivity of 0.23 A/W have been obtained for these devices. The devices were compared with QWIPs with 1D and 2D surface gratings. No significant improvement in responsivity is observed for devices with 1D gratings. Devices with 2D gratings have significantly higher peak responsivity but only in a very limited spectral range. The GaAs/AlGaAs QWIPs in the similar spectral range have also been fabricated and, however, shown much weaker TE absorption. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119446
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 20
    Digitale Medien
    Digitale Medien
    ZnSe-ZnCdSe quantum confined Stark effect modulators (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1715-1717 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report room temperature operation of a II-VI p-i-n quantum confined Stark effect modulator using a ZnSe-Zn0.8Cd0.2Se multiple quantum well structure within a ZdSe p-n junction. A n-type ZnSe layer was used as a novel contact to the p-type ZnSe. Results are given for photovoltage spectroscopy, absorption, and differential absorption as a function of the applied electric field.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109583
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...