Library

X
Your search history is empty.
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Optical properties of LiNbO3 implanted with Ag ions (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6651-6654 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ag ions were implanted in LiNbO3 at energies of 25 keV and 3 MeV. Optical absorption spectra were measured in the visible range. A large absorption peak due to small colloidal Ag metal was observed at 460 and 510 nm for the as-implanted sample at 3 MeV and 25 keV, respectively. Subsequently, the samples were heated in air up to 600 °C. The absorption peak moved toward longer wavelengths up to 560 nm when the sample was heated at high temperature. Small droplets of metallic Ag expelled from the implanted layer formed on the surface of the sample even when the samples were held at room temperature. The number and size of the droplets grew with time and their growth was accelerated when the samples were heated at high temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363788
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Eu-doped KCl phosphor crystals as a storage material for two-dimensional ultraviolet-ray or x-ray imaging sensors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7493-7497 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense optically stimulated luminescence (OSL) with a peak at about 430 nm is observed in ultraviolet (UV)-ray or x-ray irradiated europium-doped potassium chloride (KCl:Eu) phosphor crystals. The OSL intensity is increased with increasing UV-ray or x-ray irradiation dose. This suggests that KCl:Eu phosphor crystal is useful as a material for two-dimensional UV-ray or x-ray imaging sensor utilizing OSL phenomenon. The results obtained are consistent with the proposed emission mechanisms of the 420 nm OSL peak, based on the recombination of electrons released from the F centers with Eu3+ ions. The excitation mechanism for the OSL in UV-ray irradiated KCl:Eu phosphor crystals is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356621
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Defects in ZnSe/ZnTe multiple quantum well-based pseudo-ohmic contacts to p-ZnSe (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3616-3623 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of ZnSe/ZnTe multiple quantum well-based pseudo-ohmic contacts to p-ZnSe was investigated using transmission electron microscopy and high-resolution transmission electron microscopy. In the case of samples consisting of five ZnSe/ZnTe multiple quantum wells, both pure edge Lomer dislocations and 60° dislocations were identified at the interface between the ZnSe/ZnTe multiple quantum wells and the ZnTe overlayer, along with partial dislocations bounding stacking faults. The dominant dislocations at the interface are Lomer dislocations. In the case of samples grown under group II-rich conditions, the interface exhibits corrugations. At the top and bottom of the corrugations, the Lomer dislocations are dominant and in the slope of the corrugations, 60° dislocations are dominant. In the case of samples grown using migration-enhanced epitaxy, V-shaped defects consisting of three dislocations associated with two stacking faults are formed. The total Burgers vector of the V-shaped defects is a〈100〉. The increasing total thickness and the number of ZnSe/ZnTe multiple quantum wells leads tend to make the dominant defects dissociated 60° dislocations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371269
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Gain characteristics of gain-guided II–VI laser diodes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3893-3895 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the gain characteristics of gain-guided quantum well II–VI laser diodes by measuring the amplified spontaneous emission spectra under several pulsed conditions. The temperature rise during one current pulse affects the gain characteristics and the L-I characteristics. The net modal gain at constant peak current increases with the pulse width. The peak gain for long pulses shows a superlinear dependence on injection current. In this case, the L-I curve is very steep above threshold and sometimes shows an internal quantum efficiency of more than unity. This leads to an underestimation of the internal cavity loss giving a value inconsistent with the one obtained from the gain spectra. With short pulse currents (〈200 ns), the peak gain shows a weak sublinear dependence on injection current. The cavity losses obtained from the gain spectra and the L-I characteristics at short pulses are consistent. As a result, we obtain the intrinsic gain characteristics of gain-guided quantum well II–VI laser diodes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117561
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Microstructural study of optically degraded ZnCdSe quantum wells (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1824-1826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect structure of optically degraded ZnCdSe quantum wells was investigated using transmission electron microscopy. The defects were composed of the dislocation dipoles with a Burgers vector of b=−(a/2)[101] inclined at 45° to the (001) plane. The dislocation dipoles consist of two segments aligned along the [11¯0] direction and the [120] direction. The [11¯0] dipole segments lying in the (111¯) plane were developed by the recombination-enhanced dislocation glide process, while the [1¯2¯0] dipole segments lying in the (2¯11) plane were developed by the recombination-enhanced dislocation climb process. Both processes operate simultaneously. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123098
