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  • 1
    Digitale Medien
    Digitale Medien
    Green Upconversion Emission from Er3+ Ion Doped into Sol-Gel Silica Glasses under Red Light (647.1 nm) Excitation (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 4447-4450 
    Details
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/j100013a013
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  • 2
    Digitale Medien
    Digitale Medien
    Harmonic mixing at mm waveband in a high temperature superconducting grain boundary Josephson junction (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2286-2288 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using a high Tc superconducting grain boundary Josephson junction, harmonic mixing experiments in the mm waveband were carried out, aiming at as large a harmonic number and as high a signal frequency as possible. The dependencies of intermediate frequency output on dc bias, harmonic number, frequency of local oscillator (LO), and other parameters were carefully studied. Until now, our best result was the mixing between the signal at 95 GHz and the 105th harmonic of LO at about 900 MHz. Preliminary experiments using a high Tc harmonic mixer and phase-locking loop were tried to stabilize the frequency of a mm wave source.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356293
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  • 3
    Digitale Medien
    Digitale Medien
    Vertical drift of P–E hysteresis loop in asymmetric ferroelectric capacitors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8634-8637 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: One kind of distortion in P–E hysteresis of ferroelectric thin-film capacitors, namely vertical drift of P–E hysteresis loop, is discussed. This kind of distortion, usually observed in asymmetric ferroelectric thin-film capacitors, originates from the asymmetric conduction of the capacitor at different polarities. The shapes of the distorted hysteresis loops are studied by applying a simple circuit model with respect to the measuring frequency, applied voltage amplitude, and different leakage conductance, etc. and are verified with experiment. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362485
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  • 4
    Digitale Medien
    Digitale Medien
    Structural properties of carbon nitride films prepared by high dose nitrogen implantation into carbon thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2364-2368 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Carbon nitride films were successfully prepared by ion beam synthesis method. 100 keV N+ ions at a dosage of 1.2×1018 cm−2 were implanted into carbon thin films at different temperatures. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering spectroscopy (RBS), x-ray diffraction analysis (XRD), and Vickers microhardness measurement. XPS results show that most of the implanted nitrogen atoms are free state. Most of the carbon atoms have C–C bonding and a little of them form a C–N bond. It also can be clearly seen that the content of the C–N covalent bonding state in the samples is increased by raising the implanting temperature of the samples. Raman spectrum indicates that there is a Raman band near 2300 cm−1 corresponding to carbon-nitrogen stretching. XTEM and RBS studies show that there is a buried layer of carbon nitride. XRD and TEM analyses reveal that the buried carbon nitride is predominantly amorphous with a small volume fraction of nanocrystallites. The sample has a higher hardness than that of a carbon thin film. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.361163
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  • 5
    Digitale Medien
    Digitale Medien
    Study of subband electronic structure of Si δ-doped GaAs using magnetotransport measurements in tilted magnetic fields (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8482-8487 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Si δ-doped GaAs grown by metal organic vapor phase epitaxy (MOVPE) is characterized using magnetotransport measurements in tilted magnetic fields. Angular dependence of the longitudinal magnetoresistance (Rxx) vs the magnetic field (B) traces in tilted magnetic fields is used to examine the existence of a quasi-two-dimensional electron gas. The subband electron densities (ni) are obtained applying fast Fourier transform (FFT) analysis to the Rxx vs B trace and using mobility spectrum (MS) analysis of the magnetic field dependent Hall data. Our results show that (1) the subband electron densities remain roughly constant when the tilted magnetic field with an angle 〈30° measured from the Si δ-doped plane normal is ramped up to 13 T; (2) FFT analysis of the Rxx vs B trace and MS analysis of the magnetic field dependent Hall data both give the comparable results on subband electron densities of Si δ-doped GaAs with low δ-doping concentration, however, for Si δ-doped GaAs with very high δ-doping concentration, the occupation of the lowest subbands cannot be well resolved in the MS analysis; (3) the highest subband electron mobility reported to date of 45 282 cm2/s V is observed in Si δ-doped GaAs at 77 K in the dark; and (4) the subband electron densities of Si δ-doped GaAs grown by MOVPE at 700 °C are comparable to those grown by MBE at temperatures below 600 °C. A detailed study of magnetotransport properties of Si δ-doped GaAs in the parallel magnetic fields is then carried out to further confirm the subband electronic structures revealed by FFT and MS analysis. Our results are compared to theoretical calculation previously reported in literature. In addition, influence of different cap layer structures on subband electronic structures of Si δ-doped GaAs is observed and also discussed. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362524
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  • 6
    Digitale Medien
    Digitale Medien
    Non-ohmic behavior of the high-field magnetoresistances in AlGaAs/GaAs heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2052-2055 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this communication are reported the measurements and analyses of the dependence of the high-field magnetoresistivities (ρxx and ρxy) on the current density in AlGaAs/GaAs heterojunctions. The strong current dependence of spin-up and spin-down levels can be observed both for ρxx and for ρxy. It was found that at low temperatures and in strong magnetic fields a quantity R=B(dρxy/dB), with B the magnetic field, exhibits similar line shape and non-ohmic behavior to those of ρxx, which dramatically confirms the unresolved proportionality ρxx∼R. In high magnetic fields R shows a stronger oscillation structure, especially for spin levels, than that observed in ρxx. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358844
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  • 7
    Digitale Medien
    Digitale Medien
    Capability of permeate hydrogen through palladium-based membranes for acetylene hydrogenation (1993)
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 32 (1993), S. 2614-2619 
    Details
    ISSN: 1520-5045
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ie00023a026
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  • 8
    Digitale Medien
    Digitale Medien
    Population inversion in an optically pumped single quantum well (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3166-3169 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An optically pumped intersubband laser generator is proposed in which the continuum states above an Al0.2Ga0.8As–GaAs–Al0.2Ga0.8As single quantum well with a width of L=17 nm serve as the highest level in a four-level laser system. The design allows much greater flexibility in the choice of pumping source and simplifies considerably the device fabrication. We have obtained the electronic subband structure of the proposed device and utilized a simple rate equation approach to examine the electron density in different states under optical pumping. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1287604
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  • 9
    Digitale Medien
    Digitale Medien
    30 Hz–10 kHz hysteresis loop tracer with field up to 0.1 T for high-Tc superconductors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2830-2833 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A hysteresis loop tracer to measure the ac magnetization of high-Tc superconductors in the frequency range of 30 Hz–10 kHz is described, with driving field amplitudes up to 0.1 T. Due to the high frequency of the magnetic field, the hysteresis loops could be displayed on an oscilloscope and their details could be observed. The demagnetization factor, the stability, and the frequency characteristics of the tracer were tested. The ac magnetization of granular high-Tc superconductors was studied as a function of field amplitude and frequency. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1148203
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  • 10
    Digitale Medien
    Digitale Medien
    Two new all-organic complexes with electrical bistable states (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2241-2242 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Two all-organic complexes, MC+TCNQ and BBDN+TCNQ, with electrical bistable states at room temperature have been discovered. The resistivity of these thin films prepared in vacuum can be transferred from high to low under a voltage of few volts. The transition time is 〈100 ns. Therefore, both materials are suitable for making write-once read-only memories. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115116
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