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  • 1
    Book
    Book
    Research Review 1993 (1994)
    Details
    Title: Research Review 1993
    Contributer: Fichtner, W. , Huang, Q. , Kaeslin, H. , Felber, N. , Aemmer, D. , ETH Zürich/Integrated Systems Laboratory , ETH Zürich/Microelectronics Design Center
    Year of publication: 1994
    Pages: 103 S.
    Type of Medium: Book
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  • 2
    Electronic Resource
    Electronic Resource
    Deep donor levels in Sn-doped AlxGa1−xAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5952-5956 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of the Sn-doped AlxGa1−xAs alloys with various compositions have been studied by deep level transient spectroscopy and photocapacitance methods. Two deep donor levels with the thermal activation energies of 0.19 and 0.32 eV are found in all of the samples. Detailed data for the thermal emission and capture activation energies, optical ionization energies, and their composition dependence are given for the first time. Because their electronic properties are similar to that of the typical Si DX level in AlxGa1−xAs, it is concluded that both Sn-related levels are the DX-like levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350445
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of Fe doping on high field magnetoresistance and low field magnetoresistance at zero field in polycrystalline La0.7Sr0.3Mn1−xFexO3 (x=0–0.12) thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7410-7412 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline La0.7Sr0.3Mn1−xFexO3 thin films, with x=0–0.12, have been prepared on (001)-Si substrates using pulsed laser deposition. The films consist of fine grains with an average size of 60–80 nm. For those films, the metal–insulator transition temperature, Tp, is much lower than the Curie temperature, TC. The high field magnetoresistance, HFMR, is nearly temperature independent for x〈0.08, whereas the extrapolated low field magnetoresistance at zero field, LFMR*, decreases rapidly with increasing temperature. Moreover, Fe doping significantly decreases LFMR* and enhances HFMR at low temperatures. We propose that for the Fe-doped films, both the reduced spin polarization of conduction electrons and the increased spin-flip scattering are responsible for the decrease of LFMR*, while the weakened ferromagnetic spin interaction at the grain boundaries is responsible for the enhanced HFMR. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1358344
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  • 4
    Electronic Resource
    Electronic Resource
    Enhanced magnetoresistance in Ag-doped granular La2/3Sr1/3MnO3 thin films prepared by dual-beam pulsed-laser deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7428-7430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report our investigations on the doping effect metallic Ag on the intergrain magnetoresistance phenomenon. La2/3Sr1/3MnO3 (LSMO) thin films with Ag doping were prepared on (001) LaAlO3 at different substrate temperatures (Ts) by the dual-beam pulsed-laser deposition technique. Grown at Ts=750 °C, the films are perfectly epitaxial with their c axis perpendicular to the film surface. Ag dopant cannot substitute into the LSMO lattice, thus showing no obvious effect on the magnetotransport properties of the film, though it did impair the film in-plane epitaxy and improve the intergrain diffusion of the lattice atoms. However, grown at lower Ts(400 °C), the films are granular with c-axis texture. The Ag dopant exists at GBs and helps to increase the local Mn spin disorder at GBs and the phase interfaces, thus enhancing the eMR value by a factor of 2 compared with the undoped film. Experiment data also suggest that the transport mechanism underlying the Ag-doping enhanced eMR is spin-dependent scattering. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362660
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  • 5
    Electronic Resource
    Electronic Resource
    Evolution of mosaic structure in Si0.7Ge0.3 epilayers grown on Si(001) substrates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1292-1297 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report a study of mosaic structures in partially relaxed Si0.7Ge0.3 epilayers grown on Si(001) substrates by x-ray double- and triple-axis diffractometry. The samples have different layer thicknesses and hence different degrees of strain relaxation. Our results show that, at early stages of strain relaxation, the films contain mosaic regions laterally separated by perfect regions. This is because the mosaic structure caused by a misfit dislocation is effectively localized in a lateral range of the layer thickness. Therefore, far from the dislocations, the film is virtually a perfect crystal. With the increase in the degree of strain relaxation, and consequently in the dislocation density, the mosaic regions of the layer expand while the perfect regions shrink and finally vanish completely. Moreover, our results indicate that the conventional method of estimating dislocation density from the x-ray rocking curve width fails in our case. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370884
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of Fe doping on the magnetotransport properties in Nd0.67Sr0.33MnO3 manganese oxides (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 789-793 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed magnetic and transport measurements on a series of Nd0.67Sr0.33Mn1−xFexO3 polycrystalline compounds with x=0.0, 0.05, 0.10, and 0.15. For the Fe-undoped Nd0.67Sr0.33MnO3 (NSMO) materials, a magnetoresistance (MR) as high as ∼33% was observed at the metal–insulator transition temperature, Tp=273 K, in a magnetic field of 10 kOe. Fe substitution in Mn sites leads to a reduction in Tp and an increase in the overall MR. A 10% Fe contribution increases the MR up to about 65% and lowers Tp to 88 K. The calculated magnetic moment at 5 K and an applied field at 9 T for the parent NSMO is 4.21 μB and decreases continuously with an increasing amount of iron added. It was found that with the same amount of Fe doping, the Curie temperature, TC, decreases much faster in the Nd-based system than in the corresponding La-based system. The enhanced colossal magnetoresistance and the suppression of ferromagnetism observed in this compound can be interpreted as due to the weakening of the double exchange mechanism by Fe3+ ions, which causes the localization of the hopping electrons. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421044
