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  • 1
    Digitale Medien
    Digitale Medien
    Thermal reactions of Pd/AlxGa1−xAs contacts (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2891-2895 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Pd/AlxGa1−xAs Schottky contacts and their thermal reactions are studied by capacitance–voltage measurements, current–voltage measurements, and x-ray diffraction. The thickness of AlxGa1−xAs consumed by the Pd/AlxGa1−xAs reaction during annealing was calculated. For annealing temperatures below 300 °C the Schottky characteristics of the diodes were good but the electrical junction moves into AlxGa1−xAs after annealing. The amount of junction movement was calculated directly from our measurements. The diffusion coefficients of Pd in AlxGa1−xAs and the activation energy were estimated. The activation energy was found to be larger for higher Al concentration. PdAl, PdAs2, PdGa5, and Pd5Ga2 were detected in the compounds formed by the Pd/AlxGa1−xAs reaction after annealing. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363141
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  • 2
    Digitale Medien
    Digitale Medien
    Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 664-670 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Compositional disordering of InGaAs/GaAs superlattices using a low-temperature-grown GaAs cap layer (LT-GaAs) by molecular beam epitaxy has been studied. The disordering of the superlattice was verified by photoluminescence and double-crystal x-ray rocking curve measurements. The Ga-vacancy-enhanced interdiffusion due to the presence of LT-GaAs was found to be the disordering mechanism. Diffusion equations and the Schrödinger's equation were solved numerically to obtain the composition profile and the transition energies in the disordered quantum well, respectively. The simulated energy shifts for samples under different annealing conditions agreed very well with the experimental results. The calculated effective diffusivity for the In–Ga interdiffusion has an activation energy of 1.63 eV, which is smaller than the activation energy 1.93 eV, for intrinsic interdiffusion. The diffusivity for the enhanced In–Ga interdiffusion due to the presence of LT-GaAs is about two orders of magnitude larger than the intrinsic In–Ga diffusivity. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360810
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  • 3
    Digitale Medien
    Digitale Medien
    Effect of disorder-induced band mixing on the conduction-band effective mass of InAlGaAs alloys lattice matched to InP (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1239-1241 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is found that the calculation of the effective mass for InAlGaAs alloys obtained from the five-band k⋅p theory is smaller than the measured value from the optically detected cyclotron resonance reported recently. We point out that the effect of disorder-induced conduction valence band mixing must be considered. This disorder effect which creates potential fluctuations is to reduce the matrix element P2 for the conduction valence band coupling in the k⋅p theoretical expression. The strength of the potential fluctuations can be described in terms of the electronegativity difference related to chemical disorder. The inclusion of the disorder effect in the (In0.53Al0.47As)x(In0.53Ga0.47As)1−x quaternary system gives a very good fit to the measured data. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362862
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  • 4
    Digitale Medien
    Digitale Medien
    Enhancement of conduction-band effective mass in III–V semiconductor alloys induced by chemical disorder (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6761-6765 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The conduction-band effective masses in InxGa1−xAs with a complete range of composition, and InAlGaAs and InGaAsP alloys covering the complete range of lattice matched to InP have been determined by far-infrared optically detected cyclotron resonance and magnetophotoconductivity measurements. It is found that the measured effective masses as a function of alloy composition are heavier than the values predicted from the five-band k⋅p theory. We show that this discrepancy can be resolved by including the effect of disorder-induced potential fluctuations that causes the wave function mixing between conduction and valence bands. We find that the strength of the potential fluctuations can be well described in terms of the Phillips electronegativity difference related to chemical disorder. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363804
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  • 5
    Digitale Medien
    Digitale Medien
    A high quantum efficiency GaInAs-InP photodetector-on-silicon substrate (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4066-4068 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the first Ga0.47In0.53As-InP photodetectors fabricated on silicon substrates, using the low-pressure metalorganic chemical vapor deposition growth technique. Quantum efficiencies of 0.34, 0.88, and 0.92, A/W at wavelengths of 0.8, 1.3, and 1.55 μm, respectively, have been obtained for the devices without antireflection coating. A reverse leakage current of 100 μA at −10 V bias was measured for 250-μm-diam diodes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.343334
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  • 6
