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  • 1
    Electronic Resource
    Electronic Resource
    Inhomogeneous perturbations and phase resetting in an oscillatory reaction–diffusion system (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 7302-7314 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The response of the Brusselator reaction–diffusion system to inhomogeneous perturbations is studied. The main focus of this work is on a spatial generalization of the phase resetting problem. A randomly chosen fraction p of an initially homogeneous oscillatory system is locally perturbed and driven off the limit cycle. The asymptotic local phase is monitored and averaged over local regions and realizations of the perturbation process. From this information a phase response curve can be constructed which depends both on the local stimulus amplitude and on p. The system exhibits two qualitatively different kinds of response depending on the stimulus amplitude and the phase at which the perturbation is applied. It either relaxes to a spatially homogeneous oscillatory state or develops persistent spatial patterns. The origin of this behavior is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458215
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  • 2
    Electronic Resource
    Electronic Resource
    Phase resetting dynamics for a discrete reaction–diffusion model (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 7315-7322 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The results of a study of spatial pattern formation in a two-dimensional oscillatory reaction–diffusion system are presented. The calculations are carried out on a discrete model of the Brusselator reaction. The system responds to inhomogeneous perturbations in two different ways. For most perturbations it relaxes back to a spatially homogeneous state with a phase shift. However, special perturbations produce persistent structures which consist of spiral waves and target patterns. The nature of these spatio-temporal states is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458216
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  • 3
    Electronic Resource
    Electronic Resource
    Vortex dynamics in oscillatory chemical systems (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 1 (1991), S. 421-434 
    Details
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vortex core dynamics is studied in the Brusselator both near to and far from the Hopf bifurcation line for random and pair initial conditions. Extensive simulations are carried out for a pair of counter-rotating vortices close to the Hopf bifurcation line. Provided the vortices are not so far apart that wave-front annihilation produces strong gradients between their centers, the simulation results compare favorably with theories based on the complex Ginzburg–Landau equation. Far from the Hopf line the vortex core dynamics changes character and phenomena such as periodic motion of the vortex centers arise.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.165852
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  • 4
    Electronic Resource
    Electronic Resource
    Proliferating cell nuclear antigen (PCNA) immunoreactivity in ovarian serous and mucinous neoplasms: diagnostic and prognostic value (1993)
    238 Main Street, Cambridge, Massachusetts 02142, USA : Blackwell Scientific Publications
    International journal of gynecological cancer 3 (1993), S. 0 
    Details
    ISSN: 1525-1438
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Sixty-two serous and mucinous ovarian tumors, an admixture of benign, borderline and malignant neoplasms, were immunostained for proliferating cell nuclear antigen (PCNA), with the monoclonal antibody PC10. The PC10 index, the proportion of cells showing nuclear positive staining, was calculated in each case. All the tumors showed positive immunoreactivity for PCNA. There was no overlap of PC10 counts between benign, borderline and malignant serous tumors but within the mucinous group of neoplasms there was considerable overlap between the counts for borderline and malignant tumors. There was no relationship between the PC10 index and the surgical stage of the malignant neoplasms and the index could not be correlated with patient death. Staining for PCNA does not, therefore, appear to be of any prognostic value in ovarian adenocarcinomas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1525-1438.1993.03060391.x
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  • 5
    Electronic Resource
    Electronic Resource
    Anisotropic giant magnetoresistance induced by magnetoannealing in Fe-Ag granular films : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6484-6486 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of magnetoannealing on the giant magnetoresistance (GMR) in FexAg100−x granular films (X=15, 26, 29, 33, 37, and 60) were investigated. The thin films were annealed in a presence of magnetic field of 3 kOe at different temperatures of 300, 400, and 500 °C using various annealing times. It is found that the anisotropic GMR characteristics were developed when Fe-Ag granular thin films were annealed in the presence of a magnetic field. The anisotropic GMR characteristics of the thin films were closely related to the magnetic anisotropy developed along the field direction during magnetoannealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358233
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  • 6
    Electronic Resource
