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  • 1
    Electronic Resource
    Electronic Resource
    Shielded MR head for high-density magnetic recording (invited) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4847-4850 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A narrow-gap shielded magnetoresistive (MR) head with a 8-μm track width has been constructed for high-density magnetic recording. The head consists of a pair of NiFe shields and a trilayered MR element between the shields. In the MR element NiFe, Ti, and amorphous CoZrMo films are used. The thickness of the three layers and the shields, as well as the shield gap length, are optimized with a one-dimensional self-consistent calculation. The shielded MR head has been fabricated using calculated thickness parameters for individual layers: 60 nm for CoZrMo with 40 nm NiFe and 20 nm Ti, 1-μm shields, and 0.5 μm for the total shield gap. The reproduced characteristics from the MR head are evaluated with a plated disk. Neither Barkhausen noise nor distortion is observed in the output waveform. The output voltage is 600 μVpp at a 4 mA/μm sense current with 30 kFCI transition density. The D50 transition density is 40 kFCI. These values are in good agreement with the calculated values. Assuming a 12-μm track pitch, crosstalk is −29 dB from off-track crosstalk characteristics. This shielded MR head has a potential to achieve high recording density with 40 kBPI and 2000 TPI for small-size disk drives.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344756
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  • 2
    Electronic Resource
    Electronic Resource
    Anisotropy of piezoresistance in n-channel inversion layers of metal-oxide-semiconductor transistors on (001)Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5687-5691 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallographic orientation dependence of piezoresistance of n-channel inversion layers in metal-oxide-semiconductor field-effect transistors on p-type (001)Si has been studied by using a diaphragm at room temperature. The experimental results have been compared with self-consistent calculations based on a surface quantization effect. The main feature of the crystallographic orientation dependence can be explained by an electron repopulation effect induced by applied strain and an effective mass anisotropy. It can be found that the difference between longitudinal and transverse piezoresistance in the devices nearly along the [110] directions is mainly due to an orthorhombic distortion of Si, and the shear deformation coefficients Xiu is determined to be 5.8 eV from comparing the experimental results with the calculated ones. An expression of the shear piezoresistance component π44 is also derived.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346984
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  • 3
    Electronic Resource
    Electronic Resource
    Electron-spin polarization in photoemission from thin AlxGa1−xAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5189-5192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The polarization of photoemitted electrons from thin AlxGa1−xAs layers grown by molecular-beam epitaxy has been studied as a function of Al concentration by varying x in steps of 0.05 from 0.0 to 0.15. As the fraction x is increased, the wavelength dependence of the polarization shifts toward shorter wavelengths, permitting wavelength tuning of the region of maximum polarization. A maximum electron polarization of 42%–43% is obtained for AlxGa1−xAs samples with x≥0.05 while the maximum polarization of GaAs (x=0) samples reaches 49%. To investigate the lower polarization of AlxGa1−xAs, additional samples have been studied, including a short-period superlattice (GaAs)7 - (AlAs)1 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353744
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  • 4
    Electronic Resource
    Electronic Resource
    Compensation centers in ZnSeTe (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5993-5999 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extended x-ray absorption fine structure (EXAFS), Rutherford-backscattering ion channeling, and particle induced x-ray emission channeling (PIXE/C) measurements have been performed in order to investigate compensation centers in Cl doped ZnSeTe. The EXAFS results from Cl doped ZnSeTe suggest that almost all Cl atoms are incorporated into substitutional Se lattice sites, which seems to indicate that Cl atoms themselves are not responsible for the compensation centers. The PIXE/C angular profiles were measured across the 〈100〉, 〈110〉, and 〈111〉 axes for undoped ZnSeTe. Comparing the angular profiles for Zn Kα, Se Kα, and Te Lα x-ray yields, it was found that some portion of the Te atoms (∼1020 cm−3) are located at tetrahedral interstitial sites. From these results, the difficulty of realizing n-type ZnSeTe is considered to be due to the existence of the interstitial Te atoms which act as acceptors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371645
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  • 5
    Electronic Resource
    Electronic Resource
    The low electric field conduction mechanism of silicon oxide-silicon nitride-silicon oxide interpoly-Si dielectrics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3912-3914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the leakage current of silicon oxide-silicon nitride-silicon oxide (ONO) dielectrics at low electric fields ((approximately-equal-to)2 MV/cm) was successfully developed. It is proposed that two transition mechanisms occur simultaneously. One is the detrapping of electrons from the silicon dangling bond in amorphous silicon nitride (SiN), which corresponds with the transition of dangling bonds among three possible charge states. The second is the direct tunneling of the detrapped electrons from the SiN to the gate through the thin silicon oxide. Both the location and the energy levels of the defect state are taken into account. The energy level, and the intrinsic time constant of the Si dangling bond and the uniform trap density in SiN, can be obtained by comparing the experimental results of the ONO discharge current with the calculated ones based on the above model. It can be found that the energy levels for negatively charged and neutral Si dangling bonds (E− and E0), with respect to the SiN conduction band, are 1.2 and 2.0 eV, respectively, the intrinsic time constants t− and t0 are 1.0×10−14 and 4.0×10−13 s, respectively, and the uniform trap density is 4.0×1019/cm3. From the energy level difference between E− and E0, we can conclude that the effective correlation energy of the Si dangling bonds in SiN is 0.8 eV, which is consistent with Robertson's results based on a tight binding calculation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359908
