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  • 1
    Electronic Resource
    Electronic Resource
    Heteroepitaxy and characterization of CuGaSe2 layers grown by low-pressure metalorganic chemical-vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3009-3015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuGaSe2 chalcopyrite compounds were grown heteroepitaxially on both GaAs and GaP substrates by means of the low-pressure metalorganic chemical-vapor deposition method. Optical and structural properties were characterized comprehensively by photoreflectance (PR), photoluminescence (PL), x-ray diffraction, transmission electron microscopy, transmission electron diffraction, and electron-probe microanalysis. The CuGaSe2 epilayers had c(001) surface on GaAs(001) substrates and a(100) surface on GaP(001) substrates, respectively, the results being similar to the case of CuAlSe2. Energies of A, B, and C excitons associated with uppermost valence bands were determined from analysis of PR spectra, and the energies of good-quality epilayers are close to those of the bulk crystal. The slight increase of the crystal-field splitting in the valence bands were discussed in terms of the lattice strain in the epilayer caused by the lattice mismatch. Low-temperature PL spectra exhibited an intense peak at 1.71 eV, the energy being in good agreement with the A-exciton energy. A weak peak due to a free-to-acceptor transition was also observed at 1.66 eV. A broad PL peak at 1.76 eV was observed together with the intense band-edge PL at 1.67 eV, and the peak was assigned to relate to the B-exciton transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357503
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence studies in CuAlSe2 epilayers grown by low-pressure metalorganic chemical-vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1225-1232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) spectra were investigated for CuAlSe2 epilayers grown on GaAs(001) substrates by means of low-pressure metalorganic chemical-vapor deposition. PL properties were studied with relation to metalorganic precursors used for the growth. High-quality undoped epilayers exhibited PL peaks related to a free exciton (2.739 eV) and a bound exciton (2.677 eV). The other undoped epilayers exhibited PL bands at 2.3, 2.4, and 2.5 eV originating from donor-acceptor (D-A) pair recombinations. Some of them were found to have a common activation energy for the thermal quenching of 50±10 meV. The PL spectrum changed drastically by impurity doping. Intense green emissions at 2.51 and 2.43 eV were observed in Zn and Mg-doped epilayers, respectively, which were interpreted as D-A pair recombinations based on the dependencies of the PL spectra on excitation intensity, decay time, and temperature. The donor and the acceptor activation energies (ED and EA) were estimated to be 110 and 230 meV, respectively, for the Zn-related D-A pair emission at 2.51 eV. Similarly, ED and EA for CuAlSe2:Mg were estimated to be 140±10 and 270±10 meV, respectively. Furthermore, D-A pair recombinations between 2.3 and 2.5 eV for CuAlSe2:I were studied. CuAlSe2 was proven to be a promising material for short-wavelength visible-light-emitting devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358990
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  • 3
    Electronic Resource
    Electronic Resource
    Preparation and characterization of CuAlxGa1−xSe2 alloy layers grown by low-pressure metalorganic vapor phase epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3338-3345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuAlxGa1−xSe2 alloy layers were successfully grown on GaAs(001) by low-pressure metalorganic vapor phase epitaxy. The distribution coefficient of Al was unity. All alloy layers had their c-axis normal to the substrate plane. Exciton resonance energies were determined as a function of x by means of photoreflectance measurements. A quadratic dependence of exciton energies on x was confirmed. The spin-orbit splittings of the epilayers were approximately the same as that of bulk crystals. The magnitudes of crystal-field splittings were larger than that of bulk crystals, and this was explained in terms of residual tensile biaxial strain in the epilayers. The color of the low-temperature photoluminescence (PL) changed from red to crimson, orange, yellow, green, and bluish-purple with increasing x. A peak due to a free-to-acceptor transition was dominant in the PL spectra of the alloy layers. The acceptor ionization energy increased with increasing x, and the result may reflect an increase of the hole effective mass. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363245
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of the addition of a third element in a high silicon-iron alloy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5682-5683 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Concerning the decrease of the wall motion resistive magnetic properties such as magnetocrystalline anisotropy of an electric sheet, we reported that quick quenching from 1100 °C suppressed the formation of a B2 superlattice which is roughly proportional to the anisotropy. Using iron single crystals containing 5.5 wt. % silicon with the addition of a small amount of a third element such as Mo to suppress the formation of the superlattice, we describe the quenching temperature dependence of the anisotropy and saturation magnetization. A remarkable decrease of room-temperature anisotropy was found in crystals with the additional element compared to those without the element.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342273
