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  • 1
    Digitale Medien
    Digitale Medien
    Heterozygosities and allelic frequencies of 358 dinucleotide-repeat marker loci in the Japanese population (1998)
    Springer
    Journal of human genetics 43 (1998), S. 165-168 
    Details
    ISSN: 1435-232X
    Schlagwort(e): Key words Microsatellite ; Heterozygosity ; Japanese ; population
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie , Medizin
    Notizen: Abstract We examined 64 normal Japanese chromosomes to determine the heterozygosities and allelic frequencies of 358 dinucleotide-repeat marker loci spanning the whole human genome. Comparisons of the data for each marker in the Japanese population sample with data for the same markers among Caucasian samples in the Genome Database (GDB) revealed a slightly lower average of heterozygosity in Japanese (71% vs 79%). Although the majority of the markers were as informative as in Caucasians, some in our sample were uninformative due to low heterozygosity; 38 loci revealed heterozygosities lower than 50% and 11 of these were less than 30%. Furthermore, allelic distributions at many of the marker loci were quite different in the two racial groups. Since such differences will influence statistical analyses between markers and disease loci, our data will be essential for linkage analyses, sib-ship pair analyses, and association studies involving the Japanese population. Therefore we have archived this database on a home page on the Internet (http://www.ims.u-tokyo.ac.jp/nakamura/Yamane.html).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s100380050062
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  • 2
    Digitale Medien
    Digitale Medien
    Open tube zinc diffusion into GaAs0.8P0.2 using AlN and SiNx cap films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2995-3002 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The open-tube diffusion of zinc in GaAs0.8P0.2 from a zinc-doped silica film was investigated in detail. Aluminum nitride (AlN) and silicon nitride (SiNx) films were used as the anneal caps. The dependence of diffusion depth on the thickness of an AlN-cap was found to differ from its dependence on SiNx-cap thickness. The selective masked diffusion of zinc using an AlN diffusion-mask was also systematically studied. The diffusion depth in selective masked diffusion was found to depend on both AlN-cap thickness and AlN-diffusion-mask thickness. The experimental results suggest that diffusion depth is not necessarily governed by either cap thickness or diffusion-mask thickness. From this standpoint, the role of film stress on diffusion depth was then quantitatively investigated. It was found that diffusion depth can be scaled well with total film stress in the measured film-thickness range. In this sense, it can be concluded that total film stress is the primary factor that determines the diffusion depth under the measured diffusion conditions. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362652
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  • 3
    Digitale Medien
    Digitale Medien
    Important factors included in nondestructive readout of GMR MRAM (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6642-6642 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We proposed a new type of magnetoresistive random access memory (MRAM) using a weakly coupled GMR effect. It operates on the general principle of storing a binary digit in hard component and sensing its remanent state by switching the soft component in such a way that the magnetic state of the hard component is unaltered. It is believed that this structure could have nondestructive readout (NDRO) characteristics. However, in experiments we found that NDRO was not always achieved; i.e., NDRO was dependent on the polarity of the excitation field. We take an example for mode "0'' (corresponding to a + remanent state). Although tests involving 3×108 plus excitation pulses indicated that the element was still stable, stability against minus disturb pulses could not be expected. The remanent state of 0 was degrading gradually and was finally destroyed after nenormous numbers of readout switching. An analytical model, in which the hard component follows the Rayleigh law, can explain the above phenomenon. It is because the irreversible magnetization processes cause disturbed states (0′ or 1′). Obviously the worst case for mode 0 is being excited by continous minus pulses whereas the worst case for mode 1 is being excited by continous plus pulses. We think that two methods will be effective to eliminate the unstability. One is to obtain a rectangular hysteresis loop for the hard component. The other is to imporve the excitation method, for example, to employ bipolar pulses for excitation signals. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362444
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  • 4
    Digitale Medien
    Digitale Medien
    Surface diffusion processes in molecular beam epitaxial growth of GaAs and AlAs as studied on GaAs (001)-(111)B facet structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4138-4144 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Mechanisms of molecular beam epitaxy have been investigated for GaAs and AlAs by growing and analyzing the shapes of facet structures consisting of an (001) top surface and two (111)B side surfaces. It is found that all of the Ga flux on the three facet planes is incorporated into the film, but the growth rates on (111)B and (001) depend strongly on the As flux and are mainly determined by the diffusion of Ga ad-atoms between the two planes. In contrast, the diffusion of Al is found to be almost negligible, irrespective of the As flux. By analyzing the shape of the facet, the diffusion length, λ, of Ga on a (001) surface is estimated to be about 1 μm at 580 °C, while that of Al is about 0.02 μm. On (111)B, λ of Ga is found to be several μms. The reflectivity of diffusing Ga atoms is found to be far less than 1 for the (001)-(111)B boundary, and almost unity at facet boundaries where the (111)B side surfaces are bound by the (11¯0) side walls.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357364
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  • 5
    Digitale Medien
    Digitale Medien
