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  • 1
    Electronic Resource
    Electronic Resource
    Diffusion of both Ga and Bi into InSb seeds during growth of InGaSbBi (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 858-864 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In1−xGaxSb1−yBiy (0〈x≤0.21, 0〈y≤0.005) quaternary bulk single crystals were grown on InSb seed crystals using a rotary Bridgman method. In order to investigate the quality of these crystals, various kinds of measurements were carried out, such as optical microscope, x-ray topograph, four-crystal x-ray diffractometry, electron-probe microanalysis, energy-dispersive spectroscopy, and secondary-ion-mass spectroscopy. All grown crystals were 10 mm in diameter and more than 10 mm in length. This indicates that the rotary Bridgman method was useful to grow quaternary bulk single crystals. Owing to segregation, the compositional ratio of Bi (y) increased and that of Ga (x) decreased as crystals grew. During growth of InGaSbBi, both Ga and Bi diffused into the InSb seed and there appeared domains of InBi. For comparison, InSb1−yBiy (0〈y≤0.05) and In1−xGaxSb (0〈x≤0.16) were grown on InSb. It turned out that Bi did not diffuse into InSb without Ga, but Ga diffused without Bi. The incorporation of Ga produced the excess In and as a result InBi domains were formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357761
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  • 2
    Electronic Resource
    Electronic Resource
    ZnSe homoepitaxial layers grown at very low temperature by atmospheric pressure metalorganic vapor-phase epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2728-2733 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe homoepitaxial layers with high crystalline quality were grown on (100) ZnSe substrates (grown by the iodine vapor transport method) between 190 and 250 °C. The surface morphologies of homoepitaxial layers (homoepilayers) grown below 250 °C were all mirrorlike. The concentration of self-activated (SA) centers is related to the growth temperature. The band-edge photoluminescence (PL) intensity increases drastically with increasing temperature from 190 up to 210 °C, decreases above 210 °C, and the SA-PL intensity increases monotonically as the growth temperature increases. The mechanism of suppressing the occurrence of SA centers below 250 °C is assumed that the concentration of Zn vacancies diffused from the highly iodine-doped ZnSe substrates into the ZnSe homoepilayers reduces at this temperature region. The SA-PL intensity of the ZnSe homoepilayer with the strongest band-edge emission (grown at 210 °C) is the same or weaker than that of the best ZnSe heteroepitaxial layer (heteroepilayer). Below 200 °C, the FWHM of the ZnSe (400) diffraction is 14 arcsec which is the best value we have ever obtained, though the growth temperature seems to be too low to maintain the crystalline quality. The comparison on the crystalline quality with the ZnSe heteroepilayers is discussed in detail from the viewpoints of the epitaxial growth mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342760
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of light propagation in two-dimensional photonic crystal-based bent optical waveguides (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 855-858 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An observation of light propagation in a two-dimensional photonic crystal-based (2D–PC) optical waveguide is reported. Bent waveguides with a bending angle of 60° embedded in a 2D–PC triangular lattice with air columns were fabricated on a molecular-beam epitaxially grown AlGaAs/GaAs structure. The light-propagation characteristics were examined by observing scattered light from PC regions with incident light in the 850–950 nm range under an optical microscope using a charge coupled device camera. The incident light was strongly guided for wavelengths corresponding to the photonic band gap. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336517
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  • 4
    Electronic Resource
    Electronic Resource
    Joule heating generated by spin current through Josephson junctions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7505-7507 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We theoretically study the spin-polarized current flowing through a Josephson junction (JJ) in a spin injection device. When the spin-polarized current is injected from a ferromagnet in a superconductor (SC), the charge current is carried by the superconducting condensate (Cooper pairs), while the spin-up and spin-down currents flow in equal magnitude but in the opposite direction in a SC, because of no quasiparticle charge current in the SC. This indicates that not only the Josephson current but also the spin current flow across JJ at zero bias voltage, thereby generating Joule heating by the spin current. The result provides a new method for detecting the spin current by measuring Joule heating at JJ. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357860
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  • 5
    Electronic Resource
    Electronic Resource
