ZIB

Treffer pro Seite

Treffer 1 - 2 | 2 Treffer

Sortierung

Digitale Medien

Richtungskorrelation für Kernresonanzfluoreszenz und Lebensdauer des 412 keV-Niveaus von198Hg (1963)

Friedland, E. ; Lemmer, H. R.

Springer

The European physical journal 174 (1963), S. 507-510

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 1434-601X

Quelle: Springer Online Journal Archives 1860-2000

Thema: Physik

Notizen: Abstract Using the method of thermal Doppler-broadening of the emission line, the effective differential cross sections for nuclear resonance scattering for 412 keV photons by198Hg has been measured for well defined scattering angles of 120° and 160°. The results indicate a partial mean lifetime for this energy level of τγ=(5·12±0·23)·10−11 sec. This result differs appreciably from the values reported by other workers. Possible reasons for these discrepancies are discussed. The ratio of the differential cross sections for resonance scattering at angles of 120° and 160° is consistent with a 0-2-0 transition.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01380633

Permalink

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

Digitale Medien

Silicon ion bombardment of Sb/Si contacts (1992)

Malherbe, J. B. ; Friedland, E. ; Bredell, L. J. ; [weitere]

Chichester [u.a.] : Wiley-Blackwell

Surface and Interface Analysis 19 (1992), S. 341-346

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 0142-2421

Schlagwort(e): Chemistry ; Polymer and Materials Science

Quelle: Wiley InterScience Backfile Collection 1832-2000

Thema: Physik

Notizen: Si+ bombardment of Sb/n-Si Schottky contacts significantly affects the values of some Schottky parameters even at low does densities. The parameters considered are the ideality constant n, the saturation current density Is and the series resistance R. Before implantation these parameters exhibited large variations due to interface conditions. After implantation more uniform I-V characteristics were observed. Implantation led to higher values for the ideality constant and the series resistance and lower values for the saturation current. The ideality factor showed a decrease with increasing implantation dose. The saturation current and series resistance did not show any dose dependence. The compositional/structural properties of the contacts after ion bombardment are altered at high dose densities. For dose densities φ ≥ 5 × 1014 Si+ cm-2, α-particle channelling showed the silicon substrate to be partly amorphized. This amorphization increased with increasing dose densities. AES and RBS measurements found no evidence of silicide formation. Only slight mixing was observed. Other experimental and theoretical studies either confirm our measurements or confirm the trend of our measurements.

Zusätzliches Material: 4 Ill.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1002/sia.740190164

Permalink

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

Treffer 1 - 2 | 2 Treffer