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  • 1
    Digitale Medien
    Digitale Medien
    DIII-D divertor reflectometer system : Proceedings of the eleventh topical conference on high temperature plasma diagnostics (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 447-449 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Divertor density profiles, asymmetries, turbulence, and MARFE diagnosis are extremely important and affect the divertor design process for ITER and other future devices. In addition, a functioning divertor density profile system will be essential for the operation of these machines. It is thus critical to prototype and demonstrate diagnostics capable of operating in a divertor environment. To meet these needs a divertor reflectometer system has been designed and installed on DIII-D. The design stresses flexibility, modularity, and simplicity. It consists of a circular, smoothwall, overmoded waveguide followed by a TE11⇒HE11 mode converter (the HE11 mode is a low loss Gaussian mode with a very symmetric radiation pattern, optimal for this use) thus allowing use of an arbitrary polarization (fpe,fLH,fRH). The design provides for testing of a variety of antennas/probing directions including: upward to probe the X-point region, including MARFEs, sideways to probe outboard/inboard divertor legs, and oppositely directed to probe both divertor legs simultaneously. System design, operational considerations, and experimental data are presented. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1147603
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  • 2
    Digitale Medien
    Digitale Medien
    Effects of rolling conditions on microstructure and magnetic properties of thin gauged 3% Si–Fe sheets (abstract) : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4115-4115 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: To match the requirements for development of transformer cores with lower iron losses, many new materials are under development including amorphous materials, 6.5% Si–Fe sheets and thin gauged 3% Si–Fe sheets. Among these materials, the thin gauged 3% Si–Fe sheets are attracting attention due to their good magnetic properties and scientific interest. Arai et al. reported that the magnetic properties of the sheets were comparable to those of the amorphous materials and (110)[001] preferred orientation of the sheets are developed by tertiary recrystallization.1 The 100 μm thick 3% Si–Fe sheets were prepared via conventional metallurgical processes including melting and casting, hot rolling to 25 mmT at 1200 °C, first cold rolling to 0.5 mmT, intermediate annealing at 800 °C for 30 min, second cold rolling to 0.25 mmT, intermediate annealing at 800 °C for 30 min, final cold rolling to 100 μm and final annealing at 1200 °C for 1 h in a vacuum of 5×10−6 Torr. Among these processes, the cold rolling process is an important one because preferred orientation of the sheets was developed in the process. Nakano et al. reported that there was an optimum cold rolling ratio to get required magnetic properties of the sheets.2 Recently, we found that the reduction rate, i.e., number of passes, as well as reduction ratio affected the preferred orientation and magnetic properties of the sheets. The number of passes in the first cold rolling process was changed from 7 to 60 and B10 values of the final sheets were changed from 1.30 to 1.84 T according to the number of passes. From x-ray experiments, it was found that intensity of (110) peak in the cold rolled and annealed sheets strongly affected the magnetic properties of the final sheets. We will discuss the relationship between the reduction rate and preferred orientation, and magnetic properties of the thin gauged 3% Si–Fe sheets. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.365097
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  • 3
    Digitale Medien
    Digitale Medien
    Desirable magnetotransport properties in doped Mn-oxide-based superlattices : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4950-4952 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Superlattice structures based on doped Mn-oxides and SrTiO3 exhibit desirable magnetotransport properties, such as an enhanced magnetoresistance (MR) and a broadened MR transition. An La0.7Ca0.3MnO3 (55 Å)/SrTiO3 (160 Å) superlattice shows 61% MR at 0.5 T and 109 K, defined by [R(0 T)−R(0.5 T)]/R(0 T), compared to 38% MR for a single layer La0.7Ca0.3MnO3 film at 125 K. MR of larger than 85% at 5 T has been observed in a broad temperature range (from 150 to 10 K) for this superlattice. A systematic study of La0.7Ba0.3MnO3/SrTiO3 superlattices shows that the decrease of the La0.7Ba0.3MnO3 layer thickness results in the broadening of the MR peak in temperature. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.365008
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  • 4
    Digitale Medien
    Digitale Medien
    Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systems (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3363-3367 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Interactions of carriers with interface optical phonons dominate over other carrier–phonon scatterings in narrow quantum-well structures. Herein, a transfer matrix method is used to establish a formalism for determining the dispersion relations, electrostatic potentials, and Fröhlich interaction Hamiltonians of the interface optical phonons for multiple-interface heterostructure systems within the framework of the macroscopic dielectric continuum model. This method facilitates systematic calculations for complex structures where the conventional method is very difficult to implement. Several specific cases are treated to illustrate the advantages of the general formalism. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.365649
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  • 5
    Digitale Medien
    Digitale Medien
    Managing Multiple Relationships in Rural Communities: Neutrality and Boundary Violations (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Clinical psychology 4 (1997), S. 0 
    Details
    ISSN: 1468-2850
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Psychologie
