ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
We investigate the effect of unmonochromatized synchrotron radiation (USR) on the room-temperature reaction between a Si(111)2×1 surface and adsorbed NO. After exposition to NO of the Si(111) surface, an oxynitride/silicon interface is formed. The evolution with irradiation time of the oxynitridation of silicon and of the oxynitride/silicon interface formation is examined in situ by means of core-level and valence-band photoemission spectroscopy, Auger electron spectroscopy, and work-function measurements. The analysis of the valence band and Si 2p, O 2s, and N 2s photoelectron spectra, together with the Auger Si transition, clearly exhibits additional oxynitride formation under USR. The oxygen-to-nitrogen ratio, O/N, from the thin oxynitride layer increased after a long time ((approximately-greater-than)10 min) of exposure to USR. Hence, USR appears to have the opposite effect to the one produced by thermal activation in which the nitridation is favored.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.349412
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