ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Palladium films, 45 nm thick, evaporated on to Si(111) were irradiated to various doses with 78 keV Ar+ ions to promote silicide formation. Rutherford backscattering spectroscopy (RBS) shows that intermixing has occurred across the Pd/Si interface at room temperature. The mixing behaviour is increased with dose which coincides well with the theoretical model of cascade mixing. The absence of deep RBS tails for palladium and the small area of this for silicon spectra indicate that short-range mixing occurs. From the calculated damage profiles computed with TRIM code, the dominant diffusion species is found to be silicon atoms in the Pd/Si system. It is also found that the initial compound formed by Ar+ irradiation is Pd2Si which increases with dose. At a dose of 1×1016 Ar+ cm−2, a 48 nm thickness of Pd2Si was formed by ion-beam mixing at room temperature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00547445
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