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of metal-containing carbon films using Raman scattering (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4520-4525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-containing carbon (Me-C:H) films were deposited using the electron cyclotron resonance chemical vapor deposition technique in conjunction with a metal screen-grid system. Four sets of Me-C:H films were analyzed using Raman scattering. Two sets were molybdenum-containing carbon (Mo-C:H) films deposited at fixed dc bias (at different CH4/Ar ratios), and at fixed CH4/Ar ratio (at different dc bias). Another two sets of nickel-containing carbon (Ni-C:H) films were deposited at fixed rf power, but at a different CH4/Ar ratio, with and without postgrowth thermal annealing at 200 °C. All films showed the characteristic G and D peaks except for those with high metal content. The D peak is very pronounced in the Ni-C:H films, and both the G and D peaks follow an opposite trend; downshifting and upshifting in wave number, respectively, as the CH4/Ar ratio was increased. In the case of Mo-C:H films deposited at fixed dc bias, both peaks downshifted in wave number, following an increase in the CH4/Ar ratio. The G peak full width at half maximum for both the Ni- and Mo-C:H films increased slightly with an increase in CH4/Ar ratio, consistent with the variation in the relative integrated intensity of the D to G peak (ID/IG). Thermal annealing experiments conducted on the film samples revealed relatively stable characteristics with a minor effect on the film structure. The results showed that the impinging ion energy plays an important role in the structural properties of the Me-C:H films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402969
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  • 8
    Electronic Resource
    Electronic Resource
    Comparative study on the effects of ion density and ion energy on diamond-like carbon deposited by electron cyclotron resonance chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4830-4835 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond-like carbon films were deposited using electron cyclotron resonance (ECR) chemical vapor deposition incorporated with a screen grid under different dc bias voltages to compare the effect of ion density and ion energy on the film properties. Langmuir probe measurements and optical emission spectroscopy were used to characterize the ECR plasma, while the films were characterized using Raman and infrared (IR) spectroscopies, hardness, and optical gap measurements. The plasma measurements showed that the ion density, hydrogen atom density, and CH density decreased monotonously following increase in the dc bias voltage. Raman spectra and optical gap measurements indicate the films became more graphitic with lower content of sp3-hybridized carbon atoms as the dc bias voltage was increased. An increase in hydrogen content was found in films prepared at relatively high dc bias voltage, as indicated by IR measurements. Films deposited at −150 V exhibit maximum hardness. The results show the ion density has a stronger effect on the film deposition rate and hydrogen content, while the ion energy affects the film properties more predominantly by changing the bonding structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359163
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  • 9
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy of molybdenum-containing carbon films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4871-4875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results from x-ray photoelectron spectroscopy (XPS) measurements of molybdenum-containing carbon films (Mo–C:H) deposited using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system are reported in this article. The Mo–C:H films were deposited using a technique with two Mo screen grids incorporated inside the ECR-CVD chamber. The versatility of this technique arises from the ability to control the degree of plasma ionization, sputtering rate of the metal grids, and energy of the impinging ions. Variation of the (CH4/Ar) gas flow ratio results in a change of the Mo fraction within the range of 0.32–15.11 at. %. For large amounts of Mo, the C 1s peak was split into four components with binding energies of 283.05, 284.67, 286.22, and 288.17 eV. These were identified as carbidic (metallic), polymeric, and oxidic (single- and double-bond) carbon, respectively. The presence of oxygen was detected in the films, due possibly to free-radical absorption at the film surface during deposition, or oxidation of the metallic Mo at the surface upon exposure to atmosphere. The results showed that the ECR-CVD technique is useful and effective for the deposition of Mo–C:H films with low- and high-Mo content. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371454
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  • 10
    Electronic Resource
    Electronic Resource
    Resonant photorefractive AlGaAs/GaAs multiple quantum wells grown by molecular beam epitaxy at low temperature (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7404-7406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resonant photorefractive devices using low temperature AlGaAs/GaAs multiple-quantum-well structures in a parallel field geometry are demonstrated. The samples are semi-insulating as grown. The AsGa-related defects incorporated into the samples during low temperature growth provide the required deep centers. No proton implantation, Cr doping, or annealing is needed for device fabrication. In the photorefractive wave mixing experiment, an output diffraction efficiency higher than 0.84% and a two-wave-mixing gain of more than 3000 cm−1 are obtained under a dc electric field of 15 kV/cm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361423
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