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  • 1
    Digitale Medien
    Digitale Medien
    Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2343-2348 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The lattice heating rate has been calculated for GaAs field-effect transistors of different source-drain channel design by means of the ensemble Monte Carlo particle model. Transport of carriers in the substrate and the presence of free surface charges are also included in our simulation. The actual heat generation was obtained by accounting for the energy exchanged with the lattice of the semiconductor during phonon scattering. It was found that the maximum heating rate takes place below the surface near the drain end of the gate. The results correlate well with a previous hydrodynamic energy transport estimate of the electronic energy density, but shifted slightly more towards the drain. These results further emphasize the adverse effects of hot electrons on the Ohmic contacts. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360153
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  • 2
    Digitale Medien
    Digitale Medien
    Binary information storage at zero bias in quantum-well diodes (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5552-5560 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is argued, based on the intrinsic time-dependent behavior of double-barrier structures, that a modification of a conventional quantum-well diode with special spacer-layer structure in the source and/or the drain region will lead to two stable current-voltage and charge state behaviors all the way down to zero bias. This viewpoint explains the salient features of a recent experimental observation on quantum-well diodes with n−-n+-n− spacer layers. We substantiate this with a simple theory of self-consistent charge buildup and bistability, and show that a limited supply or highly altered distribution of electrons from the emitter at high bias leads to fractional recharging of the quantum well and fractional current values, during the decreasing voltage sweep portion of a "closed-loop'' voltage sweep. This is in contrast with previous theories based on numerical simulations which allow for more than two current states, by virtue of the use of time-independent analysis and/or the use of "open-multibranch'' voltage sweep which do not correspond to the "closed-loop'' voltage sweep in the actual experiments mentioned above. This two charge state phenomenon then is the basis for a feasible binary-information storage device at zero bias without dissipation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357158
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  • 3
    Digitale Medien
    Digitale Medien
    Zener tunneling condition and the hysteresis of trapped charge in an AlGaSb barrier in AlGaSb/InAs/AlGaSb double-barrier structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6046-6048 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The essential role played by the physics of Zener tunneling of electrons from the barrier to the drain in finding the solutions to the field, energy-balance, and quantum transport equations in AlGaSb/InAs/AlGaSb double-barrier structures is pointed out. It is shown that the self-consistent physical consideration on these equations is crucial in obtaining interesting and realistic novel hysteresis phenomena of the trapped hole charge in an AlGaSb barrier. There exist solutions to the above equations which do not incorporate the physics of Zener tunneling, which are therefore physically untenable.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359192
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  • 4
    Digitale Medien
    Digitale Medien
    On the different physical roles of hysteresis and intrinsic oscillations in resonant tunneling structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1515-1525 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electronic sources based upon resonant tunneling diodes (RTDs) usually generate power by establishing limit cycles which exchange energy with storage elements in an external biasing circuit; hence, the output power in this type of implementation will always be limited by extrinsic effects. We verify the presence of multiple energy-storage mechanisms solely within the RTD and characterizes the interdependencies necessary to induce intrinsic oscillations observed in quantum mechanical simulations. Specifically, we show that a nonlinear "access'' resistance and quantum-well inductance is responsible for the hysteresis, "plateaulike'' behavior, and bistability associated with the intrinsic current–voltage (I–V) characteristic. Furthermore, a new circuit-level representation which accurately incorporates the nonlinear dependencies into these heretofore "linear'' equivalent-circuit elements is used to demonstrate the different roles, as well as the degree of cooperative interplay, of the intrinsic oscillations and hysteresis in determining the overall I–V characteristics of the RTD.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360994
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  • 5
    Digitale Medien
    Digitale Medien
    Erratum: "Double-barrier THz source based on electrical excitation of electrons and holes" [J. Appl. Phys. 86, 5215 (1999)] (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3189-3189 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.372323
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  • 6
    Digitale Medien
    Digitale Medien
    Double-barrier THz source based on electrical excitation of electrons and holes (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5215-5231 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A detailed dynamical analysis of an all solid-state THz source is given. This is based on the polarization-induced autonomous oscillation in resonant tunneling heterostructure with staggered band-gap alignment. The physical model consists of the following processes: (a) Generation by Zener tunneling of holes trapped in the barrier and electrons drifting in the depletion layer of the drain, whose rate decreases with the polarization between the barrier and quantum well. (b) Stimulated generation of barrier-well polarization. (c) Nonradiative decay of barrier-well polarization through barrier-hole recombination and quantum-well electron discharge. It is shown that a limit cycle oscillation of the barrier-well polarization and trapped-hole charge in the barrier can occur which induce THz oscillations in the resonant tunneling current across the device. The time-averaged results agree with the measured current–voltage characteristic of AlGaSb/InAs/AlGaSb staggered band-gap double-barrier structure. In particular, the measured smaller current offset at forward bias compared to that of reverse bias in the current–voltage hysteresis loop is predicted by our physical model and limit cycle analysis. Thus, we have experimental evidence indicating the correctness of our approach and the promising potential of this device as a novel all solid-state THz source. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371503