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  • 5
    Electronic Resource
    Electronic Resource
    A novel ‘permanent’ acid-type hair color made possible with dye–metal ion complex technology (2005)
    Oxford, UK : Blackwell Science Ltd
    International journal of cosmetic science 27 (2005), S. 0 
    Details
    ISSN: 1468-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The advantages and disadvantages of oxidative permanent and acid-type semi-permanent hair colors are evident. The former provides a long-lasting ‘permanent’ color, while the latter imparts less damage to the hair. We developed a novel acid-type hair color technology that can allow an acid dye and a metal ion to form a complex inside the hair similar to the oxidative hair color. It is well known that acid dye diffuses into the hair and creates an ionic bond with the positively charged amino acid residues of hair protein. However, the dye can be extracted easily from the hair by daily shampooing due to the weakness of the bond. In order to strengthen this bond and to prevent the extraction of the dye by shampooing, an aluminum chloride ion was chosen as the metal ion component to form the dye–metal complex. A proper composition of penetration enhancers, benzyl alcohol and ethyl alcohol, was required to allow acid dyes to interact with the aluminum chloride ion after each component penetrates deeply into the hair to form a complex inside the hair. To provide color brightness and a color longevity effect to hair color, glycolic acid was also selected due to the observation that a weak acid with a small molecular weight would enhance those effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.0142-5463.2005.00265_3.x
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  • 6
    Electronic Resource
    Electronic Resource
    Fabrication and measurement of a Nb based superconducting single electron transistor (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 636-638 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new four-layer resist system was developed to fabricate small capacitance niobium tunnel junctions. Nb/AlOx/Al junctions were used to make a superconducting single electron transistor composed of two dc SQUIDs in series. The current-voltage characteristics were measured and two types of resonant tunneling of Cooper pairs were observed at different magnetic fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112255
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  • 7
    Electronic Resource
    Electronic Resource
    Diffusion and doping of Si into GaAs from undoped SiOx/SiN film (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 225-227 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion and n-type doping of Si into GaAs from a novel diffusion source consisting of an undoped SiOx/SiN double-layered film were achieved by rapid thermal annealing at 860–940 °C. The film properties of the double-layered films employed as Si diffusion sources are experimentally presented. The characteristics of the Si diffused layers were investigated by secondary ion mass spectrometry, capacitance-voltage measurement, and the Hall method. The carrier profiles exceeded 2×1018 cm−3 and featured an abrupt diffusion front, while a maximum electron concentration of 6×1018 cm−3 was obtained at 940 °C. The diffused Si profiles were consistent with the SiGa+−VGa− pair diffusion model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110348
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  • 8
    Electronic Resource
    Electronic Resource
    Penning ionization electron spectroscopy of dichlorobenzenes (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 4250-4254 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100164a017
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  • 9
    Electronic Resource
    Electronic Resource
    Penning ionization electron spectroscopy of monohalobenzenes: fluorobenzene, chlorobenzene, bromobenzene, and iodohenzene (1986)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 108 (1986), S. 6505-6511 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00281a010
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  • 10
    Electronic Resource
    Electronic Resource
    In vitro IgE-secreting cells in man I. Mitogen-independent and -dependent subpopulations (1985)
    Oxford, UK : Blackwell Publishing Ltd
    Clinical & experimental allergy 15 (1985), S. 0 
    Details
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In vitro IgE secretion by atopic and normal peripheral-blood lymphocytes was examined in culture with pokeweed mitogen or Staphylococcus aureus strain Cowan-I (StaCw) or without mitogen. IgE secreted in culture supernatants was measured with double antibody radioimmunoassay. Enumeration of IgE-secreting cells was made by a protein-A plaque assay. IgE was detected in increasing quantities in supernatants of cultured lymphocytes without mitogen up to the 12th day. IgE-plaque-forming cells were formed by the lymphocytes in large numbers on days 4–7 in cultures with mitogen. These results suggest that not only mitogen-independent but also mitogen-dependent subpopulations may exist in the IgE-secreting cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2222.1985.tb02256.x
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