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1

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Impact ionization coefficients for electrons and holes in strained In0.2Ga0.8As and In0.15Ga0.63Al0.22As channels embedded in Al0.3Ga0.7As (1993)

Chen, Y. C. ; Bhattacharya, P. K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 73 (1993), S. 465-467

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have measured impact ionization coefficients, α and β, in 150 A(ring) pseudomorphically strained materials for the first time. The measurements were made on specially designed lateral p-i-n diodes. α and β in lattice-matched GaAs layers are found to be lower than those in strained In0.2Ga0.8As and higher than those in strained In0.15Ga0.63Al0.22As. β is larger than α in all the samples. The results are discussed in terms of the changes in the band structure due to biaxial strain.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.353874

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2

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Characterization of high-quality pseudomorphic InGaAs/GaAs quantum wells by luminescence and reflectance techniques (1992)

Pamulapati, J. ; Bhattacharya, P. ; Tober, R. L. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 4487-4491

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Reflectance and photoluminescence spectroscopy have been used to study the optical properties of high quality InxGa1−xAs/GaAs (0.13≤x≤0.30) single quantum wells. The results show strong agreement with the theoretical model used taking into account the strain potential. The agreement of the theoretical model, though, deviates from the experimental results for large values of excess strain in the well. For the case of the large strain (x=0.30) the reflectance indicates the strain in the well is hydrostatic rather than biaxial. The relevance of this fact is discussed in relation to device performance.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.350793

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3

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Gas-source molecular-beam epitaxy using Si2H6 and GeH4 and x-ray characterization of Si1−xGex (0≤x≤0.33) alloys (1992)

Li, S. H. ; Chung, S. W. ; Rhee, J. K. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 4916-4919

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Gas-source molecular-beam epitaxy (MBE) has been used to grow SiGe alloys with Si2H6 and GeH4 as sources on (100) Si substrates. Single-crystalline epilayers with Ge composition as high as 33% have been produced at 610 °C, the lowest temperature hitherto used for gas-source SiGe MBE. Growth parameters, growth modes, and the structural characteristics have been studied by a variety of in situ and ex situ techniques. Double-crystal x-ray diffraction data for the alloys have been obtained for the first time in thin mismatched layers.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.350639

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4

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Temporal response of photodiodes with GaAs/AlxGa1−xAs (0.1≤x≤0.3) multiquantum well absorption regions (1992)

Goswami, S. ; Davis, L. ; Bhattacharya, P. K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 72 (1992), S. 4888-4892

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have measured and analyzed the temporal response characteristics of high-speed photodiodes having GaAs/AlxGa1−xAs (0.1≤x≤0.3) multiquantum well absorption/transit regions. It is seen that the response time of devices with Al0.1Ga0.9As barriers is fairly insensitive to the applied reverse bias and a 30-μm-diam mesa-etched device exhibits a 30 ps response time. The response time of devices with barriers having x≥0.1 is sensitive to the applied bias, which changes the mode of carrier escape from the wells for collections.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.352357

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5

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High-field transport properties of InAsxP1−x/InP (0.3≤x≤1.0) modulation- doped heterostructures at 300 and 77 K (1992)

Yang, D. ; Bhattacharya, P. K. ; Hong, W. P. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 72 (1992), S. 174-178

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have measured the high-field transport characteristics of pseudomorphic InAsxP1−x/InP (0.3≤x≤1.0) modulation doped heterostructures at 300 and 77 K. The field dependent steady state average velocities increase steadily with increase in x. The maximum velocities that have been measured in InAs/InP are 1.7×107 cm/s (2.5 kV/cm) and 3.2×107 cm/s (2.2 kV/cm) at 300 and 77 K, respectively. These are the highest velocities measured in any modulation doped heterostructure. The field dependent channel carrier concentration and mobility data indicate that there is very little real space transfer of carriers at high fields and this is confirmed by results from steady state Monte Carlo calculations.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.352154