    Nb interaction with hydrogen plasma (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 760-766 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A niobium membrane was immersed in hydrogen plasma and could be electrically biased to vary the energy of bombarding ions in the range of 1–200 eV. The fluxes of plasma driven absorption and permeation were almost entirely governed by incident suprathermal neutrals (mostly, thermal atoms), whose energy does not depend on membrane bias, but the ions of controllable energy do affect the neutral-induced permeation through modifying the membrane surface. At the zero bias a high temperature-independent plasma driven permeation (superpermeation) was observed alongside of an enhanced absorption. Bombardment by ions of an energy higher than 50 eV resulted in a sharp decrease of the plasma driven permeation/retention and in an acceleration of boundary processes of absorption/reemission of thermal molecules. At ion energies below 50 eV, the effect of ion bombardment on the plasma driven permeation and the kinetic coefficients of boundary processes were nonmonotonic in ion energy, having a maximum at ∼10 eV. Both an in situ doping with O of the bulk of Nb and a membrane temperature increase reduced the effects of ion bombardment to their complete disappearance. Responsible for that was the replenishment by means of surface segregation of an oxygen monolayer sputtered by ion bombardment. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1331075
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  • 6
    Digitale Medien
    Digitale Medien
    A dusty double plasma device (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2345-2348 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A novel dusty plasma device to create spatially and temporally uniform steady state dusty plasma is described. An ultrasonic vibrator is used to vibrate a dust dispenser which disperses the dust uniformly through a fine mesh. A dusty plasma of large dimension with controllable dust density is produced. Measured dusty plasma parameters are compared with existing theories. Some experimental results related to propagation characteristics of dust-ion-acoustic waves in a dusty plasma column are presented. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1149761
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  • 7
    Digitale Medien
    Digitale Medien
    Initial long-pulse plasma heating at reduced power with negative-ion-based neutral beam injector in large helical device (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4260-4265 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: We have achieved long-pulse plasma heating using a negative-ion-based neutral beam injector (NBI) in the large helical device (LHD), where the confinement magnetic field is generated by only external superconducting coils. In the initial long-pulse experiments at lower power than that in short-pulse experiments, 80 keV–1.1 MW NBI heating lasted for 10 s with a little increase in the plasma density at the pulse end. Almost steady-state plasma heating was achieved for 21 s with 66 keV–0.6 MW NB injection. Plasma relaxation oscillation phenomena at a period of 1–2 s were also observed for 20 s. Above 1 keV plasma was easily sustained with a long-pulse NBI heating in LHD, without the current drive nor the disruption in tokamaks. Negative ion source operation was stable and the cooling water temperature rise of beam accelerator grids was nearly saturated with a temperature rise below 10 °C. For a higher power injection, the pulse duration is determined by the beam blocking, where the reionization loss is exponentially increased together with an increase in outgas in the injection port. The port conditioning by a careful repetition of injection is effective to the extension of the injection duration and the plasma maintenance duration. The initial long-pulse NBI heating at the reduced power has demonstrated an ability of steady-state operation in superconducting LHD. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1150063
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  • 8
    Digitale Medien
    Digitale Medien
    Effect of a Ti seed layer on the magnetic properties of CoCrTa double-layered perpendicular media (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6367-6369 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of a Ti seed layer on the magnetic properties and microstructure of Co77Cr19Ta4 was studied in Co77Cr19Ta4/Ti/M (M=Co91Zr3Nb6, Fe, Co) double-layered perpendicular recording media. A thin Ti film of ∼5 nm enhanced the c-axis alignment perpendicular to the film plane, resulting in a large perpendicular anisotropy Ku and the best magnetic properties under the present experimental conditions. The coercivity at this Ti thickness (3–3.7 kOe) was approximately half of the magnetocrystalline anisotropy field Hk estimated from the Ku value, even with the present thick 50 nm CoCrTa. The recording performance using a single-pole-type writing head showed that media with a 5 nm Ti layer had higher recording sensitivity compared to media without Ti layers, and a higher SN value at densities greater than 200 kFRPI. No significant loss of recording resolution due to the nonmagnetic Ti space between the CoCrTa and the back layers was observed by the use of the 5 nm Ti film. Moreover, the results for media with Fe back layers indicated that a thinner back layer with a high flux density can be used without any reduction of recording sensitivity and resolution. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.372708
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  • 9
    Digitale Medien
    Digitale Medien
    High frequency effects in perpendicular recording media (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4990-4992 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Simulations of perpendicular recording media were carried out to determine the effect of switching speed limitations upon recording performance. Simulations of hysteresis loops at various applied field sweep rates show that the onset of a switching speed limited increase in coercivity occurs for sweep rates in excess of 2×1013 Oe/s. Switching speeds of individual grains were found to be around 18 to 38 ps, depending on the medium thickness and the magnetization state of surrounding grains. Recording simulations show that for media thicknesses of up to 180 Å, writing frequencies of 5 Gbit/s are feasible before loss of output occurs. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.373225
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  • 10
    Digitale Medien
    Digitale Medien
    Optical activity in the vacancy ordered III2VI3 compound semiconductor (Ga0.3In0.7)2Se3 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3066-3068 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Great optical activity is realized by a vacancy ordered III2VI3 compound (Ga0.3In0.7)2Se3 with point group 6 which is based on wurtzite structure and characterized by the screw arrangement of cation atoms along the c axis. The transition of the fundamental absorption edge is direct and the band gap is estimated to be 2.05 eV. An anomalous optical rotatory dispersion around the absorption edge is observed and the maximum rotatory power of 125°/mm is obtained at λ=620 nm. The optical activity for red light is always above 60°/mm, that is 4–6 times as large as that of α quartz. (Ga0.3In0.7)2Se3 single crystal is very useful, especially for the He–Ne laser as an optically active substance; the rotatory power reaches 103°/mm, being more than 5 times of α quartz. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114866
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