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  • 1
    Electronic Resource
    Electronic Resource
    Luminescence and electron paramagnetic resonance studies of white-light emitting SrS: Pr, F thin film electroluminescent devices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1754-1757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fluorescence emission and excitation spectra of white-light emitting SrS: Pr, F thin film electroluminescent devices have been investigated. It was determined from the results obtained that the dominant electroluminescence mechanism was that the ionization of Pr3+ centers occurs first, then subsequently recombination with electrons occurs, and finally Pr3+ center transitions give rise to luminescence. The emission mechanism of SrS: Pr, F seems to be the same as that of a SrS: Pr, K electroluminescent device, except for the appearance of strong peaks around 610–670 nm. The impurity excitation peak in the lower excitation energy, longer-wavelength region in the FL spectrum may be an important factor for the selection of an effective white-light emitting EL material. The electron paramagnetic resonance experiment of SrS: Pr, F was performed on powder and thin film specimens. The hyperfine structure of an isolated Mn2+ ion was observed in this SrS: Pr, F thin film. This Mn center which was substituted for Sr, seems to contribute to the strong red emission in the white EL spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356366
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of an interlayer on the emission characteristics of a white-light-emitting electroluminescent device with a Pr and Ce doubly doped ZnS phosphor layer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8717-8724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated light-emission characteristics of a white-light-emitting electroluminescent device with a doubly doped ZnS:Pr,Ce,F phosphor layer. We found that optimum codoping of Ce enhances the emission characteristics compared to the electroluminescent device with a singly doped ZnS:Pr,F layer. We also found that introducing an additional thin-insulating SixNy interlayer between the lower insulating layer and the phosphor layer significantly stabilizes the aging characteristics and improves the luminous efficiency. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362498
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  • 3
    Electronic Resource
    Electronic Resource
    Electron-paramagnetic-resonance study of the Mn2+ luminescence center in ZnS:Mn powder and thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1004-1007 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The number of isolated Mn2+ ions and Mn2+ clusters in ZnS:Mn powder and thin films has been studied using Mn2+ spectra measured at room temperature with an X-band electron-paramagnetic-resonance spectrometer. While the concentration of the isolated Mn2+ ions decreases with increasing Mn concentration, the concentration of the clusters increases. At low Mn concentration, the Mn2+ ion substitutes for the Zn ion in ZnS:Mn in the cubic phase. At high Mn concentrations, where the ZnS powder has a dominant hexagonal phase, the Mn ion still prefers to substitute for Zn in ZnS:Mn at the cubic site rather than at the hexagonal site. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360886
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  • 4
    Electronic Resource
    Electronic Resource
    Decrease of the number of the isolated emission center Mn2+ in an aged ZnS:Mn electroluminescent device (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4253-4257 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed a decrease of the number of effective emission centers Mn2+ in the aged ZnS:Mn electroluminescence (EL) devices compared to the fresh EL devices using the electron-paramagnetic-resonance technique. Such phenomena can take place during the operation of the EL device, since the isolated Mn can easily diffuse into another site and forming cluster. Another possible explanation is that Mn2+ changes into Mn1+ or Mn3+ by transferring the electronic charge of the isolated Mn2+ to the neighboring Mn ions via sulfur and/or sulfur vacancy. As a result, luminance is lowered due to the decrease in the number of efficient emission centers of isolated Mn2+. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359887
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence investigation of the 1.356 eV band and stoichiometry in undoped GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 736-741 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of the 1.356 eV emission band measured by photoluminescence (PL) is investigated by correlating the Hall measurement data for the same materials. The crystals grown by the horizontal-Bridgman technique were As or Ga rich by controlling As-zone temperatures. Type conversion from n to p type with the thermal activation energy ΔE=0.133 eV and ΔE=0.05 eV were achieved by heat treatment of the As-rich crystals. The Ev +0.133 eV level and the 1.356 eV band may not be attributed to the same defect because the Ev +0.133 eV level is electrically active with a nonradiative center and the 1.356 eV band is radiative with an electrically inactive (neutral) center. Therefore, both Ev +0.133 eV level and the 1.356 eV band were not attributed to copper impurity because copper is electrically and optically an active center in GaAs. The 1.356 eV band measured by PL may be due to a gallium-vacancy related complex, but differs from VGa -donor complex.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343087
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  • 6
    Electronic Resource
    Electronic Resource
    Impact of surface properties on the dielectric breakdown for polycrystalline and multilayered BaTiO3 thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 6203-6208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric reliability for polycrystalline and multilayered BaTiO3 thin films has been evaluated using time-zero and time-dependent dielectric breakdown techniques. The histogram of dielectric breakdown for multilayered BaTiO3 thin films showed a typical Weibull distribution in contrast to a random distribution when compared with polycrystalline BaTiO3 thin films. The measurement resulted in that the 400 nm-thick multilayered BaTiO3 thin film sustained about 105 hour-long operation at 1 MV/cm, showing superior properties when compared with polycrystalline. The smaller leakage current level was obtained for a multilayered BaTiO3 film having a relatively thick underlayer of polycrystalline BaTiO3 film. The value of the breakdown field was smaller at the thicker multilayered BaTiO3 while the distribution of the breakdown widened for thicker film. Analysis of the roughness for the films confirmed that the field breakdown mechanism (e.g., lowering and spreading) is related to the surface roughness of the topmost layer which varies with the thickness of underlying polycrystalline BaTiO3. The reduced leakage current at the thick multilayered BaTiO3 was due to the presence of a wide transition layer between polycrystalline and amorphous BaTiO3. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366505
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  • 7
    Electronic Resource
    Electronic Resource
    Dielectric function of epitaxial ZnSe films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3364-3366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examine various ZnSe spectra to obtain that which best represents the dielectric response ε of ZnSe. The measured evolution of pseudodielectric function 〈ε〉 data with chemical etching shows that the natural overlayer on ZnSe can be modeled accurately only if we assume that it contains amorphous Se. Hence previous assumptions made in correcting 〈ε〉 mathematically are not correct, and data obtained on stripped samples yield the best representation of ε. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328098
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  • 8
    Electronic Resource
    Electronic Resource
    Enhancing defect-related photoluminescence by hot implantation into SiO2 layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 961-963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible photoluminescence around an orange band of 580 nm wavelength are observed from 300 nm thin SiO2 layers implanted by Si or Ge ions at both substrate temperatures of 25 °C [room temperature (RT)] and 400 °C (hot). Si implantations at an energy of 30 keV were performed with doses of 5×1015, 3×1016, and 1×1017 cm−2 while Ge implantations were done at 100 keV with a dose of 5×1015 cm−2. Samples implanted at 400 °C always show much higher intensities of luminescence than those implanted at room temperature. Electron spin resonance signals of the hot-implanted samples indicate relatively smaller amounts of nonradiative defects than those of RT-implanted samples. It is concluded that the hot-implantation effectively enhances the intensity of defect-related photoluminescence by reducing the density of the nonradiative defects and introducing the radiative defects, which contribute to the luminescence in SiO2 layers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123423
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  • 9
    Electronic Resource
    Electronic Resource
    PCR amplification and sequence analysis of irido-like virus infecting fish in Korea (2002)
    Oxford UK : Blackwell Science Ltd.
    Journal of fish diseases 25 (2002), S. 0 
    Details
    ISSN: 1365-2761
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2761.2002.00345.x
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  • 10
    Electronic Resource
    Electronic Resource
    Enhanced Subtilisin Production with Spore Mutants of Bacillus subtilis and Their Characterization (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 750 (1995), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1995.tb19994.x
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