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  • 1
    Digitale Medien
    Digitale Medien
    Transient picosecond/subpicosecond Raman scattering studies of nonequilibrium electron distributions and phonons in CdTe (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3840-3843 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Nonequilibrium electron distributions and phonons in CdTe have been studied by transient picosecond/subpicosecond Raman spectroscopy at T=300 K. Our experimental results show that for photoexcited electron–hole density of n(approximately-equal-to)1018 cm−3, the electron distributions can be reasonably well described by Fermi–Dirac distribution functions with effective electron temperature substantially higher than the lattice temperature. From an ensemble Monte Carlo analysis of the nonequilibrium phonon population as a function of photoexcited electron–hole pair density, the LO phonon lifetime in CdTe has been deduced to be τ(approximately-equal-to)0.75±0.25 ps. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363338
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  • 2
    Digitale Medien
    Digitale Medien
    Strain-induced shift in photoluminescence energy in In0.2Ga0.8As/GaAs quantum wires (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4031-4034 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Quantum, wires, ranging in width from 900 to 42 nm, were patterned onto a 10-nm-thick In0.2Ga0.8As quantum well in GaAs cladding then regrown by migration-enhanced epitaxy. Atomic-resolution transmission electron microscopy images of two of the quantum wires, one 400 nm wide and the other 42 nm wide, show lattice deformation of the quantum wires due to compression by the cladding. The lattice constant in the growth direction varies with horizontal position inside each wire, from largest in the wire center to smallest at the sidewalls. In the 400 nm wire, the lattice constant in the growth direction fully reaches the pseudomorphically strained value of 5.83 A(ring) at a distance of 165 A(ring) from the sidewall, while the lattice constant in the 42 nm wire reaches only 5.79 A(ring), at 75 A(ring) from the sidewall. From the value of the compressed lattice constant in the center of the 42 nm wire, the amount of strain in the center of the wire is inferred and, from this strain, the expected strain-induced band-gap energy shift is calculated. Photoluminescence measurements are made on the wires, showing a strain-induced increase in peak emission energy with decreasing wire size. That this energy shift is strain induced is verified by comparing it to the far smaller energy shift of an unregrown but, otherwise, identical sample, which has no regrowth-induced compressive strain. For the 42 nm quantum wire, after the calculated contribution due to increased quantum confinement is accounted for, the energy shift measured by photoluminescence is consistent with the calculated value to within the experimental error. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359926
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  • 3
    Digitale Medien
    Digitale Medien
    Phonon scattering suppression in short periodic AlAs/GaAs multiple-quantum-well structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3491-3499 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The suppression of longitudinally polarized optical-phonon (LOP) electron scattering in multiple quantum wells (MQWs) was sought in short periodic AlAs/GaAs with well widths of 12, 15, and 20 monolayers and AlAs barrier widths of 2 and 4 monolayers, based on a study of electron mobility in the plane of the MQW. Two-dimensional electron-gas structures with MQWs of up to eight wells in their channel were grown. Their mobilities at room temperature were slightly reduced, as compared to samples without MQW channel, due to interaction with interface polaritons from AlAs barriers, while mobility at temperatures 〈50 K improved due to reduction of remote ionized impurity scattering. The theoretical analysis of the results based on the model of hybridon-electron interaction in an infinite superlattice is presented. The reduction of room-temperature mobility in the MQWs is believed to be caused by the interaction of electrons with both barrier interface-polariton (IP) -like modes and the well LOP-IP hybrids. An alternative explanation of the results of a similar experiment done elsewhere is offered denying the evidence of strong suppression of LOP scattering there.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356111
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  • 4
    Digitale Medien
    Digitale Medien
    Electrometer preamplifier for scanning tunneling microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2652-2653 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: An optimized current preamplifier, consisting of a shunt resistor followed by a high speed field-effect transistor input instrumentation amplifier, appears suitable for use in scanning tunneling microscopy. The preamplifier has a transimpedance of 100 MΩ, a measured 3 dB bandwidth of 200 kHz, low phase distortion, and excellent noise performance. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1147185
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  • 5
    Digitale Medien
    Digitale Medien
    Microstructure of heteroepitaxial CdTe grown on misoriented Si(001) substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1591-1593 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Transmission electron microscopy has been used to characterize the microstructure of heteroepitaxial CdTe (111) layers grown by molecular beam epitaxy directly on nominal and misoriented Si(001) substrates. High-resolution electron micrographs showing atomic-scale details of the CdTe (111)/Si(001) interface have been recorded. Layer quality depended on the substrate tilt parameters, including the offcut orientation angle θ, and the azimuthal angle φ relative to [110]. Small φ values (4° and 10°) gave high densities of stacking fault twins throughout the epilayer whereas larger misorientation angles led to a rapid falloff away from the substrate. Under optimized growth conditions, the occurrence of twins effectively dropped to zero within a distance of less than 2.5 μm from the substrate surface. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114949
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  • 6
    Digitale Medien
    Digitale Medien
    Investigation of the evolution of single domain (111)B CdTe films by molecular beam epitaxy on miscut (001)Si substrate (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4292-4299 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A comprehensive view of the microstructure of (111)B CdTe films grown on miscut (001)Si substrates by molecular beam epitaxy has been obtained by transmission electron microscopy and scanning transmission electron microscopy. It is found that in the initial growth stage, CdTe nucleates with a dominance of one particular domain: a domain with (111)B polarity and orientation of [11−2]CdTe//[1−10]Si, although there are also some other domains of different polarity and orientation. The dominance of one type domain is due to the reduction of the surface symmetry by using the miscut substrate and by using optimum growth conditions. As the growth proceeds, a single-crystal film is produced by the dominating domain overgrowing the minority domains nucleated at the film–substrate interface. This results in the final film of single-crystal character having (111)B polarity with [11−2]CdTe along [1−10]Si. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.368647
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  • 7
    Digitale Medien
    Digitale Medien
    High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1810-1812 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We describe the growth of high quality CdTe(211)B layers by molecular beam epitaxy on nominal Si(211) substrates. Prior to CdTe deposition, thin ZnTe(211)B buffer layers were grown to preserve the homo-orientation. Large-area CdTe(211)B layers were routinely obtained by optimizing the growth parameters. From x-ray diffraction, we observed the presence of twin-free CdTe(211)B layers. One 8 μm thick CdTe epilayer had a near-surface etch pit density of 1.5×105 cm−2, which surpassed the best value reported for CdTe(211)B grown on GaAs(211)B, GaAs/Si(211), or Si(211) substrates. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119406
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  • 8
    Digitale Medien
    Digitale Medien
    Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2086-2088 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The microstructure of heteroepitaxial CdTe (001) and ZnTe(001) epilayers grown on Ge(001) buffer layers by molecular beam epitaxy has been characterized using electron microscopy. Apart from occasional {111} stacking faults originating at the interfacial region, the prevailing defects present in both systems are identified by high-resolution imaging as perfect Lomer edge dislocations with Burgers vectors of the type a/2〈110〉 parallel to the interface plane, which are indicative of well-relaxed material. Double-crystal rocking-curve measurements using Ge(001) buffer layers give full-width-at-half-maximum values of 210 arc-sec for a 7.5μm thick ZnTe film and 125 arc-sec for a 12μm thick CdTe film. Use of the Ge buffer layers on Si(001) substrates represents a valuable precursor for eventual growth of mercury cadmium telluride since this allows the substrate orientation to be maintained. The buffer layer also permits a substantial reduction of the in situ annealing temperature needed for substrate oxide removal. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116888
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  • 9
    Digitale Medien
    Digitale Medien
    Analysis of forensic samples using precolumn derivatization with (+)-1-(9-fluorenyl)ethyl chloroformate and liquid chromatography with fluorimetric detection
    Amsterdam : Elsevier
    Journal of Chromatography A 672 (1994), S. 135-140 
    Details
    ISSN: 0021-9673
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0021-9673(94)80601-2
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  • 10
    Digitale Medien
    Digitale Medien
    Fabrication and characterization of InGaAs/GaAs strained quantum wires grown by molecular beam epitaxy
    Amsterdam : Elsevier
    Journal of Crystal Growth 134 (1993), S. 162-166 
    Details
    ISSN: 0022-0248
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Chemie und Pharmazie , Geologie und Paläontologie , Physik
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(93)90122-D
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