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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence spectra of deformed Si-Ge alloy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6991-6996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured photoluminescence (PL) spectra of deformed bulk Si-Ge alloys and found peculiar peak shifts of D1 and D2 lines depending on the deformation and annealing temperatures. Alloy crystals were grown by the Czochralski method. Specimens were deformed by compression at temperatures between 700 and 900 °C in an argon atmosphere. PL spectra were measured at 4.2 K. Peak positions of D1 and D2 lines depended on the deformation temperatures; they were at higher energies at higher deformation temperatures. On the other hand, those of D3 and D4 did not depend on the deformation temperature. The magnitudes of peak shifts of D1 and D2 lines were proportional to t2/3 at small t due to isothermal annealing ( t: the duration of annealing) at around 650 °C. The activation energy was determined to be 2.5 eV, which was much smaller than that of self-diffusion. These results were interpreted as being due to the change of alloy composition around dislocations caused by the elastic interaction between dislocations and constituent atoms, i.e., Si and Ge, in which process point defects generated during deformation were thought to play a crucial role. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363773
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of defects in self-ion implanted Si using positron annihilation spectroscopy and Rutherford backscattering spectroscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9017-9021 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of vacancy-type defects and displaced Si atoms in Si(100) caused by self-ion implantation has been investigated by variable-energy positron annihilation spectroscopy and Rutherford backscattering spectroscopy/channeling. It is found that the recovery process of the defects strongly depends on the morphology of the implanted region. The divacancies produced by an implantation of 2×1014Si+⋅cm−2, which is less than the critical value required for amorphization, aggregate into large vacancy clusters by annealing at 300 °C. These vacancy clusters diffuse towards the surface at temperatures above 600 °C and anneal out at around 800 °C. The specimen implanted with 2×1015Si+⋅cm−2, in which a complete amorphization takes place in the damaged region, shows a different annealing characteristic. In the first stage (∼600 °C), the amorphous zone is transformed into crystalline material by solid phase epitaxial growth, although large vacancy clusters still remain. These agglomerate clusters continue to grow in a second annealing stage which takes place at around 700 °C. Annealing at 900 °C is required to eliminate these vacancy-type defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362634
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of interlayer coupling in δ MnGa/(Ga,As,Mn)/δ MnGa trilayers : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5345-5347 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the temperature dependence of the interlayer coupling, from 15 to 300 K, in ferromagnet/semiconductor/ferromagnet trilayers with the nominal structure of 10 nm δMn60Ga40/GaAs (n monolayers)/20 nm δMn54Ga46 [n=6–16 monolayers (ML) nominally] grown on (001) GaAs substrates by molecular-beam epitaxy. Since compositional analysis showed a strong diffusion of Mn into the GaAs spacer layer, we represent the trilayer structure as MnGa/(Ga,As,Mn)/MnGa. The magnetic-circular-dichroism loops showed antiferromagnetic coupling between both MnGa layers for the samples with a spacer layer from 6 to 14 ML GaAs nominally in the whole temperature range. The temperature coefficient of the coupling field was found to be positive for 6–8 ML spacers and negative for 10–14 ML spacers. We interpret these facts as the competition between two (or more) coupling mechanisms. For the sample with a 16 ML GaAs spacer layer, the interlayer coupling was antiferromagnetic below 200 K, but ferromagnetic above 200 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364950
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  • 4
    Electronic Resource
    Electronic Resource
    Photocurrent spectroscopy of 5-nm-wide InGaAs/InAlAs quantum wells and quadratic dependence of optical transition energies on quantum numbers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5168-5170 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of optical transitions between higher conduction subbands and higher heavy-hole subbands have been observed between 77 K and room temperature in photocurrent spectra of p-i-n photodiodes including 5-nm-wide InGaAs/InAlAs multi-quantum wells. The quadratic dependence of the transition energy on the heavy-hole quantum number, l=1,2 and 3, has been clarified for each conduction-electron quantum number, n=1 and 2. This experiment evidences the applicability of a particle-in-a-box model to the energy level determination. The carrier effective masses in InGaAs wells and the related band discontinuities were analyzed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359750
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  • 5
    Electronic Resource
    Electronic Resource
    Photoelectric properties of Ag–As–S glasses (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3895-3901 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconductive and photovoltaic responses in glassy Ag–As–S ion-conducting semiconductors have been studied. The ac conductivity of the glass increases with illumination, while the increase is ascribed to enhanced ionic conduction caused by temperature rise and to interfacial photoeffects. Bulk photocurrent is not detected. By contrast, photovoltages appear in Ag–As–S samples having sandwich and floating electrodes. The photovoltaic characteristics are discussed in terms of classical electrodynamics assuming interaction between electronic carriers and Ag+ ions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359906
