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  • 1
    Electronic Resource
    Electronic Resource
    Evaluation of grain boundary trap states in polycrystalline–silicon thin-film transistors by mobility and capacitance measurements (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4637-4645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for evaluating localized grain boundary (GB) trap states in polycrystalline–silicon thin-film transistors (poly-Si TFTs) is proposed. Field effects in poly-Si TFTs are analyzed by decomposition of the two-dimensional Poisson's equation. This analysis gives the theoretical basis for evaluating the localized GB trap state density. The trap states are evaluated with the GB barrier potential given by the activation energy of the effective mobility and with the surface potential calculated from the capacitance–voltage characteristics in poly-Si TFTs. This evaluating method was applied to several different types of poly-Si TFTs fabricated with excimer laser annealing crystallization processes. This method has succeeded experimentally in eliminating the error effects related to oxide–semiconductor interface trap states and in clarifying that the GB barrier potential has a peak in its gate bias dependence. This method has also elucidated that the GB trap state density has almost the same value independent of the grain size when the hydrogenation efficiency in poly-Si is in the same level between TFTs. The good agreement of the simulated and the measured drain currents confirm the validity of this method. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454202
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidation of H-terminated Si(100) surfaces studied by high-resolution electron energy loss spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5125-5129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adsorption of oxygen on H-terminated Si(100) surfaces has been investigated by high-resolution electron energy loss spectroscopy (HREELS). Adsorptions of atomic oxygen occur even at room temperature. Si-OH stretching and Si-O-Si (B1) vibrational modes are observed in HREELS spectra, which indicates that atomic oxygen is adsorbed on sites of Si—H bonds and Si—Si back bonds. On the other hand, H-terminated surfaces are very stable for molecular oxygen, which cannot adsorb until 380 °C on the surface. A dissociative adsorption of molecular oxygen is observed above 380 °C and the activation energy of the adsorption is 2.0 eV at 380–450 °C. This value coincides with the desorption energy of hydrogen atoms from a Si(100) surface with the monohydride phase. These results indicate that the dangling bonds are essential to the adsorption of molecular oxygen on Si(100) surfaces. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359323
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  • 3
    Electronic Resource
    Electronic Resource
    Neutron diffraction study of artificial CoO-NiO superlattices (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 205-206 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neutron diffraction measurements were made on artificial superlattices of CoO-NiO, (CoO)m(NiO)n×l prepared on the (0001) surface of α-Al2O3. (111) layers of CoO and NiO, each less than 2 nm thick (2≤m,n≤8), were stacked alternatively to a total thickness of less than 70 nm (m+n≤15,l≤25). A well-defined magnetic Bragg peak indexed as (1/2 1/2 1/2) was observed for all the samples, and a magnetic structure of type FCC2 with the spin axis lying in the (111) planes grown was suggested. The temperature dependence of the magnetic peak intensity revealed a sharp, single magnetic transition. The Néel temperature was found to vary as a linear function of n/(m+n).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98924
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  • 4
    Electronic Resource
    Electronic Resource
    Third-order nonlinear optical properties of retinal derivatives (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 411-413 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Retinal derivatives were synthesized and their third-order nonlinear optical properties were measured by degenerate four-wave mixing with temporally incoherent nanosecond laser pulses. Fast optical nonlinearities, whose response time was shorter than 30 ps, were observed. The magnitudes of resonant third-order hyperpolarizability were found to be 10−31∼10−29 esu. The large optical nonlinearities were of electronic origin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102796
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  • 5
    Electronic Resource
    Electronic Resource
    LACK OF ABNORMALITY IN BRAIN AROMATIC AMINES IN RATS AND MICE SUSCEPTIBLE TO AUDIOGENIC SEIZURE (1969)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 16 (1969), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The levels of certain amines (catecholamines, 5-HT, and ‘histamine’) and of certain enzymes (tyrosine hydroxylase, tryptophan hydroxylase, ChAc, or AChE) in whole brain or selected brain areas of rats and mice susceptible to audiogenic seizure have been compared with the levels in matched groups of non-sensitive animals. Sensitive groups included both those where susceptibility is inborn and those where it is induced by administration of methionine sulphoximine or thiosemicarbazide. No significant difference was found which could be correlated with susceptibility to audiogenic seizure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1969.tb08984.x