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  • 7
    Digitale Medien
    Digitale Medien
    The effects of scattering on current-voltage characteristics, transient response, and particle trajectories in the numerical simulation of resonant tunneling diodes (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7602-7607 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The relaxation-time approximation is used in the numerical simulation of the Wigner distribution function to incorporate scattering. The effects within the constant relaxation-time approximation are (a) a decrease in the peak-to-valley ratio of the current-voltage curve; (b) a reduction in the oscillations of the Wigner distribution function, especially at resonance bias; (c) a suppression of the decay time of current oscillations after a sudden bias shift, indicating a smaller switching time than for no scattering; (d) a degradation in the resonant tunneling trajectories towards the characteristics of nonresonant trajectories; (e) a decrease in the spatial range of the quantum influences near resonance; and (f) ballistic transport sets in [i.e., the mean free path of the electrons is greater than the barrier region (110 A(ring))] for temperatures less than 74 K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345828
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  • 8
    Digitale Medien
    Digitale Medien
    Numerical simulation of transient response and resonant-tunneling characteristics of double-barrier semiconductor structures as a function of experimental parameters (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 5248-5250 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The tunneling current characteristics and transient response of double-barrier semiconductor structures are simulated for different barrier and quantum-well widths, barrier heights, operating bias voltage, and ambient temperatures, using the equation for the Wigner distribution function. The numerical results suggest the following: (a) There is a particle buildup inside the quantum well prior to the resonant current peak as the applied bias is varied: (b) the number of resonant energy levels seen in the simulation agrees with its proportionality to the square root of the product of the barrier height and quantum-well width: (c) the resonant peak width is larger for higher resonant energy levels than for the lower resonant energy levels in agreement with the different degree of localization of these levels; (d) at T=77 K, the current slowly increases with bias at lower bias than for T=300 K, with higher peak-to-valley ratio at T=77 K, presumably due to a much sharper convolution of the tunneling density and resonant energy level width; and (e) a higher degree of localization and existence of numerically resolved resonant energy level, in the case of asymmetrical barrier widths, occurs when the thicker barrier is located in the side with lower electron potential or higher voltage bias; no negative differential resistance was observed when these barrier widths were interchanged in our simulation. The superior accuracy of an alternative finite difference scheme, coupled with the Cayley form for the time evolution operator, in this type of numerical simulation is briefly discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.343120
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  • 9
    Digitale Medien
    Digitale Medien
    A mechanism for radiation-induced degradation in GaAs field-effect transistors (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 581-590 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaAs field-effect transistors (FETs) exposed to 40 α/sec for about 60 sec in the gate region revealed burnout from under the gate to both the drain and source. To explain this result, we show by using a 2D numerical FET simulation that a single event, particularly normal to the gate, has all the harmful electrical and thermal transients as that of a reverse gate-voltage pulse or positive drain-voltage pulse. The latter two are well known to initiate burnout failure mechanisms in GaAs FETs, depending on duty cycle and peak power applied. The onset of burnout due to a succeeding single event may be further aided by the ionization-enhanced outdiffusion of deep-level traps to the active channel during a series of single events. The experimental data, principally from SEM analysis and degradation of I-V characteristics, seem to support the thermal runaway burnout mechanism proposed in this paper. Other mechanisms previously suggested are either ruled out or deemed inadequate. A high-fluence radiation-hardened structural FET design is suggested.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.334741
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  • 10
    Digitale Medien
    Digitale Medien
    Self-consistent Monte Carlo particle transport with model quantum tunneling dynamics: Application to the intrinsic bistability of a symmetric double-barrier structure (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5975-5981 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The intrinsic bistability in a symmetric resonant tunneling device (RTD) is simulated by the ensemble particle Monte Carlo technique, coupled with a simple model of the space- and time-dependent particle quantum dynamics inside the double-barrier region of the RTD. This model particle quantum dynamics is based upon the phase-time delay, which is obtained from a piecewise-linear-potential Airy function approach to the calculation of the transmission amplitude. An unambiguous hysteresis in the negative differential resistance (NDR) region of the current-voltage (I-V) characteristic is observed for a symmetric AlGaAs/GaAs double-barrier structure. The dynamical accumulation of carriers in the well is seen to be the cause of this marked bistability/hysteresis. However, the plateau-like features of the I-V curve are not resolved, although oscillations in the quantum well carrier density in the NDR are prominent. This article strongly suggests that a more accurate treatment of the space- and time-dependent particle quantum dynamics across the RTD is of paramount importance.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351907
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