Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
64 (1988), S. 2959-2963
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Depth profiles and annealing behaviors of hydrogen implanted into titanium samples at an energy of 10 keV per nucleon were measured in the implantation temperature and fluence ranges of 77–400 K and of 6.3×1016–3.3×1018 H/cm2, respectively. Trapping enthalpies are deduced from the annealing curves. It was found that the trapping mechanism of hydrogen implanted into Ti depends on both the temperature and the fluence at the implantation. When implanted at a temperature sufficiently higher than 273 K, hydrogen moves from the surface layer to an underlying bulk and precipitates as hydride irrespective of fluence. On the other hand, at a temperature around or below 273 K, the implanted hydrogen atoms are trapped by the vacancies at a low concentration of hydrogen. However, hydride formation is realized where the local atomic ratio of H/Ti becomes close to the stoichiometric value of TiH2.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.341557
Permalink
Bibliothek |
Standort |
Signatur |
Band/Heft/Jahr |
Verfügbarkeit |