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  • 1
    Electronic Resource
    Electronic Resource
    Conformally-invariant scalar field with trace-free energy-momentum tensor in Robertson-Walker models (1992)
    Springer
    Astrophysics and space science 188 (1992), S. 165-167 
    Details
    ISSN: 1572-946X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Exact solutions of Einstein's field equations for a conformally-invariant scalar field with trace-free energy-momentum tensor is presented for the Robertson-Walker models withK=+1, −1. The physical properties of the solution are also studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00642934
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  • 2
    Electronic Resource
    Electronic Resource
    B-D Field Interaction with the Gravitation Field in the Robertson-Walker Universe Filled With Perfect Fluid (1998)
    Springer
    Astrophysics and space science 260 (1998), S. 327-333 
    Details
    ISSN: 1572-946X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The study of Einstein field equations describing the Robertson-Walker universe with the Brans-Dicke field and perfect fluid has been made. It is found that the exact solutions to the B-D field interacting with perfect fluid reduce to a false vaccum with cosmological constant and without cosmological constant the solution reduce to the exact solution of the matter dust distribution in the Brans-Dicke cosmology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1001765007950
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  • 3
    Electronic Resource
    Electronic Resource
    Solid-state chemistry of new Tl2OCl2 and Tl4Cl6 (1983)
    Springer
    Journal of materials science 18 (1983), S. 3087-3091 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Solid thallous carbonate reacts with chlorine gas with the formation of brown-coloured Tl2OCl2 as an intermediate compound. Further exposure to chlorine gas gives the yellow compound Tl4Cl6. Both the compounds contain Tl(I) and Tl(III) ions. The kinetic data obeyw 2=kt. The energy of activation was found to be 41.98 kcal mol−1. Thermo-gravimetry (TG) indicates that Tl2OCl2 decomposes into TlCl, Tl2O3 and chlorine gas above 250° C. In contrast, Tl4Cl6 is stable up to 420° C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00700792
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of subgrain structures on the optical homogeneity of Tl3AsSe3 single crystals (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 827-830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies of subgrain structures in Tl3AsSe3 have been performed by x-ray topography. Birefringent interference patterns show that a direct correlation exists between the subgrain structures and the optical homogeneity of the crystals. A quantitative measurement of lattice misorientation was performed from the interference patterns and compared with x-ray rocking measurements. The origin of the subgrains is also discussed in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341932
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  • 5
    Electronic Resource
    Electronic Resource
    Thermal oxidation and electrical properties of silicon carbide metal-oxide-semiconductor structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1279-1283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fabrication processes of metal-oxide-semiconductor (MOS) capacitors on n-type, Si-face 6H-SiC, and its electrical properties, have been reported in this article. The effects of thermal oxidation conditions at temperatures between 1150 and 1250 °C on the electrical properties of MOS capacitors were studied. After oxidation, the wafers were annealed under argon ambient to improve the capacitance-voltage (C-V) characteristics. The C-V characteristics of the Al-SiO2-SiC metal-oxide-semiconductor capacitors were measured at high frequency in the dark and under illumination. Under dark conditions, inversion did not occur, probably owing to the absence of minority carriers due to the large band gap of 6H-SiC. The C-V measurements made under illumination for both wet and dry thermally grown oxides show accumulation, depletion, and inversion regions. The ac conductance method was used to determine the interface trap densities and emission time constants of fast states. From the analysis of the data a total of fixed charges and the slow interface traps, Not+NitSlow of 1.5–3.3×1012 cm−2, fast interface trap densities, NitFast of 0.5–1.7×1011 cm−2 eV−1, and an emission time constant of 0.3–1.4 μs were obtained for wet oxidation. For dry oxidation, Not+NitSlow of 3.5–11.2×1011 cm−2, NitFast of 0.7–1.25×1010 cm−2 eV−1, and emission time constants of 0.6–2 μs were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353270
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  • 6
    Electronic Resource
    Electronic Resource