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  • 6
    Electronic Resource
    Electronic Resource
    Enhanced electron spin polarization in photoemission from thin GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1686-1688 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The polarization of photoemitted electrons from thin GaAs layers grown by molecular beam epitaxy has been measured. Polarization as high as 49% was observed for a 0.2-μm-thick GaAs sample at excitation photon wavelengths longer than 750 nm. The maximum polarization is dependent on the thickness of the GaAs layer, decreasing to about 41% for a 0.9-μm-thick GaAs sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102236
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  • 7
    Electronic Resource
    Electronic Resource
    CoZrMo amorphous films as a soft adjacent layer for biasing magnetoresistive elements with a current shunt layer (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4023-4025 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered Co94−xZr6Mox (4.4≤x≤17 at. %) films have been investigated as a soft-adjacent-layer (SAL) material for trilayered magnetoresistive (MR) sensors with a MR element layer, a current shunt layer, and a SAL for biasing layer. The saturation magnetization 4πMs linearly decreases from 14 to 3 kG with an increase in Mo content. The magnetic anisotropy field Hk decreases to a low value, equivalent to that for NiFe MR films, as the Mo content is increased. The magnetoresistance ratio Δρ/ρ is negative, but sufficiently small, namely one-hundredth of that for NiFe films, while the electrical resistivity ρ, about 140 μΩ cm, is 5.6 times greater than that for NiFe films. The films also have a small magnetostriction coefficient λs on the order of 10−7. A 500-A(ring)-thick CoZrMo film with 12 at. % Mo content is selected as the SAL, because a lesser thickness causes an extreme increase in Hk. Higher Mo content degrades the temperature characteristics of the magnetic properties, due to the lower Curie temperature. Trilayered MR-sensors, 100 μm in length and 10 μm in width, are fabricated with a 400-A(ring)-thick NiFe MR layer, a 400-A(ring)-thick Ti layer, and a SAL using this CoZrMo film. An excellent biasing level is achieved with a 15-mA sense current on the MR sensors. CoZrMo amorphous films have a superior capability as a SAL material, especially for the trilayered MR sensors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340537
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  • 8
    Electronic Resource
    Electronic Resource
    Detection of hot electron current with scanning hot electron microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2196-2198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning hot electron microscopy (SHEM) has been proposed as an experimental technique which allows for detection of hot electrons emitted from a subsurface semiconductor structure, thus making it possible to obtain the spatial distribution of hot electrons in a device. Here we present the experimental evidence of SHEM operation. Hot electrons with energies of 3 eV are injected by means of a Si/CaF2/Au heterostructure and subsequently detected at the tip of a scanning tunneling microscope in the SHEM configuration. The measured hot electron current was approximately 4 pA for a tunnel current of 5 nA. These results, although still of a preliminary nature, show the potential of SHEM as a technique suitable for the visualization of electron wave effects in semiconductor structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117163
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  • 9
    Electronic Resource
    Electronic Resource
    Formation and observation of 50 nm polarized domains in PbZr1−xTixO3 thin film using scanning probe microscope (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2358-2359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer size polarized domains were written in a PbZr1−xTixO3 (PZT) thin film using an atomic force microscope (AFM) and the relationship between the polarized domain and the grain of the film was investigated. The polarized domain was formed by applying a pulse voltage to the ferroelectric PZT thin film through a conductive AFM tip. The polarized domain structure was observed by imaging the piezoelectric-induced surface vibration by an AFM with an ac voltage applied between the tip and the bottom electrode of a sample. The polarized domains with a diameter of 50 nm were written within a single grain. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115857
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  • 10
    Electronic Resource
    Electronic Resource
    Growth and characterization of 10-nm-thick c-axis oriented epitaxial PbZr0.25Ti0.75O3 thin films on (100)Si substrate (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3524-3526 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 10-nm-thick PbZr0.25Ti0.75O3 thin film is epitaxially grown on a SrRuO3/BaTiO3/ZrO2/Si heterostructure substrate by reactive evaporation. Structural and electrical properties of the film are investigated. It is concluded that the film is ferroelectric and retains a native uniform upward polarization. Artificial downward polarization domains, whose average diameter is 24 nm, can be formed in the film. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122824
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