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  • 1
    Buch
    Buch
    Studies in operating systems; 13 (1976)
    London u.a. :Academic Press,
    Details
    Titel: Studies in operating systems; 13
    Autor: McKeag, R.M.
    Beteiligte Person(en): Wilson, R. , Huxtable, D.H.R.
    Verlag: London u.a. :Academic Press,
    Erscheinungsjahr: 1976
    Seiten: 263 S.
    Serie: A.P.I.C. studies in data processing 13
    Materialart: Buch
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    Zuse-Institut Berlin get availability status
  • 2
    Digitale Medien
    Digitale Medien
    Activation modeling of Si implanted GaAs (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1131-1134 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The total concentration of ionized impurities in silicon implanted GaAs was estimated from carrier concentration and mobility values obtained by Hall effect measurements together with published compensations. We have demonstrated that the calculated profiles (ND++NA−) are in good agreement with that of the silicon atomic distributions obtained by secondary-ion-mass spectroscopy. We have observed that a large concentration of gallium vacancies are injected into the sample during a 900 °C anneal for 1000 s using a Si3N4 cap. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363858
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  • 3
    Digitale Medien
    Digitale Medien
    On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6349-6354 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Shallow and deep centers were studied by means of temperature dependent Hall effect and photoluminescence (PL) measurements in two sets of undoped n-AlGaN samples grown by organometallic vapor phase epitaxy. The samples of these two series were grown under different conditions and had, as a result, electron concentrations differing by several orders of magnitude. The composition dependence of ionization energies of dominant donors in these two sets of samples is very different indicating that different types of centers are involved, but in both cases they are most probably related to some native defects. These defects behave as hydrogen-like donors for low Al compositions and become increasingly deeper with increasing Al content. The shallow-deep transition occurs at about x=0.2 in the low conductivity AlxGa1−xN series and at about x=0.5 for the high conductivity series. Several PL bands were detected in AlGaN and it is shown that the band at 3.05 eV is due to a radiative transition between deep donors in the upper part of the band gap and holes in the valence band or on shallow acceptors. For the yellow luminescence band at 2.25 eV it is demonstrated that this band consists of two overlapping bands and that the dominant band is due to a transition between the native donors and a carbon-related deep center. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363653
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  • 4
    Digitale Medien
    Digitale Medien
    Diffusion of boron, lithium, oxygen, hydrogen, and nitrogen in type IIa natural diamond (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5103-5106 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Diffusion of boron, lithium, nitrogen, oxygen, and hydrogen into type IIa natural diamond was studied. The diffusion was performed in two steps. First, diffusion of Li and oxygen was performed in nitrogen atmosphere at 860 °C for one hour. The sample was then placed in a hot filament chemical vapor deposition (CVD) growth reactor and diffusion was performed for two hours in hydrogen atmosphere from a boron solid source placed on the surface of the sample. The condition of diffusion were those used routinely during CVD growth. After diffusion, the concentration of Li was of the order of 2×1016 cm−3 at the depth of 0.5 micrometer, and oxygen, nitrogen, and boron were found to be in the range (1–4)×1020 cm−3 at the same depth. The diffusion of hydrogen under conditions specific to CVD growth has also been studied for the first time and was found to be quite strong. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359320
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  • 5
    Digitale Medien
    Digitale Medien
    Forced diffusion of impurities in natural diamond and polycrystalline diamond films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5625-5629 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A method is proposed for the determination of the state of an impurity (donor, acceptor, or deep level) in semiconductor lattice. To demonstrate the method boron was diffused into type Ia natural diamond under a dc electric field. The concentration and diffusion profiles of boron were affected by the applied field. Boron diffuses as a negative ion since it is an acceptor shallow enough to be partially ionized at the temperature of diffusion. The drift velocity of boron ions at the temperature of diffusion was also estimated. The diffusion of lithium and oxygen from a Li2CO3 source in chemical vapor deposited diamond films was performed under bias at 1000 °C in an argon atmosphere. After diffusion, the concentrations of Li, O, and H in the diamond films were found to be around (3–4)×1019 cm−3. No dependence of these concentrations on the applied bias was observed. It was found that the diffusion of Li goes primarily through grain boundaries, which may explain why it does not depend on the applied voltage. Fluorine was present as an impurity in the dopant source. Its concentration in the films was around (1–2)×1017 cm−3 and did depend on the applied bias, indicating that fluorine may have formed a shallow level in the diamond band gap. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359204