    Ion channeling study of the lattice disorder in neutron irradiated GaP (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2352-2354 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice disorder in GaP produced by fast neutrons with a fluence of 2.1×1018 cm−2 has been investigated with 1.5 MeV 4He+ channeling. The slight increase in the 〈111〉 aligned yield for irradiated crystals indicates that each primary knock-on (PKO) produces approximately 7×102 displaced atoms. Channeling studies also show a spread distribution of randomly located defects imbedded in the lattice structure. On the other hand, P antisite (PGa) defects produced by neutron irradiation are ∼2 per PKO. Irradiated samples also show a volume expansion of 0.13%. It is suggested that the lattice expansion mainly induced by vacancy–interstitial clusters arises from the displacement atoms rather than PGa defects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371054
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  • 6
    Electronic Resource
    Electronic Resource
    Relation between the substitutional fraction and electrical activation of carbon in heavily C-ion implanted GaAs (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6926-6928 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nuclear reaction analysis (NRA), using the 12C(d,p)13C reaction, in conjunction with Rutherford backscattering spectrometry (RBS) in the channeling geometry was used to evaluate the substitutional fraction of C in (100)-oriented semi-insulating GaAs implanted with 12C ions to a dose of 5×1016 cm−2. The substitutional fraction of the implanted 12C evaluated by NRA was 19% in the samples annealed at 600 °C, whereas the electrical activation rate of the same sample was 2.1%, as measured by the van der Pauw method. It is suggested that a possible origin of this discrepancy is the compensating centers such as As vacancy (VAs) and/or VAs-CAs complex introduced in the annealing processes. This was supported by both the surface precipitation of As observed by Raman scattering and the enhancement of the surface peak in RBS-channeling yield which was measured by using a 1.5 MeV 4He+-ion beam. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370293
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  • 7
    Electronic Resource
    Electronic Resource
    Dynamics of concentration fluctuations for butylcellosolve in water (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 2718-2722 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The coexistence curve, the shear viscosity, and the angular and the spectral distribution of scattered light have been measured for butylcellosolve in water near its lower critical mixing point. We have examined the validity of the pseudospinodal concept for the interpretation of the diffusion coefficient near the critical point. The critical exponents obtained with the assumption of the pseudospinodal agree with the recent experimental and the theoretical values. The universal dynamic amplitude ratio R=1.03±0.06 obtained in the present work is in disagreement with the value R=1.2 calculated from the renormalization-group theory but in good agreement with R=1.03 of the prediction by Burstyn et al. The diffusion coefficient as a function of temperature and concentration is well represented in terms of a scaled function.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.448269
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  • 8
    Electronic Resource
    Electronic Resource
    Nonlinear optical property of CdTe microcrystallites doped glasses fabricated by laser evaporation method (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2953-2954 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Samples of CdTe microcrystallites doped glasses were fabricated by a high energy pulsed laser evaporation method. In order to fabricate a CdTe doped glass, synthesis of CdTe microcrystallites and formation of SiO2 films were carried out alternately on a fused silica glass substrate. The absorption edge of the CdTe doped glasses shifted to a higher energy region than that of the bulk CdTe due to the quantum size effect as the particle size of CdTe microcrystallites decreased. The third-order nonlinear susceptibility of χ(3) was estimated to be 4×10−7 esu at 580 nm using the method of degenerate four wave mixing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108028
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  • 9
    Electronic Resource
    Electronic Resource
    The Role of Glutamate in the Neurotoxic Effects of Methamphetamine (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 801 (1996), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1996.tb17452.x
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  • 10
    Electronic Resource
    Electronic Resource
    Functional metallomacrocycles and their polymers. 25. Kinetics and mechanism of the biomimetic oxidation of thiol by oxygen catalyzed by homogeneous polycarboxyphthalocyaninato metals (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 417-423 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100154a073
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