    Electronic Resource
    A Mössbauer effect study on the acicular cobalt ferrite particles : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6900-6902 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The causes of the coercivity enhancement and the coercivity instability of acicular cobalt ferrite particles containing 0–9.2 wt % Fe2+ ions under the influence of magnetic field and temperature were investigated by means of transverse magnetic field annealing, torque, and Mössbauer experiments. The coercivity enhancement and the instability of Co modified iron oxide particles are closely related to the uniaxial magnetic anisotropy. A Fe2+-CO2+ pair model was proposed to explain the uniaxial magnetic anisotropy of Co modified iron particles. To verify the nature of the Fe2+-Co2+ pair, the probability of one or more Co ions appearing in the neighborhood of a B site Fe2+ ion was calculated using the chemical composition, the Mössbauer parameters, Pi(Fe+2) and Pi(Fe+3) and discussed conditions for forming the pair between the nearest-neighbor Co2+ and Fe2+ ion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358109
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence from nanocrystallites embedded in hydrogenated amorphous silicon films prepared by plasma enhanced chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 220-222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report in this letter the observation of visible photoluminescence (PL) at room temperature from nanocrystallites embedded in hydrogenated amorphous silicon films, which are prepared in a plasma enhanced chemical vapor deposition system by using strong hydrogen-diluted silane as the reactant gas source, without any post-processing. The PL is attributed to the radiative recombination process of carriers in the nanocrystallites, and the quantum size effect is responsible for the emission above the band gap of bulk crystal Si. The critical deposition parameters of this type of film are identified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111510
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  • 8
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of titanium dioxide films with a high magnitude dielectric constant grown on p-Si by metalorganic chemical vapor deposition at low temperature (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1407-1409 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition of titanium dioxide (TiO2) on p-Si(100) using titanium isopropoxide and nitrous oxide via pyrolysis at relatively low (∼500 °C) temperature was performed to produce high quality TiO2/p-Si interfaces and to fabricate TiO2 insulator gates with a dielectric constant of high magnitude. Scanning electron microscopy shows that the surfaces of the TiO2 films have very smooth morphologies. From the x-ray diffraction analysis, the grown layer was found to be a polycrystalline film. Raman spectroscopy showed the optical phonon modes of a TiO2 thin film. The stoichiometry of the TiO2 film was investigated by Auger electron spectroscopy. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples of the Ag/TiO2/p-Si. The interface state density at the TiO2/p-Si interface was approximately high 1011 eV−1 cm−2 at the middle of the Si energy gap, and the dielectric constant determined from the capacitance-voltage measurements was as large as 73. These results indicate the TiO2 layers grown at relatively low temperature can be used for high density dynamic memory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111898
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of PbTiO3 thin films on p-Si grown by metalorganic chemical vapor deposition at low temperature (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1104-1106 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition of PbTiO3 using Pb (tmhd)2, Ti(OC3H7)4, and N2O via thermal pyrolysis at relatively low temperature (∼500 °C) was performed in order to produce PbTiO3 insulator gates with high quality PbTiO3/p-Si interfaces. Raman spectroscopy showed the several optical phonon modes of the PbTiO3/p-Si structure. The stoichiometry of the PbTiO3 films was observed by Auger electron spectroscopy. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with a PbTiO3 insulator gate, and the interface state densities at the PbTiO3/p-Si were approximately 1011 eV−1 cm−2 at the middle of the Si energy gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109794
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  • 10
    Electronic Resource
    Electronic Resource
    Interdiffusion problems at CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1101-1103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe epitaxial films were grown by a simple method of temperature gradient vapor transport deposition on p-InSb (111) orientation substrates in the growth temperature range between 200 and 280 °C. Raman spectroscopy showed the optical phonon modes of the CdTe thin films and the formation of an indium telluride interfacial layer in the CdTe/InSb heterostructures. The stoichiometry of the CdTe/InSb heterostructures was observed by the Auger electron spectroscopy, and Auger depth profiles also demonstrated that the CdTe/InSb heterointerface was not abrupt. The results indicated that the films grown at about 265 °C posed a significant problem due to interdiffusion from the InSb substrates during the growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107681
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