    Digitale Medien
    Digitale Medien
    Positive and negative persistent photoconductivities in semimetallic AlxGa1−xSb/InAs quantum wells (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3152-3158 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report a detailed investigation of the "positive" persistent photoconductivity (PPC) and "negative" persistent photoconductivity (NPPC) in semimetallic AlxGa1−xSb/InAs quantum wells. The studies of the NPPC and PPC effects have been performed under various conditions, such as different photon energy of excitation, different temperature, different Al composition x, and different well width. It is found that all the previously proposed mechanisms fail to explain several of our observations. We suggest that the NPPC and PPC effects are produced principally by two competing processes. At a high temperature, the photoconduction is dominated by the photogenerated electrons in the InAs well, in which the relaxation of the excess electrons is prohibited by an energy barrier due to the trapping of photoexcited holes by deep defects in the InAs well. As a result, the PPC is observed. At low temperature, electrons in the InAs layer are photoexcited into the local potential minima induced by compositional fluctuations at the AlGaSb and InAs interface, the number of electrons in the InAs well decreases, thus the NPPC occurs. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371182
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  • 7
    Digitale Medien
    Digitale Medien
    Above-barrier states in GaAs–AlGaAs superlattices studied by photoconductivity and photoreflectance (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1460-1462 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report that the quasibound states at the above-barrier region in AlGaAs–GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. We provide concrete evidence to confirm that free-carrier confinement at barrier layer does exist. It is also found that the barrier-width dependence of the above-barrier transition energies can be described quite well by the modified Messiah's calculation. However, the simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.370965
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  • 8
    Digitale Medien
    Digitale Medien
    Optical absorption spectrum of hydrogenated amorphous silicon using photo-pyroelectric spectroscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1799-1804 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The optical absorption coefficient α of doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured for photon energies from 2.2 to 1.0 eV using photo-pyroelectric spectroscopy (PPES). A simplified experimental setup and analysis for extracting α from the PPES data are described. In PPES the temperature rise induced in the a-Si:H thin film due to weakly absorbed light is detected via a pyroelectric polymer in thermal contact with the sample. This technique presently has a sensitivity of αd(approximately-greater-than)10−3, where d is the sample thickness.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354784
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  • 9
    Digitale Medien
    Digitale Medien
    Transmission electron microscopy study of heavily delta-doped GaAs grown by molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 608-614 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: N-type and p-type delta-doped GaAs grown by molecular beam epitaxy with rather significantly high doses of Si and Be have been investigated by transmission electron microscopy (TEM). The amount of doses ranged from half a monolayer to two monolayers. The microscopic structures of the delta-doped regions and the adjacent epilayers were directly observed by TEM. The effect of impurity spreading on the heterointerfaces and superlattices was also studied. Si atoms present in Si delta-doped samples were confined to within a few atomic layers. The Be atoms present in Be delta-doped samples, however, spread over a quite wide region and caused rough heterointerfaces and wavy superlattices to form. Spreading of Be was attributed to segregation and diffusion which occurred during growth. Stacking faults were found in the delta-doped samples when they were grown at low temperatures. They could be attributed to local strain caused by heavy doping.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353370
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  • 10
    Digitale Medien
    Digitale Medien
    Influence of thin protective InAs layers on the optical quality of AlGaAs and quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2449-2452 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Influence of a thin protective but subsequently evaporated InAs layer on the regrowth of AlGaAs has been studied. It was found that although most of the InAs could be evaporated by thermal desorption, some would react with Al0.36Ga0.64As to form InAlGaAs. These InAlGaAs islands act as potential wells for carrier recombination and dominate the photoluminescence spectrum. Transmission electron microscopy photographs show that dislocations are formed near the islands. These defects are caused by lattice mismatch between AlGaAs and InAlGaAs. These islands and defects strongly affect the optical quality of surrounding Al0.36Ga0.64As and quantum wells.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351590
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