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  • 1
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Analytical chemistry 55 (1983), S. 2382-2387 
    ISSN: 1520-6882
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7851-7856 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Heavily carbon-doped GaAs (1×1018∼1×1020 cm−3) grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and arsine as sources and liquid carbon-tetrachloride (CCl4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios, and CCl4 flow rates. Dopant concentration first increased from 550 °C and reached a maximum at 570 °C growth temperature (Tg) and then decreased monotonously. Carbon incorporation was strongly enhanced when the V/III ratio was less than 30 at Tg=590 °C or less than 40 at Tg=630 °C. Hole concentration increased and then decreased as CCl4 flow rate increased. Growth rate of layers decreased as growth temperature and flow rate of CCl4 increased. The doping efficiency of epitaxial layers grown on the (100) substrate was higher than that on the 2° off toward 〈110(approximately-greater-than) misoriented substrate. Carbon-doped GaAs films had higher Hall mobility than zinc-doped GaAs films at high doping levels due to less self-compensation. The highest dopant concentration in this system was 2.3×1020 cm−3 at Tg=580 °C and V/III=10.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6375-6375 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In a trial to develop heat-resistant sintered Nd2Fe14B magnets, a refractory element (Cr/W/Zr/Nb/Ta) was selected as an additive incorporating Dy and Co in the Nd-Fe-B composition. Nd13Dy1.5Fe72−xCo6B7.5Mx alloys (M=Cr/W/Nb/Ta, x=0, or 3.5) were arc-melted, pulverized, compacted, and sintered by the conventional powder metallurgy method. It was found that W/Cr greatly enhances the as-sintered intrinsic coercivity (iHc, in kA/m), e.g., from 510 (x=0) to 810 (W, x=3.5) or 740 (Cr, x=3.5). An additional two-stage annealing at 900 and 600 °C for 1 h each led to an even higher iHc of 1000 (W, x=3.5). While Nb/Ta moderately enhanced as-sintered iHc, and responded less to additional annealing. Temperature coefficients of remanence was found to be greatly improved by the W or Cr addition, e.g., 0.43%/°C for x=0 and 0.06%/°C for M=W, x=3.5 (p=1, 20–150 °C). They are thus very suitable for applications at temperatures up to 150 °C. EPMA analyses showed the possible existence of a M2FeB2 (M=W/Nb/Ta) phase at grain boundaries. Thermomagnetic analyses and detailed microstructure of the sintered and/or annealed magnets are discussed.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6600-6602 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-performance R2Fe14BNx-type magnets (R=Nd and/or Pr/Dy) were successfully prepared by sintering. The optimum magnetic properties are coercivity iHc: 680–1440 kA/m; Hc: 500–1000 kA/m; Br: 1.0–1.3 T; and (BH)m: 180–250 kJ/m3 depending on the composition and processing parameters, especially the proper sintering conditions, including nitrogen intake at 1040 to 1050 °C. The magnets thus obtained have Tc values of 335 to 370 °C depending on the nitrogen content, which should be 〈6 at. % for thermal stability. The anisotropy field increases from 6.2 to 8 T with addition of nitrogen, and magnetization measured at 2 T increases by 18%. The weight loss after immersion in a 5% HCl solution for 30 min is 25% less for nitrogenated magnets than for those without nitrogen, due to the replacement of the Nd-rich phase at grain boundaries by more corrosion- resistant nitrides.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 672-678 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have successfully grown In0.49Ga0.51P/GaAs heterostructures and made InGaP-based high electron mobility transistors (HEMTs) by low-pressure metalorganic chemical vapor deposition. We have found the epitaxial layer of InGaP with a Hall mobility of 4073 cm2/V s (300 K) and the photoluminescence full width at half-maximum of 1 meV (4.2 K) for GaAs, 12 meV (4.2 K) for In0.49Ga0.51P. Zinc-induced disordering phenomenon was examined by transmission electron microscope. By Shubnikov-de Haas measurement, we demonstrated the existence of a two-dimensional electron gas in InGaP/GaAs heterojunctions. The sheet carrier concentration of 2DEG is around 8.8×1011 cm−2 at 1.5 K. A HEMT device with 1 μm×40 μm gate (pattern) shows an extrinsic transconductance of 65.5 mS/mm and an intrinsic transconductance of 266 mS/mm at 300 K.