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  • 6
    Digitale Medien
    Digitale Medien
    Hydrogen passivation effects in InGaAlP and InGaP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7390-7398 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of hydrogen treatment on electrical properties, luminescence spectra, and deep traps in InGaAlP and InGaP have been studied. It is shown that acceptors and donors (both shallow and deep) can be effectively passivated by hydrogen. The hydrogen is found not only to passivate the main electron and hole traps in our samples, but also to generate electron traps in n-InGaAlP and hole traps in p-InGaP. The influence of hydrogen treatment mode (direct plasma or a crossed-beams source in which the low-energy ion bombardment of the surface is effectively eliminated) on hydrogen concentration and hydrogen profiles in InGaAlP are discussed. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357964
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  • 7
    Digitale Medien
    Digitale Medien
    STRIKE FREQUENCY AND INDUSTRIAL WAGE DIFFERENTIALS: AN ECONOMETRIC STUDY OF BRITISH PRODUCTION INDUSTRIES (1980)
    Oxford, UK : Blackwell Publishing Ltd
    Bulletin of economic research 32 (1980), S. 0 
    Details
    ISSN: 1467-8586
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Wirtschaftswissenschaften
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1467-8586.1980.tb00158.x
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  • 8
    Digitale Medien
    Digitale Medien
    SOME EVIDENCE ON THE PRODUCTIVITY OF QUALIFIED MANPOWER IN BRITAIN: A NOTE (1978)
    Oxford, UK : Blackwell Publishing Ltd
    Bulletin of economic research 30 (1978), S. 0 
    Details
    ISSN: 1467-8586
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Wirtschaftswissenschaften
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1467-8586.1978.tb00422.x
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  • 9
    Digitale Medien
    Digitale Medien
    Culture in the context of intercultural negotiation. (2000)
    Oxford, UK : Blackwell Publishing Ltd
    Human communication research 26 (2000), S. 0 
    Details
    ISSN: 1468-2958
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medien- und Kommunikationswissenschaften, Kommunikationsdesign
    Notizen: This study explores culture's effect on behaviors and outcomes in intercultural negotiation and examines how those effects are moderated by role. Eighty U.S. and international students took part in a previously developed negotiation task (Pruitt, 1981) and completed Hui and Triandis's (1986) individualism-collectivism (INDCOL) scale. Negotiation interactions were coded for information sharing, offers, and distributive tactics. Findings show that a negotiation dyad's collectivism is positively associated with higher joint profit. The effects of culture on both communication behaviors and joint outcomes, however, differ by role of the negotiator. In particular, seller collectivism has larger and more consistent effects on communication behavior and joint profit than buyer collectivism. Results support a ‘culture in context’ perspective of negotiation that takes into account negotiator qualities, contextual and structural features of the negotiation, and mediating processes in addition to cultural values.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1468-2958.2000.tb00770.x
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  • 10
    Digitale Medien
    Digitale Medien
    Bladder drainage for caesarean section under epidural analgesia (1986)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 93 (1986), S. 0 
    Details
    ISSN: 1471-0528
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Summary. Fifty patients undergoing elective caesarean section under epidural analgesia were randomized prospectively to be catheterized with an ‘in-out’ or an indwelling urethral catheter. Of the patients who had catheterization for the time of surgery alone 44% subsequently required recatheterization, whereas all patients with indwelling catheters voided spontaneously on their removal. The frequency of significant bacteriuria was the same in both groups.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1471-0528.1986.tb07808.x
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