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  • Artikel: DFG Deutsche Nationallizenzen  (194)
  • 1
    Digitale Medien
    Digitale Medien
    A partial-wave analysis of the Kππ system produced in the reaction K^-p -〉 K^0π^+π^-n at 8.25 GeV/c
    Amsterdam : Elsevier
    Nuclear Physics, Section B 202 (1982), S. 21-42 
    Details
    ISSN: 0550-3213
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0550-3213(82)90219-X
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  • 2
    Digitale Medien
    Digitale Medien
    Raman scattering from PbTiO3 thin films prepared on silicon substrates by radio frequency sputtering and thermal treatment (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 394-399 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Raman scattering has been carried out on PbTiO3 thin films prepared on platinum-coated (100) silicon by radio-frequency (rf)-magnetron sputtering without substrate heating and a post-deposition thermal treatment. The Raman spectra obtained from the thin film are characteristic of powder Raman spectra: In comparison with the single crystal spectra, the intensity of the background is relatively high at low frequencies and the Raman lines are broad. The lattice phonon modes corresponding to the observed lines are identified by comparison with the data on single crystals and powder. The Raman frequencies for the thin film remarkably shift to low frequencies compared with single-crystal data. It is shown that the phenomenon of the frequency shifts is similar with the hydrostatic pressure effect on single crystals of PbTiO3. The result indicates that the thin films are composed of grains that are stressed depending on the grain size by neighboring grains of different orientations when they are split up into ferroelectric domains at the paraelectric-to-ferroelectric transition. This stress effect is significant even for a grain size of ∼0.5 μm. It is found that the lowest frequency E transverse optical (TO) mode in the thin film shows softening with increasing temperature as was reported in previous studies on single crystals.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353862
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  • 3
    Digitale Medien
    Digitale Medien
    Photoemission spectromicroscopy: A new insight in the chemistry of SnOx films for gas sensors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3997-4003 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We used the novel experimental technique of photoemission spectromicroscopy to investigate the active area of SnOx thin films for gas sensors, deposited by dc sputtering. First, we analyzed the degree of oxidation and the homogeneity of as-deposited films in a high lateral resolution (30 μm) spectromicroscopy mode with an energy resolution of 0.4 eV. This led to a surprising discovery of a large amount of tin monoxide on the film surface. Then we studied the interaction of H2 and H2O with the surface of polycrystalline SnO2 films used as sensitive layers in actual gas sensor devices. These results have been related to the resistivity changes of the corresponding devices: we found that such changes are primarily due to a reduction process in the film rather than to mere chemisorption.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352865
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  • 4
    Digitale Medien
    Digitale Medien
    Raman scattering study of lead zirconate titanate thin films prepared on silicon substrates by radio frequency magnetron sputtering (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6625-6631 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Raman scattering is used to characterize thin films of PbTi1−xZrxO3. The films have been prepared on platinum-coated (100) silicon by radio-frequency (rf)-magnetron sputtering without substrate heating followed by a post-deposition annealing at 600–650 °C. As the concentration of Zr is increased, the Raman peaks broaden and their intensities decrease more rapidly compared with bulk ceramic or powder samples, while the background intensity increases. The observations show that the crystal structure of the films is locally deformed and significantly disordered. With increasing x, the soft E(TO) mode shifts to lower frequencies. An additional Raman peak appears besides the phonon peaks expected in a perfect crystal. The soft mode strongly couples with the extra mode, similarly with the case of ceramic samples. The results are related to features of the thin films such as a frustrated phase transition, i.e., smaller differences between the lattice parameters a and c in comparison with powder data, and an electrical behavior showing a diffuse ferroelectric-to-paraelectric transition with a broad peak.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355103
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  • 5
    Digitale Medien
    Digitale Medien
    Electronic structure of anatase TiO2 oxide (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2945-2951 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoemission spectromicroscopy was used to investigate the electronic structure of TiO2 anatase single crystals and polycrystalline thin films. The stoichiometry and the degree of oxidation of as-grown crystals, as-deposited films, as well as of thermally annealed samples in different atmospheres, were analyzed, based on the Ti 2p and O 1s core levels, with an energy resolution of 0.4 eV. The experimental density of states (DOS) was found to be in agreement with the theoretical DOS reported in the literature for anatase crystals, and shows some characteristics similar to the experimental DOS reported for rutile crystals. In reduced samples, the experimental DOS is characterized by intense emission in the region of O 2p bonding orbitals, and does not exhibit an appreciable density of states in the band gap. As-grown crystals exhibit small band gap emission (a few percent of the valence band VB signal) at about 0.8 eV, which is attributed to Ti3+ (3d) defect states. Annealing the crystals at high temperatures in O2 or subsequent thermal reduction in an Ar–H2 mixture (95%–5%) produces nearly stoichiometric surfaces with smaller or undetectable density of Ti3+ states. In addition, some redistribution of the spectral weight is observed in the VB spectra.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356190
