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  • 1
    Digitale Medien
    Digitale Medien
    Deep levels and trapping mechanisms in chemical vapor deposited diamond (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5765-5774 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Detector-grade undoped chemical vapor deposited (CVD) diamond samples have been studied with thermally stimulated currents (TSC) and photoinduced current transient spectroscopy (PICTS) analyses in the temperature range 300–650 K. Two previously unknown defects have been identified, characterized by activation energies E1=1.14 eV and E2=1.23 eV, cross sections of about σ(approximate)10−13 cm2 and concentrations of Nt(approximate)1016 cm−3. They have been clearly observed by PICTS and isolated in TSC measurements by use of a fractional annealing cycle in the temperature range 300–400 K. Due to their trap parameters, in particular the high cross section, the levels corresponding to E1 and E2 are characterized by capture times of the order of 10–100 ps. A dominant TSC peak observed at (approximate)500 K has been also investigated and has been resolved into four components with activation energies of the order of 1 eV and cross sections in the range 10−19–10−17 cm2. Three of these levels exhibit a fast capture rate (0.1–10 ns) in spite of their small cross sections, due to their high concentration in the investigated sample. Correlating our results with room temperature charge collection studies, we propose that the observed traps with their fast capture rates can be effective in limiting the carrier lifetimes and, consequently, the charge collection efficiency of CVD diamond particle detectors © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1461891
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  • 2
    Digitale Medien
    Digitale Medien
    Measurements of Charge Collection Efficiency of p〈sup〉+〈/sup〉/n Junction SiC Detectors (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 483-485 (May 2005), p. 1021-1024 
    Details
    ISSN: 1662-9752
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Maschinenbau
    Notizen: Silicon carbide is a promising wide-gap material because of its excellent electrical and physical properties, which are very relevant to technological applications. In particular, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments [1]. In this work p+/n SiC diodes realized on a medium doped (1×1015 cm [removed info]-3), 40 µm thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under beta particle radiation from Sr90 source are presented. Preliminary results till 900 V reverse voltage show a good collection efficiency of 1700 e- and a collection length (ratio between collected charges and generated e-h pairs/µm) equal to the estimated width of the depleted region
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.1021.pdf
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  • 3
    Digitale Medien
    Digitale Medien
    Minimum Ionizing Particle Detector Based on p〈sup〉+〈/sup〉n Junction SiC Diode (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1469-1472 
    Details
    ISSN: 1662-9752
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Maschinenbau
    Notizen: In this work ion-implanted p+/n diodes have been used as minimum ionizing particle(MIP) detectors. The diode structure is based on a 0.45 $m deep, NA = 4×1019 cm-3 doped p+ anode,ion implanted in an n-type epilayer with thickness equal to 55 $m and nominal donor doping ND= 2×1014 cm-3. The diode breakdown voltages were above 1000V. At 1000V reverse bias the diodeleakage current was of the order of 1 nA. The punch through depletion voltage was nearing therange 220-250 V. The charge collection efficiency to minimum ionizing particle was investigated bya 90Sr β source. The pulse height spectrum was measured as a function of the reverse voltage in therange 0-605 V. At each bias point the signal was stable and reproducible, showing the absence ofpolarization effects. At 220 V the collected charge was 2970 e- and saturated at 3150 e- near 350 V.At the moment, this is the highest collected charge for SiC detectors. At bias voltages over 100Vthe spectrum was found to consist of two peaks clearly separated. Around 250 V the signalsaturates, in agreement with CV results
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1469.pdf
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