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1

Digitale Medien

Simulation and analysis of silicon electro-optic modulators utilizing the carrier-dispersion effect and impact-ionization mechanism (1993)

Huang, H. C. ; Lo, T. C.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 74 (1993), S. 1521-1528

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A new type of Si guided-wave electro-optic modulator is proposed and analyzed. The modulator makes use of the impact-ionization mechanism for carrier generation, and the carrier-dispersion effect for electro-optic conversion. Both electrical and wave propagation properties of the modulator were examined by a two-dimensional device simulator and a three-dimensional waveguide simulator, respectively. Numerical estimates of phase modulation due to refractive-index change and intensity modulation due to optical absorption and radiation loss were obtained. One of important features of the prospected modulator is speed. The simulated turn-on and turn-off time of the modulator was less than 1 ns. GHz modulation is, therefore, possible for this class of modulators with device structure and doping profiles optimized for fiber coupling.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.354851

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2

Digitale Medien

A silicon diverging beam modulator fabricated by part of metal-oxide-silicon process modules (1992)

Huang, H. C. ; Yee, S. ; Darling, R. B. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 72 (1992), S. 791-793

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We hereby report a silicon diverging beam modulator fabricated by part of metal-oxide-silicon process modules. The particular feature of the fabrication is that a mode modulation technique is utilized. This technique changes intensity confinement of the propagation modes of a silicon partial waveguide such that an intensity modulation is achieved. Modulation indices of greater than 15% have been observed with a forward-bias current of 24 mA and a modulation length of 3 mm. By reducing the core width of the modulator, the modulation index can be further increased.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.351813

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3

Digitale Medien

Change in refractive index for p-type GaAs at λ=1.06, 1.3, and 1.55 μm due to free carriers (1991)

Huang, H. C. ; Yee, S.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 925-929

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A quantum-mechanical approach used to calculate the refractive-index change Δn due to free carriers for various doped p-type GaAs is presented. The approach makes use of a numerical Kramers–Kronig analysis to analyze a carrier-related optical-absorption spectrum in which various important carrier effects have been considered including the band-filling effect, the band-tailing effect, the band-gap-shrinkage effect, the direct optical transition of carriers between subvalence bands, and the indirect intravalence-band absorption due to phonons and impurities. Values of Δn have been obtained for various doping and carrier concentrations at wavelength λ=1.06, 1.3, and 1.55 μm. These Δn data are directly applicable to both the injection- and depletion-type optical-switching and modulation applications, and the optical-probing application. A comparison of various index-changing effects for GaAs at wavelength λ=1.06, 1.3, and 1.55 μm is also listed.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.349600

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4

Digitale Medien

The magneto-optical Kerr effect of bilayer films Nd-Fe/Cu and Nd-Fe/Al : 35th annual conference on magnetism and magnetic materials (1991)

Zhou, S. M. ; Lu, M. ; Zhai, H. R. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 5992-5993

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Bilayers Nd-Fe/Cu and Nd-Fe/Al made by vacuum evaporation were studied. The magneto-optical Kerr effect (MOKE) and reflectivity spectra were measured. For Nd-Fe/Cu with low Nd content and small thickness of Nd-Fe layer there is a peak in the MOKE spectrum and a broad MOKE enhancement. The position is located near the plasma edge of Cu. When the content of Nd exceeds 37 at. %, there is no Kerr peak in the MOKE spectrum of Nd-Fe/Cu. When the thickness of the magnetic layer is larger but still less than the light penetration depth, the position of the peak moves towards the long-wavelength side. For Nd-Fe/Al there is a broad enhancement in the short-wavelength region, but no Kerr peak occurs no matter how the magnetic layer changes. The results presented show that the necessary conditions for MOKE enhancement in bilayers are suitable values of n and k of the reflector, whether the reflector has a plasma edge or not, and the enhancement also depends on the properties of the magnetic layer.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.347788

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5

Digitale Medien

Catalytic oxidation of silicon by cesium ion bombardment (1991)

Souzis, A. E. ; Huang, H. ; Carr, W. E. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 452-458

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Results for room-temperature oxidation of silicon using cesium ion bombardment and low oxygen exposure are presented. Bombardment with cesium ions is shown to allow oxidation at O2 pressures orders of magnitude smaller than with noble gas ion bombardment. Oxide layers of up to 30 A(ring) in thickness are grown with beam energies ranging from 20–2000 eV, O2 pressures from 10−9 to 10−6 Torr, and total O2 exposures of 100 to 104 L. Results are shown to be consistent with models indicating that initial oxidation of silicon is via dissociative chemisorption of O2, and that the low work function of the cesium- and oxygen-coated silicon plays the primary role in promoting the oxidation process.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.347684

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6

Digitale Medien

The magneto-optical Kerr effect of bilayers Fe/Au-Cu and Fe/Ag-Au (1992)

