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  • 1
    Electronic Resource
    Electronic Resource
    Deep states in silicon on sapphire by transient-current spectroscopy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5262-5264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that deep states in silicon on sapphire (SOS) films can be evaluated by transient-current spectroscopy (TCS). In the TCS spectra, a broad peak extending over 100–200 K was observed for the 6000-Å-thick n-type SOS film. Assuming the value of capture cross section to be 10−15 cm2 and independent of temperature, the density distribution of deep states was estimated. The density distribution shows a peak of 1.2×1012 cm−2 eV−1 at EC−0.25 eV. Raman backscattering spectroscopy was also performed to evaluate the stress in the silicon film. It was concluded that the defects detected by TCS should be caused by the compressive stress of 6.2×108 Pa in the silicon film. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366394
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  • 2
    Electronic Resource
    Electronic Resource
    Preparation of Bi4Ti3O12 films on a single-crystal sapphire substrate with electron cyclotron resonance plasma sputtering (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 243-245 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi-Ti-O oxide thin films were prepared on a sapphire single-crystal substrate by electron cyclotron resonance (ECR) plasma sputtering. The target used was a sintered Bi4Ti3O12(BIT) and the substrate was controlled in the temperature range 400–640 °C(Tsub). The film sputtered at Tsub=400 °C was a pyrochlore type oxide(Bi2Ti2O7), which changed to a Bi4Ti3O12 oxide in the polycrystalline state at 500 °C and in the single crystalline state at 640 °C. In the film sputtered at 640 °C, the (001) plane of the Bi4Ti3O12 grew parallel to the (112¯0) and (11¯02) planes of the sapphire substrate, and the (104) plane of Bi4Ti3O12 grew parallel to the (0001) plane of the sapphire substrate. The deposition rate was about 200 A(ring)/min independent of the sputtering conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104702
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  • 3
    Electronic Resource
    Electronic Resource
    Deep level of iron-hydrogen complex in silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3828-3831 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels related to iron in n-type silicon have been investigated using thermally stimulated capacitance (TSCAP) combined with minority carrier injection. The TSCAP measurement reveals two traps of EV+0.31 and EV+0.41 eV. The trap of EV+0.41 eV is a donor due to interstitial iron. The trap of EV+0.31 eV, due to a complex of interstitial iron and hydrogen, is observed in the sample etched chemically with an acid mixture containing HF and HNO3 and annihilates after annealing at 175 °C for 30 min. It is demonstrated that interstitial 3d transition metals such as vanadium, chromium, and iron tend to form complexes with hydrogen in n-type silicon, and the complexes induce donor levels below the donor levels of the isolated interstitial species. This trend is related to the interaction between the metals and hydrogen in the complexes. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365746
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  • 4
    Electronic Resource
    Electronic Resource
    Growth kinetics of CoSi formed by ion beam irradiation at room temperature (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5480-5483 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth kinetics of cobalt silicide layers formed by ion beam irradiation was investigated at a temperature between room temperature and 100 °C. The CoSi phase was identified by x-ray diffraction of Co/Si samples irradiated with 25 keV argon ions to a dose of 2.0×1015 cm−2. The number of intermixed silicon atoms in the CoSi layers was evaluated as a function of dose, dose rate, and nuclear energy deposition rate at the Co/Si interface for samples irradiated with 40 keV focused silicon ion beams. The growth is shown to be diffusion-limited and attributed to radiation-enhanced diffusion with an activation energy of 0.16 eV. The number of intermixed silicon atoms is approximately proportional to the nuclear energy deposition rate at the initial Co/Si interface, while it is independent of dose rate, which shows that the CoSi phase is formed without contribution of the sample heating caused by irradiation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366460
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  • 5
    Electronic Resource
    Electronic Resource
