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  • 1
    ISSN: 1432-2323
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Résumé Entre Janvier 1980 et Décembre 1991, nous avons opéré 295 patients ayant un cancer gastrique. Chez 166 (56.3%), l'exérèse a été jugée curative. Chez 93 (56%) des cas, il s'agissait d'une gastrectomie subtotale alors que dans 73 (44%) cas, une gastrectomie totale a été pratiquée. Dans tous les cas une lymphadénectomie du type D-2 lui a été associée. La morbidité globale a été de 23% et la mortalité hospitalière de 3.6%. La morbidité et la mortalité des deux types d'intervention différaient de façon statistiquement significative. La survie à 5 ans de la série en entier a été de 61.3%. Une analyse uni et multifactorielle a pu mettre en évidence une différence statistiquement significative en ce qui concerne la survie par rapport à la classification T-N (TNM), le nombre de ganglions réséqués et le nombre de ganglions envahis/nombre de ganglions enlevés. Cette analyse a permis d'identifier les malades à haut risque, indépendamment du site de l'envahissement lymphatique. La courbe de survie et la survie estimée à 5 ans étaient identiques selon que la tumeur a été classée intestinale ou diffuse selon Lauren. Cette classification n'a pas, pourtant, de valeur pronostique d'après les analyses uni et multifactorielle. A notre avis, la pénétration tumorale et le degré d'envahissement lymphatique sont les deux facteurs pronostiques les plus constants.
    Abstract: Resumen En el período enero 1980 a diciembre 1991 se operaron 295 pacientes con carcinoma gástrico. En 166 (56.3%), la cirugía fue realizada con intención curativa; en 93 (56%) se realizó gastrectomía subtotal y en 73 (44%) gastrectomía total. En la totalidad de los casos se realizó linfadenectomía “D-2”. La mortalidad global fue 23% y la mortalidad hospitalaria 3.6%. Las tasas de mortalidad y morbilidad de estas dos operaciones aparecieron significativamente diferentes. La sobrevida global a cinco años estimada para la totalidad de la serie es de 61.3%. Los análisis uni y multivariables de acuerdo con la clasificación TNM, el número de ganglios positivos resecados y la relación positivos/resecados revelaron resultados estadísticamente diferentes. Este tipo de clasificación cuantitativa permitió la identificación de Grupos de alto riesgo independientes del lugar de la invasión ganglionar. Los tumores clasificados como intestinales o difusos (clasificación de Lauren), registraron similares curvas de sobrevida y de sobrevida estimada a cinco años (P=0.834). Mediante el análisis univariable y multivariable esta clasificación no demostró tener valor pronóstico en nuestro Grupo de pacientes. En nuestra opinión, el grado de penetración del tumor y la invasión ganglionar son los factores de pronóstico más confiables.
    Notes: Abstract From January 1980 to December 1991 we operated on 295 patients with a gastric carcinoma. In 166 cases (56.3%) surgery was performed with curative intent. In 93 patients (56%) a subtotal gastrectomy was performed, and in 73 cases (44%) a total gastrectomy. In all the cases a D-2 type lymphadenectomy was used. The global morbidity rate was 23%, and in-hospital mortality was 3.6%. The morbidity and mortality rates of these two operations were statistically different. Global 5-year survival estimate for the whole series is 61.3%. Univariate and multivariate analysis according to T and N (TNM classification), the number of positive nodes resected, and the relation of positive per resected nodes, revealed statistically different outcomes. This kind of quantitative classification allowed identification of high risk groups irrespective of site of nodal involvement. Tumors classified as intestinal or diffuse type by the Lauren classification had similar survival curves and 5-year survival estimates (p=0.834). By univariate and multivariate analysis this classification did not reveal a prognostic value in this group of patients. In our opinion, tumor penetration and lymph node involvement are at present the most reliable prognostic factors available.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured by internal photoemission the conduction-band discontinuity ΔEc in p-In0.53Ga0.47As/n-InP heterojunctions with a Si δ layer (1×1012 cm−2) inserted in InP at 10 A(ring) from the interface. The n-type Si δ doping induced an inhomogeneous and temperature-dependent conduction-band offset reduction as revealed by two onsets in the spectral response. The first one was absent in room-temperature data and was due to the Si intralayer presence. The second correlated with the conduction-band discontinuity value for heterojunctions without δ doping and its presence served as an indication of the inhomogeneity of the Si δ layer. The measured value of the modification was 0.11±0.04 eV in good agreement with the calculated one. Current-voltage measurements confirmed that the Si δ layer modified the transport parameters of the heterojunction only at low temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3710-3713 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Core-level photoemission peaks taken on several insulators with spatial resolution of 30–300 μm rigidly shift in energy from place to place, most likely because of local charging effects. Such phenomena can affect the linewidth and the general lineshape of conventional, spatially integrated spectra even when a flood gun is used, which is one of the standard remedies against charging. This may require a critical revision of photoemission linewidths and lineshapes for many past experiments on insulators.