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  • 1
    Electronic Resource
    Electronic Resource
    Comparative study of properties between a-GeC:H and a-SiC:H films prepared by radio-frequency reactive sputtering in methane (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3949-3954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous germanium–carbon (a-GeC:H) and silicon–carbon (a-SiC:H) films were deposited by reactive magnetron sputtering of Ge and Si targets in a methane argon gas mixture. The effect of rf power on the structural, optical, and electrical properties of the films was investigated. The carbon content in a-SiC:H films is larger than in a-GeC:H for the same deposition condition, and it decreases with increasing rf power. The intensity of the carbon-related bonds, the optical band gap, and the activation energy of dc conductivity of both films decreases with decreasing carbon content. The temperature dependence of dc conductivity of a-SiC:H exhibits activated-type conduction, whereas hopping conduction is predominant in a-GeC:H. Hydrogen concentration and H bonding ratio are examined, indicating that the termination of the dangling bond by hydrogen is more effective in a a-SiC:H films than a-GeC:H films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359915
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  • 2
    Electronic Resource
    Electronic Resource
    Mobilities of He+, Ne+, Ar+, and Kr+ in He gas at 4.35 K (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 5726-5734 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Mobilities of He+, Ne+, Ar+, and Kr+ have been measured in He gas at 4.35 K. An injected-ion drift tube which can be cooled by liquid helium was used. It has a Wien filter on the ion injection line and a quadrupole mass filter on the detection line so that mass identification is explicitly made. Ions are injected into the drift tube with 20 eV, and it is assured that the thermalization of ions is completed well before reaching the gate for mobility measurement. The correction for thermal transpiration in the pressure measurement was made by Takaishi–Sensui's empirical formula. The reduced mobility K was measured against E/N, where E is the electric field strength and N is the gas number density. Then the E/N was converted to the effective temperature Teff by Wannier's formula. The K(Teff) obtained are compared with the previous experimental and theoretical results, some of which are given in K0(Tg), where K0 is the zero field mobility and Tg is the gas temperature. The agreement between the present results and the previous experimental results is generally good at high temperature where they are available. Recommended numerical values are presented.The present work confirms the findings in the preliminary report by Kojima et al. that the K of He+ in He has a maximum around E/N=5 Td which corresponds to Teff=18 K, and it decreases steeply below that temperature. An apprehension that the structure might be caused by clustering is discussed and denied. The maximum found in K of He+ in He is considered to be the structure predicted theoretically as a result of orbiting resonance scattering. The Ks obtained for Ne+, Ar+, and Kr+ have a typical shape of mobilities in heterogeneous gas. They have a maximum around Teff=500–1000 K and become more or less flat below 50 K. From the maximum position the well depths of the interaction potentials are estimated and compared with theoretical calculations. There is a shallow minimum of K between 50 and 100 K for Ar+ and Kr+. The Ks at the flat are a few percent larger than the polarization limit Kpol. Below Teff=6 K, Ks tend to decrease steeply. This steep decrease of K is also suggested to be an orbiting resonance scattering effect although no theoretical calculation is available.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.467138
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  • 3
    Electronic Resource
    Electronic Resource
    Anisotropy dispersion and its influence on magneto-optical effect in rare-earth transition-metal amorphous films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3691-3695 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic anisotropy dispersion in sputter-deposited rare-earth transition-metal amorphous films is measured by the methods of Hall hysteresis loops and torque magnetometry. The inhomogeneity in the orientation of the easy axes of magnetization is found to be rather large; the mean inclination angle of the axes from film normal is 16.5° in a Gd–Tb–Fe film. Results show a clear correspondence between the anisotropy dispersion and Kerr rotation angle, and both depend on the bias voltage applied to the substrates during sputtering. Anisotropy dispersion is an important property for evaluating the amorphous magnetic films for magneto-optical storage application.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337577
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  • 4
    Electronic Resource
    Electronic Resource
    Preparation of a-SiC:H/a-GeC:H superlattices by dual magnetron sputtering (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3114-3116 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous semiconductor superlattices composed of hydrogenated amorphous silicon carbon alloys and germanium carbon alloys have been prepared by a dual magnetron sputtering method. A small-angle x-ray diffraction measurement has indicated that the superlattices consist of well-defined smooth layers. Optical band gap has been examined for a series of samples; the thickness of the germanium carbon layer was changed from 20 to 130 A(ring), while the thickness of the silicon carbon layer was kept constant at 60 A(ring). The optical band gap increases upon decreasing the thickness of the germanium carbon layer, indicating quantum size effects due to the formation of superlattice structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344144
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  • 5
    Electronic Resource
    Electronic Resource
    Improvement of photoconductivity of a-SiC:H films by introducing nitrogen during magnetron sputtering process (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1518-1521 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen has been introduced in the preparation of hydrogenated amorphous silicon carbon alloy films by magnetron sputtering of silicon in a methane-argon gas mixture. The partial pressure of nitrogen was changed, and its effects on the structural, optical, electrical, and optoelectronic properties of the deposited films were investigated. The SiN bond becomes predominant with increasing partial pressure of nitrogen pN above 10%, at which the optical band gap is rapidly increased. The concentration of silicon and carbon in the films remained almost unchanged by changing pN up to 20%. It was found that the photoconductivity is also almost unchanged up to 20%, while the optical band gap is increased. This indicates that the photoconductivity is improved over a wider optical band gap, as compared with previous studies when the optical band gap was changed by changing deposition conditions but without introducing nitrogen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347242
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  • 6
    Electronic Resource
    Electronic Resource