    Surface chemical processes in metal organic molecular-beam epitaxy; Ga deposition from triethylgallium on GaAs(100) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4053-4063 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adsorption of triethylgallium on the GaAs (100) (4×1) surface has been studied using the techniques of low energy electron diffraction, x-ray photoelectron and Auger spectroscopies, high resolution electron energy loss spectroscopy and temperature-programmed desorption. Condensed multilayers of the organometallic compound formed following adsorption at 150 K desorb from the surface at ∼170 K to leave a chemisorbed molecular monolayer of triethylgallium. Upon further heating this layer partially desorbs and partially decomposes to form diethylgallium in two competing processes. The diethylgallium so formed can also desorb or otherwise decompose ultimately to adsorbed Ga atoms in a reaction which results in the formation of hydrogen, ethene, and ethane. The temperature-programmed desorption characteristics of these latter species are found to be similar to those observed for a dissociated layer of ethyl bromide. A reaction scheme is proposed to account for the observations and kinetic parameters are obtained from computer modeling of the temperature-programmed desorption results. The reaction scheme is also used to evaluate the temperature-dependent growth rate expected in metal organic molecular beam epitaxial growth of GaAs. Comparison with experimental results is made and the work is discussed in the light of the previous model which has been proposed for the epitaxial growth of GaAs by metal organic molecular-beam epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346242
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic and spectroscopic studies on N-(picolinamido)salicylaldimine complexes of some bivalent 3d metal ions (1981)
    s.l. : American Chemical Society
    Inorganic chemistry 20 (1981), S. 2794-2798 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic50223a012
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  • 8
    Electronic Resource
    Electronic Resource
    Solidification behavior of cinnamic acid - p-nitrophenol eutectic system (1986)
    s.l. : American Chemical Society
    Journal of chemical & engineering data 31 (1986), S. 406-408 
    Details
    ISSN: 1520-5134
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/je00046a009
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  • 9
    Electronic Resource
    Electronic Resource
    The Activation Effect of K2SO4 on the Hydration of Gypsum Anhydrite, CaSO4(II) (2005)
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The effect of K2SO4 activator on the hydration of chemical anhydrite obtained from burned FGD-gypsum has been studied by different experimental techniques. Results obtained show that the degree of hydration increases when the K2SO4 concentrations increase from 0.5 to 3.3 wt%. Their heat evolution rate and maximum value also increase with the increase of K2SO4 concentration. The highest values were obtained when the hydration degree was about 50%. Also a correlation between the hydration degree and the total heat evolved was obtained. The X-ray and SEM/EDX studies have shown that K2SO4 is adsorbed at the surface of CaSO4 even within 5 min of hydration and a syngenite—a double salt K2SO4·CaSO4·H2O is formed (even in the presence of 1.0 wt% K2SO4). Also, important changes in the morphology of the dihydrate crystal are detected. Finally, in the presence of 1.0 wt% K2SO4 (water/anhydrite (W/A) ratio=0.33), it was found that the resonance frequency, modulus of elasticity, compressive strength, and tensile strength increase with the degree of hydration whereas the total porosity decreases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2004.00020.x
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of soyflour supplementation on the quality of cooked noodles (1989)
    Oxford, UK : Blackwell Publishing Ltd
    International journal of food science & technology 24 (1989), S. 0 
    Details
    ISSN: 1365-2621
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: Noodles were prepared from semolina of durum and aestivum wheats and flour of aestivum with or without 10% of different types of full fat soyflour (i.e. enzyme active, conventional and roasted soyflour) and defatted soyflour. Cooked weight and water absorption of noodles increased with the increase in cooking time but decreased with addition of soy solids. The latter also increased losses of total solids and deceased losses of nitrogen into the cooking water. Sensory evaluation of noodles indicated that the product made from durum semolina containing 10% of defatted soyflour was as good as that from durum semolina alone.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1989.tb00624.x
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