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  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 49 (1987), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Two [3H]ketanserin recognition sites are present in the rat striatum. The high-affinity site (Kd, 0.39 nM) is similar to the 5-hydroxytryptamine2 (5-HT2) site previously characterized by various investigators. The low-affinity site (Kd, 21.8 nM) has a unique pharmacologic specificity and is preferentially localized to rat striatum and septum. Conventional 5-HT2 antagonists as well as 5-HT and 5-HT uptake inhibitors are ineffective at inhibiting [3H]ketanserin binding to this low-affinity site. Also, chronic treatment with p-chlorophenylalanine, which depletes brain 5-HT, upregulates only the high-affinity site. Thus, in the striatum and septum, [3H]ketanserin labels a unique recognition site. This site has recently been shown to be associated with dopaminergic nerve endings and may regulate biogenic amine release.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7075-7079 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous oxide films with a composition of Bi2DyFe5O12 have been prepared by rf sputtering technique. The crystallization process was investigated using x-ray diffraction, differential thermal analysis, magnetic properties, magnetic resonance spectra, magneto-optical Faraday spectra, Raman spectra, and infrared reflection spectra. Amorphous oxide films exhibit very small magnetization and Faraday rotation at room temperature. At about 600 °C amorphous films crystallize to a garnet phase. With crystallization the magnetization and Faraday rotation increase rapidly. Raman and infrared spectra studies show the presence of tetrahedral sites in the amorphous films. As the annealing temperature increases, the peaks corresponding to octahedral and dodecahedral sites occur successively. It is of interest to note that amorphous oxide films containing Fe3+ ions show no magnetic resonance spectra at 71 and 300 K. The films annealed above crystallization temperature show a normal resonance spectrum. With increasing annealing temperature the linewidth decreases rapidly and the effective magnetization and anisotropy constant increase. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 4274-4282 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: State resolved characterization of nascent gas phase products is used as probe for the dynamics of an energetic surface reaction. This is achieved in the photodissociation of monolayer phosgene adsorbed on Ag(110). Irradiation of adsorbed Cl2CO in a broad photon energy range (hν=1.9–6.4 eV) leads to dissociation, with Cl retained on the surface and CO desorbing into the gas phase. The translational energy of product CO (g), 〈Etrans〉=0.26 eV, is independent of hν, even at the threshold photon energy (1.9 eV). This result establishes a dissociative electron attachment mechanism involving a reactive intermediate, ClCO, whose prompt dissociation serves as a probe to surface dissociation dynamics. Consistent with translation, internal state distribution of product CO (g) also shows an energetic origin: The rotational distribution, with an overall flux-weighted mean rotational energy of 〈Erot〉=0.17 eV, can be approximated by a bimodal Boltzmann distribution with rotational temperatures of 700 K at low J(s) and 7000 K at high J(s); the relative vibrational population is Nν=1/Nν=0=0.30. Contrary to common expectation based on quenching rates, both translational and rotational energies of CO (g) from monolayer photodissociation are much higher than those from the direct photodissociation in multilayers. This is taken as evidence for concerted reaction dynamics on the surface: The high exothermicity in the Cl–Ag bond formation on the surface exerts part of the energy to the Cl–CO coordinate, leading to higher energies in CO (g). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 7895-7903 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Understanding photochemistry and energy transfer mechanisms in molecular solid films is of interest to many scientific issues, ranging from matrix-assisted laser desorption ionization mass spectrometry to photochemical processes on polar stratospheric cloud particles. We present a study of a model system: the photochemistry (hν=1.2–6.4 eV) of a molecular Cl2CO solid film at low laser power density, 10 μJ–1 mJ/cm2 for ∼10 ns pulses. At hν≥3.5 eV, photon absorption by Cl2CO leads to a major photodissociation channel resulting in CO (g) and Cl (g) and a minor molecular Cl2CO ejection channel. Both photodissociation and molecular ejection are observed at the lowest laser power density and their yields depend linearly on pulse energy. This result establishes a single photon photoexcitation mechanism. The electronically excited Cl2CO in the surface region of the solid film can either dissociate or convert its electronic energy to translational motion in Cl2CO. The translational energy distribution of CO (g) from the photodissociation channel is bimodal: the flux-weighted mean translational energy of the fast channel is photon energy dependent (〈Etrans〉=210, 135, and ∼90 meV at hν=6.4, 5.0, and 3.5 eV, respectively), while the slow channel is independent of photon energy and corresponds to completely thermalized CO molecules (〈Etrans/2k〉=84±3 K). The mean translational energy of photoejected Cl2CO is 〈Etrans〉=220±20 meV. In addition to photoejection, there is also a distinctively different thermal desorption channel due to transient laser heating. