ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
In this paper, we investigate the germanium behaviour during the low-temperature plasma-assisted oxidation of strained epitaxial Si1 - xGex (x = 0.1, 0.2) layers. For an oxidation temperature of 500°C and an oxide thickness between 80 and 200 Å, using Auger depth profiling, we find that the oxidation process leads to the formation of a pure SiO2 top layer and the rejection of Ge at the oxide/alloy interface. Taking into account in a suitable way the broadening effect affecting the Auger profiles, we show that a pure Ge layer is formed at the interface.
Additional Material:
4 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740230604
Permalink