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 292-296 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a modification by thin silicon nitride intralayers of the Au/n-GaAs(100) Schottky barrier height. Thin intralayers were obtained by nitridation of evaporated Si films on decapped GaAs substrates in an argon–nitrogen mixture plasma. The nitridation was performed at a beam energy 〈40 eV, with 573 K sample temperature. Gold was deposited to study in situ the Schottky barrier formation process with x-ray photoelectron spectroscopy. Internal photoemission spectroscopy and current–voltage measurements were used to evaluate the barrier modification on fully formed interfaces. Such a modification was analyzed in terms of theoretical calculations of the dipole created by the substrate–intralayer bonds. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1460-1464 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using (secondary) photoelectron emission microscopy, we studied the fully formed 80 A(ring) Pt/n–GaP(001) interface with a lateral resolution better than 2 μm. We probed the chemically etched and sulfur passivated GaP(001) surface by ultraviolet and soft x rays. The radiation source was either a deuterium lamp or the radiation from ELETTRA's U12.5 undulator. Due to their escape depth, the photoemitted secondary electrons carry chemical information of buried interfaces. The use of tunable synchrotron radiation enabled us to obtain chemical contrast by digital subtraction of the microimages taken at photon energies above and below each core-level absorption edge. The microimages revealed lateral changes in photoyield efficiency and chemical composition. The results were confirmed by x-ray photoemission spectromicroscopy measurements performed using Al Kα radiation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7114-7122 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin silicon dioxide films nitrided in N2O by rapid thermal processing (RTP) or in a classical furnace were investigated by x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and electrical measurements on metal-oxide-semiconductor capacitors. Differences between the two nitridation processes were observed and explained. In lightly nitrided films, nitrogen occupies two configurations. Nitrogen is bound to three silicon atoms with at least one in the substrate or all three in the oxide. In RTP-nitrided films, both of these species are confined to within 1.5 nm of the Si/SiO2 interface. In furnace-nitrided films, the first species is also located close to the interface whereas the second one fills most of the regrown oxide thickness. In furnace-grown films, which are more heavily nitrided, a third structure due to Si2=N–O is observed throughout the layer. The electrical characteristics are well correlated with the amount of nitrogen at the interface that is bound to Si atoms in the substrate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1100-1104 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microchemical composition and the electronic structure of the two superconductors HgBa2Ca2Cu3O8+δ (Hg-1223) and HgBa2Ca1Cu2O6+δ (Hg-1212) were analyzed with the technique of photoemission with high spatial resolution. This enabled primary spectral peaks to be separated from their satellites due to local charging induced by the primary photon beam. Each sample contains superconducting and impurity phases with inhomogeneous spatial distributions. The oxygenation-induced increase in the critical temperature is related to a increase in the Cu-O plane carrier concentration.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6169-6171 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report magnetization measurements in the zero magnetostriction Co70.4Fe4.6Si15B10 amorphous alloy. The measurements were carried out from room temperature up to 430 °C and for applied magnetic fields up to 45 Oe. An irreversible behavior in the zero-field and field-cooled magnetization was observed. The irreversibility line was fitted to a de Almeida–Thouless line with a crossover critical exponent φ=4.66. The experimental results are analyzed in the framework of an extended random anisotropy model for amorphous ferromagnets.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7694-7696 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning photoelectron spectromicroscopy experiments on the edge of patterned Si overlayers on GaSe revealed the presence of an inhomogeneous reaction with a metallic-like Ga phase separation. The Si–Se chemically shifted components show lateral variations and a thickness-related SiSe2/SiSex (x=0.5, 1, and 1.5) ratio on a micrometer scale. The dependence of the peak intensities on the overlayer thickness suggests an initial layer-by-layer coverage until (approximate)2 Å, followed by a clustering growth mode. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1990-1993 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the deposition of Au, In, Ag, and Al overlayers onto clean-cleaved GaTe(001) surfaces at room temperature by x-ray photoelectron spectroscopy. Gold and In overlayers did not produce evidence of chemical reactions, and neither with cation nor anion outdiffusion. Gold overlayers exhibited no evidence of island formation and a layer-by-layer overlayer coverage. The deposition of In revealed the presence of clustering for a metal thickness higher than 6 Å. On the other hand, the deposition of Al lead to an exchange reaction with a metalliclike Ga phase separation. Core level analysis of the Ag–GaTe interface revealed no noticeable change of the shape of the peaks. The dependence of the peak intensities on overlayer thickness showed an initial layer-by-layer coverage until 1.8 Å, followed by a clustering growth mode. From about 3.7 Å Ag thickness, significant Te outdiffusion was observed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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