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 7605-7606 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 4771-4776 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The far wing absorption profiles for excitation on the Ca(4s2 1S0–4s5p 1P01) atomic transition, broadened in collisions with He are measured. We observe strong absorption in both wings and a blue wing satellite near Δ∼125 cm−1. We tentatively identify this satellite as due to a maximum in the CaHe(4s2 1∑+–4s5p 1∑+) difference potential. These line-broadening techniques are used to study electronic energy transfer in the spin-changing collisions of Ca with He: Ca(5p 1P01) +He→Ca(5p 3P0J)+He+ΔE. Measurements of the "single collision'' triplet–singlet branching ratio as a function of laser detuning from the atomic resonance frequency indicate a clear red wing/blue wing asymmetry. We interpret this asymmetry in terms of a preferential orbital alignment effect in the energy transfer process [Phys. Rev. Lett. 53, 2296 (1984)]. No clear structure is observed in the range of detunings probed that might indicate the curve crossing responsible for the energy transfer.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1312-1317 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This work investigates the charge transfer and Al(Ga) p-Ni d hybridization effects in the intermetallic Ni3Al (Ni3Ga) alloy using the Ni L3,2 and K edge and Al (Ga) K x-ray absorption near edge structure (XANES) measurements. We find that the intensity of near-edge features at the Ni L3 edge in the Ni3Al (Ni3Ga) alloy decreased with respect to that of pure Ni, which implies a reduction of the number of unoccupied Ni 3d states and an enhancement of the Ni 3d state filling in the Ni3Al (Ni3Ga) alloy. Two clear features are also observed in the Ni3Al (Ni3Ga) XANES spectrum at the Al (Ga) K edge, which can be assigned to unoccupied Al 3p-(Ga 4p-) derived states in Ni3Al (Ni3Ga). The threshold at the Al K-edge XANES for Ni3Al shifts towards the higher photon energy relative to that of pure Al, suggesting that Al loses some p-orbital charge upon forming Ni3Al. On the other hand, the Ni K edge shifts towards the lower photon energy in Ni3Al (Ni3Ga) relative to that of pure Ni, suggesting a gain of charge at the Ni site. Thus both Al and Ni K-edge XANES results imply a transfer of charge from Al 3p orbital to Ni sites. Our theoretical calculations using the spin-polarized first-principles pseudofunction method agree with these results. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2210-2214 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Low-temperature (20 K) luminescent properties of heavily carbon- and zinc-doped GaAs grown by low-pressure metalorganic chemical vapor deposition were investigated. The luminescence linewidth became broader at low temperatures when p(approximately-greater-than)4×1019 cm−3 due to the appearance of a shoulder peak. The main peak shifted to low energy when the dopant concentration was increased; however, the shoulder peak was at around 1.485 eV and was nearly independent of the dopant concentration. The peak of the band-to-acceptor transition occurred at low temperature and dominated the emission spectra of degenerate GaAs. The peak energy of Zn-doped samples was lower than that of C-doped samples because of the existence of defects. The excitation power intensity was varied to investigate the behavior of the shoulder peak for both types of dopants. The shoulder peak was a part of the main peak because of the recombination between the conduction band and the bottom of the impurity band.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5453-5455 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An anomalous mobility enhancement and metallic-type conductivity were observed in heavily carbon-doped GaAs grown by low-pressure metalorganic chemical vapor deposition. The 77 K mobility was slightly lower than that of 300 K for hole concentration between 1×1018 and 4×1018 cm−3. However, the 77 K mobility was enhanced from p(approximately-greater-than)4×1018 cm−3, and the 300 K mobility slowly decreased with increasing hole concentration that ranged from 7×1018 to 3×1019 cm−3. As a result, the 77 K mobility was around 50%–60% greater than the 300 K mobility due to the metallic-type conductivity.
    Materialart: Digitale Medien
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