Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
71 (1992), S. 4277-4285
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The growth process in the initial deposition stage of Ge films on an Si(001) surface where tellurium is adsorbed was investigated. The growth mode of these films was found to change to layered growth on a Te/Si(001) surface, i.e., Te atoms were observed on the surface of the Ge films as a result of successive site exchanges between the Te and Ge atoms. Thus, Te is believed to act as a surfactant to grow Ge in a layer-by-layer mode on a Si substrate. The growth process was observed in situ by reflection high-energy electron diffraction and low-energy electron diffraction, with the microstructure of Ge films being examined in detail using a transmission electron microscope.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350809
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |