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1

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Magnetic anisotropy and interlayer exchange coupling in the sputtered Co/Ag multilayers (1995)

Feng, J. W. ; Kang, S. S. ; Pan, F. M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 5549-5553

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The in-plane uniaxial anisotropy and perpendicular anisotropy of sputtered Co/Ag(111) multilayers have been investigated by magnetic measurements and the in-plane ferromagnetic resonance (FMR) technique. The data-fitting analysis for the FMR experimental results about the angular dependence of the resonance field shows that the in-plane anisotropy cannot be fully described by only using the first-order term, and the second-order term must be included. Furthermore, the interface-induced anisotropy has been obtained by FMR. Both ferromagnetic and antiferromagnetic couplings have been revealed by hysteresis loop measurement. Specifically, a spin-flip phase transition has been observed in the sputtered Co/Ag(111) multilayers, which is attributed to the effects of the AF-coupling and in-plane uniaxial anisotropy. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.359675

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2

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Optical characterization of GaN films by photoreflectance and photocurrent measurement (1995)

Qin, L. H. ; Zheng, Y. D. ; Feng, D. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 7424-7426

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We report on the room temperature optical characterization of single crystal hexagonal GaN films on (0001) sapphire grown by metalorganic chemical vapor deposition. The energy gap of GaN was determined to be 3.400 eV by photoreflectance and the possible origin of the photoreflectance signal is discussed. Photocurrent measurement exhibited a peak at 3.351 eV and a continued photoresponse through the ultraviolet region. We found that the intensity of photocurrent was dependent upon the chopper frequency in the measurement. Absorption coefficient and film thickness were obtained from the optical transmission spectra. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360400

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3

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The role of an electric field applied during pulsed laser deposition of LiNbO3 and LiTaO3 on the film orientation (1996)

Hu, W. S. ; Liu, Z. G. ; Feng, D.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 7089-7093

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A low electric field applied during film deposition has a significant influence on the orientation of ferroelectric thin films prepared by pulsed laser deposition. C-axis oriented growth of LiNbO3 films was demonstrated on fused silica with the aid of a low bias voltage Vb=0–120 V, and complete c-axis orientation was achieved at Vb=110 V. In contrast, the electric field cannot induce c-axis orientation of LiTaO3 films. Theoretical analysis suggests that the electrostatic energy provides an extra driving force for the c-axis oriented growth of the ferroelectric films if the permittivity components satisfy ε33/ε11≤2, as in LiNbO3 film, but not if ε33/ε11〉2 at the deposition temperature, as in LiTaO3 film. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.363720

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4

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Phonon mode study of Si nanocrystals using micro-Raman spectroscopy (1995)

Xia, Hua ; He, Y. L. ; Wang, L. C. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 6705-6708

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: First-order Raman spectra of hydrogenated nanocrystalline silicon (nc:Si:H) films show unexpected features in their optical vibrational modes for crystallites with sizes ranging from 2 to 6 nm. Two size-dependent spectral regions, one with the stronger intensity peaking at 505–509 cm−1 and another a shoulder-like band between 512 and 517 cm−1, are clearly identified using a detailed line-shape analysis and the strong phonon confinement model. The strong size dependence of the relative integrated intensities of the two bands suggests that the modification of the vibrational spectra can be attributed to an effect induced by the atomic vibrations from the near-surface region of the nanocrystals. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360494

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5

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Structural characterization of Ta/Al multilayer films (1989)

Jiang, S. S. ; Hu, A. ; Chen, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 5258-5260

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Ta/Al multilayer films with modulation wavelength 4.6 and 9.5 nm were fabricated by magnetron sputtering. The structure of the multilayer was studied by x-ray diffraction. The combination of Ta and Al forms a metallic superlattice with Ta(110) and Al(111) textures. The x-ray diffraction patterns were simulated using the model for the modulated composition multilayer. The coherence length perpendicular to the film is about 100 nm. The composition modulation is approximately a trapezoidal wave. The thickness of the transition layer is about 1.00 nm for the multilayer with a modulation wavelength of 4.6 nm. The fluctuation of atomic planes in each period is about 5%.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.343713

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6

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Identification of oxygen vacancies in YBaCuO superconductors by high-resolution electron microscopy (1989)

Liang, Y. H. ; Chen, J. ; Feng, D.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 54 (1989), S. 368-370

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: High-resolution electron microscopy studies as well as computer simulation studies on oxygen vacancies in Y-Ba-Cu-O superconductors show that the existence of oxygen vacancies at {0, 1/2, 0} sites leads to the distortions of structural images. For certain imaging conditions, the spots corresponding to the column of oxygen vacancies can be distorted heavily, so that the indirect image of oxygen vacancies in Y-Ba-Cu-O superconductors may be acquired. The results reveal that even in local area the oxygen vacancies may be distributed regularly.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101452

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7

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Annealing temperature dependence of Raman scattering in Ge+-implanted SiO2 films (1997)

Wu, X. L. ; Gao, T. ; Bao, X. M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 82 (1997), S. 2704-2706

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have examined the Raman spectra of violet and infrared emitting Ge+-implanted SiO2 films with special emphasis upon annealing temperature (AT) dependence of Raman scattering. We found that the complete spectrum mainly consists of three bands at 220–280, 300, and 430 cm−1, corresponding to scattering of Ge-related components, Ge nanocrystallites, and localized Si–Si optical phonons in the Ge neighborhoods, respectively. The Ge crystalline band shows an obvious AT dependence. The theoretical result from the phonon confinement model can predict its linewidth change with AT, but cannot explain its constant peak frequency. Based on the experimental result from x-ray diffraction, we attributed the discrepancy mainly to the compressive stress exerted on Ge nanocrystallites, which leads to the upshift of Ge crystallite peak thereby basically compensating the downshift caused by the confinement on phonon frequency. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.366089

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8

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X-ray diffraction study of alternating nanocrystalline silicon/amorphous silicon multilayers (1997)

Wu, X. L. ; Tong, S. ; Liu, X. N. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 70 (1997), S. 838-840

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Structural properties of alternating nanocrystalline silicon/amorphous silicon multilayers with visible light emission at room temperature were examined by means of x-ray diffraction. According to the linewidths and intensities of the diffraction peaks in the low- and high-angle ranges, we have determined the effective interface thickness, the mean crystallite sizes, and the internal strains, which are closely related to the photoluminescence in this material. In addition, the existence of the voids or holes was also observed, indicating that the improved electrical properties of this kind of hydrogenated nanocrystalline materials are due to the inhomogeneous structure of the material. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.118219

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9

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Observation of folded acoustic phonons in nanocrystalline silicon/amorphous silicon multilayers (1996)

Wu, X. L. ; Siu, G. G. ; Stokes, M. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 1855-1857

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report in this letter the observation of folded acoustic phonons in hydrogenated nanocrystalline silicon/amorphous silicon multilayers with visible emission, which are prepared in a plasma enhanced chemical vapor deposition system. In the low-frequency range of 10–100 cm−1, the obtained Raman spectra clearly show some folded doublets from longitudinal acoustic phonons. Using the elastic continuum model, we calculated their frequencies and the obtained results were in agreement with the experimental ones. In addition, some broad folded doublets and additional peaks were clearly observed in the sample with thin nancorystalline sublayers. We attributed them to the mixing of longitudinal and transverse acoustic phonons due to the layered structure. A confined acoustic mode was also proposed to be responsible for the strongly folded longitudinal acoustic phonon peak at 61 cm−1. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.117456

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10

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Concurrent variation of giant magnetoresistance and saturation Kerr rotation in NiCo/Cu multilayers (1998)

Du, J. ; Tong, L. N. ; Lu, M. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 3371-3373

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The dependences of magneto-optical effect, effective optical constants, and giant magnetoresistance (GMR) on the thickness of Cu layers were investigated in NiCo/Cu multilayers prepared by rf magnetron sputtering. A peak of saturation polar Kerr rotation θK, occurred simultaneously with that of GMR ratio when the Cu thickness is around 1.0 nm, where a clear drop of the effective optical constants n and k appeared. The peak of θK is mainly caused by the reduction of the effective optical constants, which dominate over the small drop of the effective off-diagonal elements of the dielectric tensor. The concurrent variation of GMR and θK is related to antiferromagnetic interlayer coupling, which may change the electron band structure and thus the optical and magneto-optical transitions of electrons. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.121607

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