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  • 6
    Electronic Resource
    Electronic Resource
    Transduction Mechanisms (1968)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Genetics 2 (1968), S. 245-278 
    Details
    ISSN: 0066-4197
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ge.02.120168.001333
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  • 7
    Electronic Resource
    Electronic Resource
    Resonant nonlinear optical response of electronic excited state of a cyanine dye crystal with large oscillator strength (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2463-2465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant nonlinear optical response was measured in a crystalline cyanine dye MPER, 5-(5-morpholino-2,4-pentadienilydene)-3-ethylrhodanine, which had a broad reflection band due to large oscillator strength of an electronic excited state in the visible wavelength region. Nonlinear optical response measured by the change of reflectivity under optical pumping at the wavelength of the peak of the excited state was composed of fast and slow components. Response time of the fast component was less than 4 ps and its nonlinear optical coefficient χ(3) was evaluated to be (5±2)×10−15 m2/V2 [(4±2)×10−7 esu], which was one of the largest among organic materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110476
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  • 8
    Electronic Resource
    Electronic Resource
    Photon-induced current of polycrystalline-silicon thin-film transistors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3259-3261 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photon-induced current (Iph) in polycrystalline-silicon thin-film transistors (poly-Si TFTs) has been investigated using a line-shaped light beam scanning method. In the off-state region, photon-excited carriers in the channel region diffuse to the drain with the diffusion length independent of the poly-Si grain size. The diffusion length is also independent whether poly-Si is hydrogenated or not. This phenomenon is observed in both n-channel and p-channel TFTs. In the subthreshold region, Iph follows the general transport equation in poly-Si. In the inversion region, Iph is proportional only to the total amount of excited carriers in the channel. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1374224
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  • 9
    Electronic Resource
    Electronic Resource
    PHYSIOLOGICAL BASIS OF VISUAL ACUITY AND ITS DEVELOPMENT IN KITTENS (1979)
    Oxford, UK : Blackwell Publishing Ltd
    Child 5 (1979), S. 0 
    Details
    ISSN: 1365-2214
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine , Psychology
    Notes: Summary To answer the questions, (1) Which cells in the visual system are responsible for high visual acuity and (2) Does the function of the cells which provide high visual acuity develop postnatally; single cell studies have been made in the retina, lateral geniculate nucleus (LGN) and visual cortex of cats of different ages. Sustained-X retinal ganglion cells in the area centralis (the equivalent retinal position to the human fovea) set the upper limit of visual acuity. The cellular acuity develops postnatally until it reaches the adult level at 3–4 months-of-age. The improvement of acuity is associated with an increase in the strength of the inhibitory surround mechanism of the receptive field of sustained cells in the area centralis. The maturation of cellular acuity coincides with maturation of retinal and LGN synaptic organisation and of optic nerve myelination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2214.1979.tb00141.x
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of trampling and ethephon on leaf morphology in trampling-tolerant Plantago asiatica and Eleusine indica (2003)
    Oxford, UK : Blackwell Science Ltd
    Weed research 43 (2003), S. 0 
    Details
    ISSN: 1365-3180
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Summary The effects of simulated human trampling on leaf morphology and ethylene production as well as the effect of an ethylene releaser ethephon on leaf morphology were investigated for trampling-tolerant species, Plantago asiatica and Eleusine indica, and trampling-susceptible species, Gnaphalium affine and Panicum bisulcatum. In Pl. asiatica, trampling decreased the leaf length and increased the leaf blade length to width ratio and the leaf blade length to leaf (leaf blade + petiole) length ratio. In E. indica, trampling only decreased the leaf blade length to width ratio. Trampling increased ethylene production in intact seedlings of Pl. asiatica, E. indica and G. affine. The ethephon (1 mM) treatment increased the leaf blade length to width ratio in seedlings of Pl. asiatica, but decreased that in seedlings of E. indica in a manner similar to the morphological changes induced by trampling. In contrast, no significant differences in leaf morphology were observed between the ethephon-treated and control seedlings of trampling-susceptible species. These results suggest that trampling-tolerant species have higher responsiveness to ethylene than trampling-susceptible species and change their leaf morphology in response to ethylene induced by trampling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3180.2003.00329.x
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