Zhai, H. R. ; Zhou, S. M. ; Lu, M. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 1373-1375

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Bilayers Fe/Au-Cu and Fe/Ag-Au made by vacuum evaporation were studied. The magneto-optical polar Kerr rotation and reflectivity spectra were measured in the region from 400 to 700 nm. In the magneto-optical Kerr rotation spectra of bilayers Fe/Au-Cu and Fe/Ag-Au with the thickness of Fe layer less than the light penetration depth, there is a broad enhancement of the magneto-optical polar Kerr rotation with a Kerr peak near the plasma edge in the reflectivity spectra of Au-Cu and Ag-Au alloys. The peak shifts toward the long wavelength side with increasing Cu and Au content in Au-Cu and Ag-Au alloys, respectively. Our results show that the composition of the reflector in our bilayer structures can shift the wavelength range of the magneto-optical Kerr rotation enhancement. Interpretation and discussions are given.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.351256

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7

Digitale Medien

Characterization and minimization of flicker in silicon light valves (2001)

Huang, H. C. ; Cheng, P. W. ; Kwok, H. S.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 831-837

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have performed systematic characterizations of flicker in silicon light valves. It was found that there were four conduction mechanisms accounting for the flicker. These four mechanisms were residual dc charge on the silicon surface, voltage holding capability of the liquid crystal cell, voltage holding capability of the silicon panel, and parasitic capacitor coupling of the pixel. Major causes of these four mechanisms were identified. Solutions of flicker minimization were obtained for each mechanism. Among these solutions, offset of common voltage was found very useful to compensate for residual dc charge and parasitic capacitor coupling. Frame rate multiplication was found very useful for the minimization of flicker due to low voltage holding capabilities of the liquid crystal cell and silicon panel. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1331073

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8

Digitale Medien

Growth kinetics of SiO2 on (001) Si catalyzed by Cu3Si at elevated temperatures (2000)

Huang, H. Y. ; Chen, L. J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 1412-1417

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The oxidation of Si catalyzed by 170-nm-thick Cu3Si at elevated temperatures has been investigated by transmission electron microscopy, glancing angle x-ray diffraction, and Auger electron spectroscopy. For wet oxidation at 140–180 °C, the thickness of the oxide was found to increase parabolically with time with an activation energy of 0.4±0.2 eV. The activation energy is close to that of diffusivity of Cu in Si. At 180–200 °C, the growth rate became slower with increasing temperature. The growth of oxide tended to be discontinuous at the surface as the oxidation temperature was increased to a temperature at or higher than 300 °C. The anomalously fast growth of oxide at low temperatures is attributed to the presence of filamentary structures of Cu clusters in the oxide to expedite the diffusion of the oxidants through oxide. At 200–250 °C, more Cu atoms diffuse to the Cu3Si/Si interface and less Cu atoms stay in the oxide, which slows down the oxide growth. The lack of filamentary structures of Cu as diffusion paths retards the growth of SiO2. At 300 °C or higher temperatures, the lack of filamentary structures of Cu clusters stopped the growth of continuous oxide layer altogether. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.373832

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9

Digitale Medien

Monodomain configurations due to bias effect in NiO/NiFe microstructures (2000)

Wu, J. C. ; Huang, H. W.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 87 (2000), S. 4948-4950

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Magnetic domain configurations of microstructured permalloy exchange coupled by an antiferromagnetic (NiO) thin film is presented. NiO/NiFe bilayer micrometer array elements were fabricated using electron beam lithography through a lift-off technique. The magnetic force microscopy images of the elliptical and rectangular elements with various aspect ratios showed dipole-like magnetic domain structures. The bright/dark arc contrast associated with the magnetic pole strength was dependent on the anisotropic exchange field. Furthermore, the shape anisotropy can overwhelm anisotropic exchange in patterned elements with a high aspect ratio and thicker permalloy film. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.373211

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10

Digitale Medien

Effect of biquadratic exchange coupling on magnetoresistance and magnetization process in magnetic bilayer systems (1999)

Kuo, C. C. ; Lin, M.-T. ; Huang, H. L.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 85 (1999), S. 4430-4432

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: An improved model is proposed to deal with the magnetic bilayer systems taking into account the contribution of the anisotropy energy and biquadratic exchange coupling to elaborate on the evolution of the magnetoresistance (MR) ratio and magnetization process. The results indicate that the characteristic behavior of the MR ratio depends distinctly on both the biquadratic coupling constant and the layer thickness. The profile of the MR ratio was found to vary from an inverted bell shape to a concave pyramid with increasing biquadratic coupling strength, and decays sharply with the layer thickness. This model calculation helps us to provide a venue for further understanding the MR or giant magnetoresistance behavior of the magnetic multilayer system. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.370364

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