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  • 6
    Digitale Medien
    Digitale Medien
    Electrical and optical properties of TiO2 anatase thin films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2042-2047 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electrical and optical spectroscopic studies of TiO2 anatase thin films deposited by sputtering show that the metastable phase anatase differs in electronic properties from the well-known, stable phase rutile. Resistivity and Hall-effect measurements reveal an insulator–metal transition in a donor band in anatase thin films with high donor concentrations. Such a transition is not observed in rutile thin films with similar donor concentrations. This indicates a larger effective Bohr radius of donor electrons in anatase than in rutile, which in turn suggests a smaller electron effective mass in anatase. The smaller effective mass in anatase is consistent with the high mobility, bandlike conduction observed in anatase crystals. It is also responsible for the very shallow donor energies in anatase. Luminescence of self-trapped excitons is observed in anatase thin films, which implies a strong lattice relaxation and a small exciton bandwidth in anatase. Optical absorption and photoconductivity spectra show that anatase thin films have a wider optical absorption gap than rutile thin films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356306
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  • 7
    Digitale Medien
    Digitale Medien
    Chemical bonding and electronic structure in binary VNy and ternary T1−xVxNy nitrides (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1396-1402 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Core-level binding energies (BEs) and valence-band structures of VNy and Ti1−xVxNy films (0≤x≤1, 0.4≤y≤1.1), deposited by rf magnetron sputtering, have been investigated by x-ray photoemission spectroscopy. The core level BEs and valence-band spectra are discussed in relation to the microhardness (Knoop microindentation). The binding energy values and the shape of the core level peaks are representative of the chemical bonding between the elements, and are thus related to the microhardness. Comparison of the experimental spectra with various theoretical density of states calculations as a function of x and y shows evidence of the influence of nitrogen vacancies and of the vanadium content on the mechanical properties. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.366843
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  • 8
    Digitale Medien
    Digitale Medien
    Evidence for surface chemical reactions between gold and BiCaSrCuO (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 979-981 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We explored the reactivity of gold on cleaved 2212 BiCaSrCuO by synchrotron-radiation photoemission spectroscopy. We found no evidence for reactivity when the substrate was at room temperature, similar to what has been reported for very low temperatures (20 K). At intermediate temperatures (100 K), however, clear evidence was found of a chemical reaction with formation of a localized nonmetallic phase. These findings have potentially important implications for the manufacturing of devices based on BiCaSrCuO.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.106320
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  • 9
    Digitale Medien
    Digitale Medien
    MoS2 as microtubes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 351-353 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on the existence of MoS2 hollowed microtubes, several mm in lengths and less than 0.1 μm wall thickness, grown from the vapor phase. Scanning electron microscopy studies reveal that instability of thin weakly bonded sheets against folding causes the tube growth directly or indirectly beyond the formation of turbulent gas flow. Electron diffraction of a single tube wall proves a parallel growth mode of successive layers while the crystal lattices of both tube walls are mutually rotated. A spiral growth mode is proposed. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118057
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  • 10
    Digitale Medien
    Digitale Medien
    Oxidation resistance of protective coatings studied by spectroscopic ellipsometry (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3194-3196 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Spectroscopic ellipsometry is applied to determine the oxidation resistance of TiN and CrN coatings. This technique proves to provide accurate measurements of the oxide layer thickness in a convenient, fast, and nondestructive manner. The magnetron-sputtered thin films were heated in air in the temperature range between 673 and 925 K. The verification with scanning electron microscopy and x-ray reflectometry shows an excellent agreement between these complementary techniques. The rate constant k of the oxidation is directly related to the film morphology in TiN thin films. While understoichiometric films with a dense fine-grained structure exhibit a moderate k of 4 nm2/s at 773 K, overstoichiometric films with a pronounced columnar structure oxidized over seven times faster. The nonstoichiometry in TiNy and CrNy leads to a reduced activation energy for oxidation compared to stoichiometric compounds. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.126626
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