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  • 1
    Electronic Resource
    Electronic Resource
    3ω method for specific heat and thermal conductivity measurements (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 2996-3003 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a 3ω method for simultaneously measuring the specific heat and thermal conductivity of a rod- or filament-like specimen using a way similar to a four-probe resistance measurement. The specimen in this method needs to be electrically conductive and with a temperature-dependent resistance, for acting both as a heater to create a temperature fluctuation and as a sensor to measure its thermal response. With this method, we have successfully measured the specific heat and thermal conductivity of platinum wire specimens at cryogenic temperatures, and measured those thermal quantities of tiny carbon nanotube bundles some of which are only ∼10−9 g in mass. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378340
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  • 2
    Electronic Resource
    Electronic Resource
    Grain growth and strain release in nanocrystalline copper (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6408-6414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grain growth and strain release processes in the electrodeposited nanocrystalline (nc) Cu specimen with a high purity were investigated by means of differential scanning calorimetry, x-ray diffraction, electrical resistance measurement, and high-resolution transmission electron microscopy. It was found that for the as-deposited nc Cu, the grain growth started at about 75 °C, at which the microstrain in (111) plane (e111) began to release, while the mean microstrain and that in (100) plane (e100) began to release at a higher temperature (150 °C). With an increment in microstrain in the nc Cu introduced by cold rolling, the grain growth onset temperature increased while the strain release onset temperature dropped obviously. These results showed an evident correlation between the grain size stability and the microstrain in the nc materials. The activation energy for the grain growth was determined by using Kissinger analysis and isothermal kinetics analysis, being about 86 kJ/mol, implying that the grain growth process is dominated by grain boundary diffusion. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367401
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of degree of amorphization of Si on the formation of titanium silicide (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2842-2846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanisms of the formation of titanium silicide from the reaction of a single thin film of Ti on the silicon substrate with different degrees of substrate amorphization were studied using differential scanning calorimetry. With increased amorphization, an exothermic reaction prior to C49-TiSi2 formation was observed. X-ray diffraction discovered an unidentified phase together with Ti5Si3 and Ti5Si4 that disappeared with subsequent formation of C49-TiSi2 at temperatures above 650 °C. The difference in Gibbs free energy was considered in explaining the formation of Ti5Si3 and Ti5Si4. Based on the Scherrer equation, the resultant C49-TiSi2 grains with higher degrees of silicon substrate amorphization were smaller than those without silicon substrate amorphization. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1432768
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  • 4
    Electronic Resource
    Electronic Resource
    InGaAsP p-i-n photodiodes for optical communication at the 1.3-μm wavelength (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4730-4732 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The preparation and properties of Cd-diffused p-n homojunction InGaAsP photodiodes designed specifically for operation at the 1.3-μm wavelength are described. At a reverse bias of 10 V, the dark current of these diodes was as low as 15 pA. The peak responsivity at 1.3-μm wavelength was 0.7 A/W. An impulse response (full width at half maximum) of 60 ps and a 3-dB bandwidth of 5.5 GHz were achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336247
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  • 5
    Electronic Resource
    Electronic Resource
    Tensile tests of ropes of very long aligned multiwall carbon nanotubes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3152-3154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have directly measured the Young's modulus and tensile strength of multiwall carbon nanotubes by pulling very long (∼2 mm) aligned nanotube ropes with a specially designed stress-strain puller. This puller can apply an axial force to the rope and simultaneously measure the corresponding rope elongation and the change in rope resistance. The average Young's modulus and tensile strength obtained were 0.45±0.23 TPa and 1.72±0.64 GPa, respectively, which are lower than those calculated and measured previously. The factors that affect the mechanical strengths of nanotubes are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124094
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  • 6
    Electronic Resource
    Electronic Resource
    Application of superlattices to the investigation of resonant defect in GaAs layers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2256-2258 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A resonant electron irradiation-induced deep level SE0 in GaAs layers has been investigated by using 50–50 A(ring) uniformly Si-doped GaAs-Ga0.7Al0.3As superlattices and characterized by deep level transient spectroscopy. The formation of a miniband in superlattices changes the forbidden band gap and allows some resonant defects in bulk materials such as SE0 in GaAs to be detected. In these superlattices, three electron irradiation induced deep levels SE0, SE1, and SE2 located in GaAs layers have been observed. In bulk GaAs only two levels, E1 and E2, corresponding to SE1 and SE2 can be detected, since SE0 is a resonant level in bulk GaAs, situated 60 meV above the GaAs conduction band edge. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113184
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  • 7
    Electronic Resource
    Electronic Resource
    Determination of the sub-band energy in the V-shaped potential well of δ -doped GaAs by deep level transient spectroscopy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2425-2427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a V-shaped potential well induced by Si-δ doping in GaAs were determined. Self-consistent calculation gives four subbands in the well below the Fermi level. Experimentally, two DLTS peaks due to electron emission from these subbands were observed. Another two subbands with low electron concentration are believed to be merged into the adjacent DLTS peak. A good agreement between self-consistent calculation and experiment was obtained. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112695
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  • 8
    Electronic Resource
    Electronic Resource
    Outbreaks of an iridovirus in red drum, Sciaenops ocellata (L.), cultured in southern China (2002)
    Oxford, UK : Blackwell Science Ltd
    Journal of fish diseases 25 (2002), S. 0 
    Details
    ISSN: 1365-2761
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2761.2002.00419.x
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  • 9
    Electronic Resource
    Electronic Resource
    Monoclonal antibody against a major latex allergen reacts with latex products and ammoniated natural latex (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Allergy 50 (1995), S. 0 
    Details
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Spina bifida patients have been shown to be a high-risk group for latex allergy. Of the several latex proteins identified from nonammoniated natural latex, a polypeptide with a molecular mass of about 23 kDa was shown to be one of the major allergens reacting with IgE in the sera from such patients. Using hybridoma technology, a monoclonal antibody (mAb) 1E2 against the 23-kDa latex allergen was produced. The presence of the 23-kDa or related allergens in finished latex products was evaluated using 1E2. Of the 16 extracts of finished latex products, 12 reacted with 1E2. The other four products are not used in health care. Since the majority of latex products used in health care are manufactured from ammoniated latex and ammoniation may alter latex proteins, we also investigated the effect of ammoniation on the 23-kDa allergen. Although ammoniation degraded latex proteins, the 23-kDa antigen could still be detected by using mAb 1E2 on immunoblot of ammoniated latex proteins. Furthermore, ammoniation resulted in the appearance of additional proteins in high molecular weight positions not present in nonammoniated natural latex, which retained the 23-kDa epitope. The 23-kDa allergen could also be detected on surgical gloves after extensive washing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1398-9995.1995.tb01197.x
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  • 10
    Electronic Resource
    Electronic Resource
    Lamellar Thickness Distribution in Linear Polyethylene and Ethylene Copolymers (1994)
    s.l. : American Chemical Society
    Macromolecules 27 (1994), S. 6571-6576 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00100a048
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