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6

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Differential photocurrent spectroscopy: A novel technique for semiconductor characterization (1992)

Tober, Richard L. ; Li, W. Q. ; Bhattacharya, P. K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 3506-3509

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Differential photocurrent spectra of various InxGa1−xAs diodes demonstrate that modulated photocurrent techniques can easily be used to characterize p-i-n and Schottky diode structures. The spectra were obtained in such a way as to produce a first derivative with respect to either the photon energy or an electric field. A simple model yields an expression for the differential photocurrent spectra in terms of the derivative functional form normally used to fit modulated spectra. Therefore, the sharp spectral features produced with these techniques can be used to determine not only band-gap energies and spectral linewidths but built-in electric fields as well.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.350904

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7

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Low-loss, single-mode In0.53Ga0.47As/In0.52Al0.48As/InP optical waveguides fabricated by Zn-induced impurity-induced layer disordering (1991)

Lai, R. ; Pamulapati, J. ; Bhattacharya, P. K. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 5136-5137

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have investigated the properties of Zn diffusion in the In0.53Ga0.47As/In0.52Al0.48As superlattice and have made optical guides delineated by Zn-induced layer disordering in the multilayers. Measurements on the single-mode waveguides show loses as low as 2.3 dB/cm including coupling loss.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.348989

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8

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Optical properties of high-quality InGaAs/InAlAs multiple quantum wells (1991)

Gupta, S. ; Bhattacharya, P. K. ; Pamulapati, J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 3219-3225

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have measured the narrowest half-width at half-maximum photoluminescence linewidth of 2.8 meV, in 40-period lattice-matched In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells, grown by molecular-beam epitaxy with growth interruption. A simple analysis of the linewidth suggests that the structure has near perfect interfaces. Temperature-dependent photoluminescence linewidth data indicate impurity incorporation due to the growth interruption. However, the high quality of the multiple quantum well is not impaired as is seen in the room-temperature absorption data, where excitonic features up to n=3 sublevel are clearly seen. Carrier lifetime in this multiple-quantum-well system has been measured, we believe for the first time, using the picosecond photoluminescence correlation technique. A lifetime of 860 ps is obtained, which is similar to the value obtained for high-quality GaAs/AlGaAs and In0.53Ga0.47As/InP quantum wells. This further confirms the high quality obtained in this ternary material system using growth interruption.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.348540

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9

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Determination of critical layer thickness and strain tensor in InxGa1−xAs/GaAs quantum-well structures by x-ray diffraction (1993)

Chen, Y. C. ; Bhattacharya, P. K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 73 (1993), S. 7389-7394

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have used the double-crystal x-ray rocking curve technique to determine lattice constant, strain relaxation, thickness, and critical thickness of a thin InxGa1−xAs layer embedded in GaAs. In this work we have measured and analyzed x-ray data over a wide scan angle (∼2.0°). This allows the simultaneous determination of buried layer thickness and strain. The measurement results were analyzed by the dynamical diffraction theory. The critical thickness for an InGaAs layer embedded in GaAs obtained from x-ray data is shown to be larger than that predicted by the force balance model. The strain tensors as a function of layer thickness are also analyzed for the buried InxGa1−xAs of different x values.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.354030

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10

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Raman scattering from heavily doped (311) GaAs:Si grown by molecular beam epitaxy (1992)

Kwok, S. H. ; Merlin, R. ; Li, W. Q. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 72 (1992), S. 285-286

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Raman scattering by localized vibrational modes and plasmons has been used to characterize heavily p- and n-type silicon-doped (311)A GaAs layers grown by molecular beam epitaxy. Consistent with the doping character, p-type samples show two modes associated with Si(As) and the complex defect Si-X. Acceptor-related lines were not observed in n-type samples, an indication that compensation levels in the layers are very low. The results are discussed in relation to growth conditions on (311)A surfaces.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.352131

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