    Spatially resolved photoluminescence spectroscopy of lateral p-n junctions prepared by Si-doped GaAs using a photon scanning tunneling microscope (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2191-2193 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An accurate correspondence between the local optical responses and the structures of semiconductor light-emitting devices is demonstrated by using an illumination-mode photon scanning tunneling microscope with noncontact atomic force microscope technique. We study the novel-structured lateral p-n junctions grown on patterned GaAs(111)A substrate. Measuring the spatially resolved photoluminescence spectra with a 200 nm apertured probe, we precisely determine the position and the width of the transition region of p-n junctions. The illumination-collection hybrid mode is also employed to map the two-dimensional emission efficiency with higher resolution, which is not affected by carrier diffusion. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115099
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  • 7
    Electronic Resource
    Electronic Resource
    Soft x-ray transmission characteristics of an Au-coated silica hollow-core fiber (abstract) : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2250-2250 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Since the real part of the refractive index of silica glass is smaller than unity in the soft x-ray region, it has been shown1–3 that silica-glass hollow-core fibers can transmit soft x rays. However, the transmittance for the silica fibers bent over a 90° were found to be lower than 0.1%. On the other hand, the multilayer metal coating technique has been developed in fabrication of flat mirrors for soft x-ray optics. If suitable multilayers can be deposited on the inner surface of a flexible hollow glass fiber, the transmittance for soft x rays of the fiber is expected to be considerably higher than that of noncoated hollow fibers. It is important to study the transmission characteristics of the hollow-core fiber whose inner surface is coated with metal. In the present study, we report the soft x-ray transmission characteristics of a Au-coated silica hollow-core fiber. The experimental setup is similar to that previously reported.4 The inner diameter of the Au-coated silica fiber used is about 2 mm and its length is 230 mm. The Au coating on the inner surface of the fiber was achieved by chemical plating. We measured the transmittances of the Au-coated silica fiber and a noncoated silica fiber with the same size. We measured the transmittance only for the bend angles smaller than 20°, because these relatively thick silica fibers were broken at about 25°. For a large bend angle (20°), the transmittances of the Au-coated fiber were one order of magnitude lower than that of the noncoated fiber in the short wavelength region below 45 A(ring). In the long wavelength region (longer than 60 A(ring)), the transmittance of the Au-coated fiber was higher than that of the noncoated fiber. At the oxygen K-shell absorption wavelength (23 A(ring)), the strong dip in transmission was observed in the noncoated silica fiber. However, there was not seen a strong dip in the Au-coated fiber. These results, the better transmittance for the long wavelengths, and no dip at 23 A(ring), show that the Au coating is effective in improving the soft x-ray reflectance in the inner surface of fibers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140783
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of gallium doping on the properties of amorphous-SiC:H films prepared by magnetron cosputtering (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2067-2071 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiC:H films have been doped with gallium. The films were prepared by magnetron cosputtering of silicon and gallium in an atmosphere of Ar and CH4. The effects of gallium concentration (z) on the structural, optical, electrical, and optoelectronic properties of the films were investigated. Doping at even very low Ga concentrations below Z=10−3 results in a reduction of both the dark and the photoconductivity, which were found to be decreased by more than two orders of magnitude, and the activation energy of the dark conductivity is increased by about 30%. An increase of z up to 10−2 leads to further reduction of the photoconductivity without any significant change of its activation energy, while the dark conductivity slightly increases and the corresponding activation energy drops to about 50% of its value observed for z〈10−3. The optical band gap remains unchanged at such low Ga concentrations. These results indicate that the n-type conduction of the undoped film confirmed by a thermoelectric power experiment is compensated by the gallium doping; the type of conduction shifts from n to weak p with increasing z. At higher Ga concentrations z〉10−2, infrared absorption measurements indicate a strong reduction of the H concentration in the films, which was taken as evidence for a distortion of the amorphous network by excessively incorporated Ga atoms, which suppress the attachment of H to dangling Si bonds. In this fluence regime the optical band gap shrinks by about a factor of 2 and the photoconductivity becomes quenched, while the dark conductivity increases by about six orders of magnitude. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366939
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  • 9
    Electronic Resource
    Electronic Resource
    Photoconductive properties of nanometer-sized Si dot multilayers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2255-2257 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-sized Si dot multilayers have been prepared by repeating a sequence of low-pressure chemical vapor deposition for dot formation and thermal oxidation for dot isolation. For the multilayer with Si dots in the range of 3–5 nm, the onset of photoconductivity is observable at a photon energy of 2 eV, corresponding to the optical absorption edge of the Si dots. This result indicates that the nanometer-sized Si dot multilayers are promising as photoconductors that work at various wavelengths because the optical band gap can be varied by controlling the dot size. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1408600
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  • 10
    Electronic Resource
    Electronic Resource
    Tailoring a high-transmission fiber probe for photon scanning tunneling microscope (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2612-2614 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission efficiency of a fiber probe used in photon scanning tunneling microscope is evaluated as a function of aperture diameter. The apertured probe has been fabricated by chemical etching technique and metal coating. By comparing two types of probes with different cone angles, we determine the most influential factor in the transmission property of the metal-cladding tapered waveguide. A long tip with high efficiency is developed by a multistep etching method so as to be suitable during actual scanning operation. Photoluminescence imaging of lateral p-n junctions on the GaAs substrate is demonstrated in the illumination-collection hybrid mode operation of photon scanning tunneling microscope. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116198
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