    EXISTENCE OF ASCORBIC ACID AS AN ACTIVATOR OF THIAMINE DlPHOSPHATASE IN RAT BRAIN (1979)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 32 (1979), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The effect of the supernatant fraction (105,000 g for 60 min) of rat brain on the microsomal thiamine diphosphatase activity was examined. The thiamine diphosphatase activity was increased by addition of the supernatant fraction. The factor activating the enzyme was a heat-stable and dialyzable substance. It caused lipid peroxidation in the microsomes and the increase of the enzyme activity was mediated through lipid peroxidation of the preparation. When the supernatant fraction was chromatographed on columns of Sephadex G-25 and Dowex 1 × 2, the activator was eluted in fractions containing ascorbic acid. The inhibitory factor of ATPase present in the supernatant fraction was also eluted with the activator. The u.v.-spectrum of the active fraction obtained by these chromatographies was the same as that of ascorbic acid. These findings indicate the existence of ascorbic acid as an activator of thiamine diphosphatase in rat brain and confirm the previous finding that the soluble factor inhibiting ATPase activity is ascorbic acid.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1979.tb00369.x
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  • 6
    Electronic Resource
    Electronic Resource
    PROPERTIES OF THIAMINE DI- AND TRIPHOSPHATASES IN RAT BRAIN MICROSOMES: EFFECTS OF CHLORPROMAZINE (1975)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 24 (1975), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract— The mechanism of the action of chlorpromazine on rat brain thiamine phosphatases were studied to clarify the properties of these enzymes in the CNS. Chlorpromazine at concentrations of 0.25-1.0 mm caused marked decrease of microsomal and soluble thiamine triphosphatase (TTPase) activities and marked increase of microsomal thiamine diphosphatase (TDPase) activity. Imipramine and desipramine also inhibited TTPase but did not cause any marked change in TDPase activities. Addition of chlorpromazine (0.5 mm) decreased the Vmax of microsomal TTPase by about one-half, increased that of TDPase about 3-fold, and lowered the Km value for TDP but not for TTP.Acetone treatment of the microsomal fraction lowered the TTPase activity and markedly enhanced the TDPase activity. In acetone-treated microsomes, chlorpromazine also inhibited TTPase activity but did not activate TDPase. Deoxycholate had similar effects to chlorpromazine on these enzyme activities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1975.tb03900.x
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  • 7
    Electronic Resource
    Electronic Resource
    MECHANISM OF ACTION OF NOTEXIN AND NOTECHIS 11-5 ON SYNAPTOSOMES (1978)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 31 (1978), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The neurochemical activity of notexin and notechis II-5 was investigated using a synaptosomal preparation of rat cerebral cortices. In preparations preincubated with [3H]choline in order to label acetylcholine, the toxins caused a rapid release of the transmitter which was calcium-dependent. The toxins were also potent inhibitors of high affinity choline uptake. Both agents produced a marked depolarization of the synaptosomal preparation as measured by a fluorescent dye and at high concentrations lysed the preparation. At a concentration of 0.1 μM, notexin and notechis II-5 caused a 50% increase in the efflux of lactate dehydrogenase activity. These results, together with electron microscopic observations, indicated that the toxins disrupt the synaptosomal membranes presumably by their inherent phospholipase activity. The release of acetylcholine and inhibition of choline uptake, together with the depolarization of synaptosomal membranes noted in this study, could explain the observed electrophysiological effects of these toxins.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1978.tb00135.x
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  • 8
    Electronic Resource
    Electronic Resource
    Postprandial change in canine blood viscosity
    Amsterdam : Elsevier
    Comparative Biochemistry and Physiology -- Part A: Physiology 105 (1993), S. 587-592 
    Details
    ISSN: 0300-9629
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0300-9629(93)90438-A
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  • 9
    Electronic Resource
    Electronic Resource
    Stimulation of thiamine diphosphate activity by ascorbic acid in rat brain microsomes
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/General Subjects 583 (1979), S. 159-166 
    Details
    ISSN: 0304-4165
    Keywords: (Microsome) ; (Rat brain) ; Antioxidant ; Ascorbic acid ; Glutathione ; Thiamine diphosphatase
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-4165(79)90423-9
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  • 10
    Electronic Resource
    Electronic Resource
    Difference in thiamine metabolism between extensor digitorum longus and soleus muscles
    Amsterdam : Elsevier
    Comparative Biochemistry and Physiology -- Part B: Biochemistry and 94 (1989), S. 399-403 
    Details
    ISSN: 0305-0491
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0305-0491(89)90363-5
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