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 1728-1733 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-intensity pulsed ion source of TEMP-type series, operating in bipolar mode, has been developed as a unique pulsed energy source to produce a high-intensity pulsed ion beam (HIPIB) for surface modification of materials. To generate the ion beam, a specially shaped bipolar pulse, consisting of a first negative pulse and a second delayed positive pulse both of nanosecond width, is formed by a double coaxial pulse-forming line (PFL) powered with a Marx generator and supplied to a magnetically insulated ion diode (MID) by a self-magnetic field. It is found that the efficient generation of a HIPIB is mainly dependent on the delay time of the bipolar pulse, adjusted by pressure ratio in the two gas switches of a PFL, and the anode–cathode (A–K) gap distance in the self-magnetic field MID. The delay time determines the effective area on the anode surface for plasma generation and the A–K gap distance ensures the stability of the process. A proper delay time and a proper A–K gap distance are obtained by a series of experimental investigations. Under delay time from 30 to 280 ns and several different A–K gap distances, the typical wave forms of the bipolar pulses at a dc charging voltage of 45 kV to Marx generator are illustrated to clarify the effects of delay time and A–K gap distance on the ion beam generation. The proper A–K gap distance is not uniform, varied from 6 to 8 mm, and the corresponding proper delay time is 250 ns. The most efficient plasma generation leads to a maximum output of HIPIB with a peak ion current density of 350 A cm−2 and a beam pulse width of 75 ns (full width at half maximum), at an accelerating pulse of 220 kV with a pulse width of 100 ns. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2295-2301 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocations in gallium arsenide (GaAs) crystals are generated by excessive thermal stresses induced during the crystal growth process. The presence of dislocations has adverse effects on the performance and reliability of the GaAs-based devices. It is well known that dislocation density can be significantly reduced by doping impurity atoms into a GaAs crystal during its growth process. A viscoplastic constitutive equation that couples the microscopic dislocation density with the macroscopic plastic deformation is employed in a crystallographic finite element model for calculating the dislocation density generated in the GaAs crystal during its growth process. The dislocation density is considered as an internal state variable and the drag stress caused by doping impurity is included in this constitutive equation. A GaAs crystal grown by the vertical Bridgman process is adopted as an example to study the influences of doping impurity and growth orientation on dislocation generation. The calculated results show that doping impurity can significantly reduce the dislocation density generated in the crystal. The level of reduction is also influenced by the growth orientation during the crystal growth process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2338-2342 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on a simplified analysis of perfectly conducting metals, it has been suggested qualitatively that establishing metal-semiconductor interfaces at the heterojunctions of polar semiconductor quantum wells introduces a set of boundary conditions that dramatically reduces or eliminates unwanted carrier energy loss caused by interactions with interface longitudinal-optical (LO) phonon modes. In this article, it is theoretically demonstrated that comparable reductions in LO phonon scattering strengths may be achieved for metal-semiconductor structures with metal having realistic conductivities and Thomas–Fermi screening lengths.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2983-2985 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7−δ thin films with Tc=89.5 K were deposited on MgLaAl11O19 (11¯0) substrates by pulsed laser deposition. X-ray diffraction patterns indicate that the YBa2Cu3O7−δ films were epitaxial films, with the c axis perpendicular to the substrate surfaces. Microstrip resonators of YBa2Cu3O7−δ thin films deposited on MgLaAl11O19 substrates were fabricated. The loaded quality factor of the resonator was 1007 at 77 K and 4.28 GHz. As a new substrate for high Tc oxide superconducting films, MgLaAl11O19 substrates are especially suitable for superconducting-microwave applications.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3795-3797 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyzed the Raman spectra and x-ray diffraction of two GaAs/Al0.3Ga0.7As superlattices grown by molecular-beam epitaxy on a 4 ° misoriented (001) GaAs substrate and an exactly (001)-oriented GaAs substrate respectively. From the frequency shifts of the longitudinal-optical- (LO) confined phonons in the Raman spectra and the variation in linewidths of both the LO-confined phonons and the satellite peaks in x-ray diffraction, we found that the 4 ° misorientation of the GaAs substrate from (001) toward [110] direction improves the interface quality of the superlattices.
    Type of Medium: Electronic Resource
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