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  • 11
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Mutation Research/Environmental Mutagenesis and Related Subjects 53 (1978), S. 76-77 
    ISSN: 0165-1161
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2017-2019 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemisorption of molecular hydrogen onto the Si (100) surface is shown to disrupt the epitaxial growth of silicon and silicon/germanium alloys grown by molecular beam epitaxy. It is only after the substrate temperature is raised above the hydrogen desorption temperature, or the deposition rate is lowered, that high quality single-crystal films can be grown. The results also suggest the surface segregation of hydrogen during growth.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Genetics 11 (1977), S. 183-201 
    ISSN: 0066-4197
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Genetics 1 (1967), S. 221-244 
    ISSN: 0066-4197
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Medicine 26 (1975), S. 277-281 
    ISSN: 0066-4219
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Medicine 27 (1976), S. 127-141 
    ISSN: 0066-4219
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 7689-7698 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a new relativistic formulation for the calculation of nuclear magnetic resonance (NMR) shielding tensors. The formulation makes use of gauge-including atomic orbitals and is based on density functional theory. The relativistic effects are included by making use of the zeroth-order regular approximation. This formulation has been implemented and the 199Hg NMR shifts of HgMe2, HgMeCN, Hg(CN)2, HgMeCl, HgMeBr, HgMeI, HgCl2, HgBr2, and HgI2 have been calculated using both experimental and optimized geometries. For experimental geometries, good qualitative agreement with experiment is obtained. Quantitatively, the calculated results deviate from experiment on average by 163 ppm, which is approximately 3% of the range of 199Hg NMR. The experimental effects of an electron donating solvent on the mercury shifts have been reproduced with calculations on HgCl2(NH3)2, HgBr2(NH3)2, and HgI2(NH3)2. In addition, it is shown that the mercury NMR shieldings are sensitive to geometry with changes for HgCl2 of approximately 50 ppm for each 0.01 Å change in bond length, and 100 ppm for each 10° change in bond angle. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 895-905 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A formulation for the calculation of nuclear magnetic resonance (NMR) shielding tensors, based on density functional theory (DFT), is presented. Scalar-relativistic and spin-orbit coupling effects are taken into account, and a Fermi-contact term is included in the NMR shielding tensor expression. Gauge-including atomic orbitals (GIAO) and a frozen-core approximation are used. This formulation has been implemented, and 1H and 13C NMR shifts of hydrogen and methyl halides have been calculated and show good agreement with experiment. 13C NMR shifts of 5d transition metal carbonyls have been calculated and show improved agreement with experiment over previous scalar-relativistic calculations. For the metal carbonyls it is shown explicitly that the combination of spin-orbit coupling and magnetic field mixes spin triplet states into the ground state, inducing a spin density that then interacts with the nuclei of the metal carbonyl via the Fermi-contact term. Results indicate that the Fermi-contact contribution to the 13C NMR of the metal carbonyl ions increases with increasing oxidation state of the ion. It is reasoned that as the oxidation state increases, π back bonding decreases and σ bonding increases, within the metal–carbon bond, thus facilitating a greater transfer of spin density from the metal to the carbon nucleus, and thus increasing the Fermi-contact contribution to the NMR shielding of the carbon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4025-4027 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The preparation conditions for the deposition of hydrogenated amorphous silicon-carbon alloys (a-SiC:H) from a glow-discharge plasma have been systematically scanned by changing the starting-gas materials as well as the starting gas to hydrogen dilution ratio. A highly photosensitive alloy showing a photoconductivity to dark conductivity ratio of 107 at a band gap of 2.0 eV was prepared under optimized conditions.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1626-1628 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen in undoped, unalloyed microcrystalline silicon (μc-Si:H) has been investigated with secondary-ion mass spectrometry (SIMS), Raman spectroscopy, infrared absorption spectroscopy, and nuclear magnetic resonance (NMR). The samples were grown by plasma-enhanced chemical vapor deposition with hydrogen to silane dilution ratios (H2:SiH4) ranging from 0:1 to 98:1. Microcrystallinity is obtained for dilution ratios of 20:1 and greater. The hydrogen concentration is shown to depend nonmonotonically on the degree of hydrogen dilution. The H concentration in the films decreases with dilution for ratios from 0:1 to 10:1 and then increases with greater dilution. This dependence on dilution is established with both NMR and SIMS and suggests the existence of competing processes in the incorporation of hydrogen during deposition. It is further observed that the formation of microcrystallites is accompanied by the appearance of both higher order silicon hydrides and large concentrations of unbound molecular hydrogen.
    Type of Medium: Electronic Resource
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