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Universal curves for optical power degradation of II–VI light-emitting diodes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1588-1590 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a transient recombination-enhanced defect-generation model to analyze the degradation of optical output powers of blue-green II–VI light-emitting diodes (LEDs). We find an analytical solution and discover a set of universal curves for the time dependence of optical output power, which agree very well with the experimental data for strained CdZnSe quantum-well structures. Our model shows that the optical power can be non-exponential in character and its long-time behavior has a 1/t dependence. This 1/t dependence is also related to the growth of the defect density, which should behave as a t1/2 dependence. The generation of new defects due to electron-hole recombination at the defect sites is found to be the dominant degradation mechanism for II–VI LEDs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117039
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Empty-space-in-silicon technique for fabricating a silicon-on-nothing structure (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3290-3292 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A promising technique to form the silicon-on-nothing structure is presented as an alternative to the silicon-on-insulator structure. A large plate-shaped empty space in silicon (ESS) below the surface of the silicon substrate can be fabricated by connecting the spherical empty spaces, which are formed by surface migration of Si on the patterned Si substrate. The ESS technique has the potential to change the microprocess for the fabrication of large-scale integrated circuits and it can be applied to various manufacturing technologies. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324987
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Reduced expression of actin-binding proteins, h-caldesmon and calponin h1, in the vascular smooth muscle inside melanoma lesions: an adverse prognostic factor for malignant melanoma (2003)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 148 (2003), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary Background The structural integrity of the blood vessels such as small arteries and veins is studied less frequently in malignant tumours than is angiogenesis. Objectives To clarify the characteristics of small arteries and small veins of melanoma lesions. Methods We immunohistochemically investigated various types of melanocytic tumours using antibodies specific for endothelial and vascular smooth muscle cells, and analysed the relationship between the expression of these molecules in the blood vessels and the biological characteristics of the tumours. Formalin-fixed, paraffin-embedded sections of 15 cases of benign melanocytic tumours and 64 cases of malignant melanomas were investigated. Results Significant suppression of expression of h-caldesmon (h-CD) and calponin h1 (CNh1) was observed in the blood vessels of malignant melanomas compared with both benign melanocytic tumours and normal tissues. In particular, the level of h-CD expression was inversely correlated with the frequency of metastasis and positively correlated with the survival rate in patients with malignant melanoma. Conclusions These findings suggest that alterations of the tumour vessels are an important factor for the prognosis of malignant melanoma, and that suppression of h-CD and CNh1 in the blood vessels in malignant melanoma reflects a structural fragility of the vessels, leading to their easy penetration by tumour cells. Defective expression of these molecules is likely to be an important marker for metastatic potential and for poor prognosis of melanoma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.2003.05238.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Eosinophilic pustular folliculitis responding to cyclosporin (1994)
    Oxford, UK : Blackwell Publishing Ltd
    British journal of dermatology 131 (1994), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2133.1994.tb04997.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Detection of human T-cell lymphotropic virus type-1 proviral DNA in the saliva of an adult T-cell leukaemia/lymphoma patient using the polymerase chain reaction (1993)
    Oxford, UK : Blackwell Publishing Ltd
    British journal of dermatology 129 (1993), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: We report a case of adult T-cell leukaemia/lymphoma (ATLL), in whom the polymerase chain reaction (PCR) on genomic DNA from saliva demonstrated the monoclonal integration of human T-cell lymphotropic virus type-1 (HTLV-1) proviral DNA in lymphocytes in the saliva. These results provided evidence of the possibility of saliva-borne transmission of HTLV-1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2133.1993.tb00503.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...