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  • 6
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of Ag-As-S glasses (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1034-1039 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Physical properties of Ag2S-As2S3 glassy alloys have been studied as a function of the Ag atomic concentration x. With an increase in x, the optical-absorption edge exhibits a red shift, while the steepness of the Urbach tail changes little. In the glasses with x≥15, the electrical conductivity is governed by Ag+ ionic conduction. The ionic conductivity exponentially increases with x, and in contrast the hole conductivity hardly changes with x; however, the activation energies for the ionic and the hole conductivity are nearly the same at about 0.4 eV for compositions with 15 ≤x≤35. These observations are discussed on the basis of atomic and electronic structures in Ag2S-As2S3 glasses. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359581
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  • 7
    Electronic Resource
    Electronic Resource
    Role of the Major Histocompatibility Complex Class I Antigens in Tumor Growth and Metastasis (1988)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Immunology 6 (1988), S. 359-380 
    Details
    ISSN: 0732-0582
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.iy.06.040188.002043
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  • 8
    Electronic Resource
    Electronic Resource
    Continuous Three-Dimensional Examination of Interior Hair Structure (2005)
    Oxford, UK : Blackwell Science Ltd
    International journal of cosmetic science 27 (2005), S. 0 
    Details
    ISSN: 1468-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The ability to continuously examine the interior hair structure throughout a treatment process is very important in designing effective hair products. Microscopy is commonly used to observe the interior of hair, but this method requires a sliced sample, making continuous observation impossible. Use of X-ray computed tomography (CT) as a non-destructive measurement has been proposed, but this method has a disadvantage in that it is impossible to obtain full-color interior images of the sample. Thus, a non-destructive method for continuous, full-color examination of the interior hair structure has been lacking. In this study a new method is proposed that enables non-destructive and continuous measurement of the interior hair structure with color information. In our method, optical CT is used for reconstruction of the interior hair structure. Our new theories enabled us to solve the crucial problem of the large observational error of traditional optical CT systems caused by internal light scattering and to make its practical application possible. A new optical CT system based on our method was implemented. This system displayed sufficient accuracy when the phantom image was measured, and clear and full-color cross-sectional images were obtained without destruction of the sample when human hair was observed. When the bleaching and dyeing processes were continuously measured, changes in the interior hair with time could be observed. These results clearly indicate that our new method provides a powerful tool for research and product development.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1463-1318.2005.00268_1.x
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  • 9
    Electronic Resource
    Electronic Resource
    Properties of hydrogenated amorphous germanium nitrogen alloys prepared by reactive sputtering (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1074-1082 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous germanium-nitrogen alloys (a-GeNx:H) were synthesized as a new group of amorphous semiconductors by rf(13.56 MHz) reactive sputtering of a Ge target in a gas mixture of Ar+N2+H2 under a variety of deposition conditions such as gas ratio, rf-discharge power, and substrate temperature. Structural, optical, and electrical properties of those a-GeNx:H alloys were systematically measured and are discussed in relation to their preparation conditions. The optical band gap E04 of a-GeNx:H alloys could be continuously controlled in the range from 1.1 eV to 3.3 eV primarily depending on the atomic N/Ge ratio in the film. The role of hydrogen and nitrogen in the optical and electrical properties of the material is also crucially demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343042
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  • 10
    Electronic Resource
    Electronic Resource
    Fe-doped semi-insulating InP grown by chloride vapor-phase epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4698-4700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-doped semi-insulating (SI) InP layers have been grown using chloride vapor-phase epitaxy for the first time. Fe-doping was carried out by introducing FeCl2 to the growth region, bypassing the source region. The FeCl2 was formed by etching a pure metallic Fe source by HCl vapor. The resistivity of the SI-InP epitaxial layers was evaluated by measuring current-voltage characteristics, and a high value of 4×108 Ω cm was obtained. The semi-insulating current blocking was maintained up to an applied voltage of nearly 30 V, even at 110 °C, with a layer 4.3 μm thick.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338385
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