    Notizen: Mental health practitioners in rural settings have identified managing multiple relationships as their most difficult ethical dilemma (e.g., Sleek, 1994). Further, they have indicated that specific suggestions for negotiating this difficulty are rare (Stockman, 1990). This article reviews the current status of the literature addressing the management of multiple relationships in rural communities, and proposes that the psychodynamlc concept of neutrality and empirically determined therapy boundary violations provide a useful way to conceptualize managing multiple relationships in rural communities. Guidelines are provided for regulating behavior with both clients and other members of the community who are considered “prospective” clients.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1468-2850.1997.tb00111.x
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  • 6
    Digitale Medien
    Digitale Medien
    Optimal design of reflectometer density profile measurements using a radar systems approach (invited) (abstract) : Proceedings of the eleventh topical conference on high temperature plasma diagnostics (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 415-415 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Reflectometry is an attractive and versatile diagnostic technique that can address a wide range of measurement needs on fusion devices. However, progress in the area of profile measurement has been hampered by the lack of a well-understood basis for the optimum design and implementation of such systems. Such a design basis is provided by the realization that reflectometer systems utilized for density profile measurements are in fact specialized forms of radar systems. In this article five criteria are introduced by which reflectometer systems can be systematically designed for optimal performance: range resolution, spatial sampling, turbulence immunity, bandwidth optimization, and the need for adaptive data processing. Many of these criteria are familiar from radar systems analysis, and are applicable to reflectometry after allowance is made for differences stemming from the nature of the plasma target. These criteria are utilized to critically evaluate current reflectometer density profile techniques and indicate improvements that can impact current and next step devices, such as ITER.© 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1147842
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  • 7
    Digitale Medien
    Digitale Medien
    Development of a fast solid-state high-resolution density profile reflectometer system on the DIII-D tokamak : Proceedings of the eleventh topical conference on high temperature plasma diagnostics (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 466-469 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A new fast-sweep, broadband frequency-modulated reflectometer on the DIII-D tokamak has produced routine, reliable density profiles with high spatial (≤1 cm) and temporal resolution (∼100 μs). The system utilizes a solid-state microwave source and an active quadrupler, covering the full Q-band (33–50 GHz) and providing high output power (20–60 mW). The rf source frequency is linearized using an arbitrary function generator and the temperature of the source is actively controlled to reduce rf frequency drifts. The system hardware allows the rf frequency to be swept fullband in 10 μs, but, due to digitization limits, the sweep time used currently is 75–100 μs. The reliability of the reconstructed profiles was improved by a combination of fast frequency sweep, which reduces density fluctuation effects on the measurements, and advanced signal analysis based on digital complex demodulation, which improves phase accuracy. The fast-sweep system has resolved fast-changing edge density profiles during edge localized modes with unprecedented resolution. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1147607
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  • 8
    Digitale Medien
    Digitale Medien
    Stimulated emission at 300 K from photopumped GaN grown by plasma-assisted molecular beam epitaxy with an inductively coupled plasma source (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 811-813 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaN epilayers have been grown on basal plane (0001) sapphire by plasma-assisted molecular beam epitaxy (MBE) with a novel, inductively coupled nitrogen plasma source. Films grown at 700 °C generate stimulated emission at 300 K when optically pumped in vertical geometry with ∼3.5 eV (λ=355 nm) photons. The extrapolated pump power threshold is ∼3.6 MW cm−2 which corresponds to an absorbed value of 700 kW cm−2 and a peak carrier number density of ∼4×1019 cm−3. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118230
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  • 9
    Digitale Medien
    Digitale Medien
    Anomalous photoluminescence from 3C-SiC grown on Si(111) by rapid thermal chemical vapor deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1757-1759 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Single crystal 3C-SiC epitaxial films are grown on Si(111) surfaces using tetramethylsilane by rapid thermal chemical vapor deposition. Strong blue/green photoluminescence (PL) was observed at room temperature from the free films of SiC prepared by etching the Si substrate. The main PL peak energy varies from 2.1 to 2.4 eV with full widths at half-maximum between 450 and 500 meV, depending on the growth condition, excitation wavelength and excitation light intensity. A weak peak at 3.0 eV also appeared. The infrared (IR) spectra of free films of SiC exhibit modes associated with CH and OH groups. We also compared PL characteristics of free films of SiC with those from porous SiC produced by anodization of SiC/Si to determine the origin of the PL. Porous SiC shows a PL peak centered at 1.9 eV, different from those in SiC. From the analysis of the IR spectra and scanning electron microscopic images, we tentatively suggest that the origin of the PL from free films of SiC might be associated with an OH group adsorbed on defects or some localized states as is the case for an amorphous SixC1−x alloy. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118648
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  • 10
    Digitale Medien
    Digitale Medien
    Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 800-802 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ternary AlInN was grown by metal–organic chemical-vapor deposition in the high Al composition regime. The band-gap energy of AlInN ternary was measured by optical absorption spectroscopy at room temperature. The band-gap energy of Al0.92In0.08N is 5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119650
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