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  • 1
    Electronic Resource
    Electronic Resource
    Electron trap generation in thermally grown SiO2 under Fowler–Nordheim stress (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 725-734 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron trap generation in thermally grown silicon dioxide (SiO2) during Fowler–Nordheim (FN) stress is investigated by using an aluminium-gated capacitor structure. The generated electron traps are characterized by the avalanche electron injection technique. The experimental results support the model that electron trapping in oxide follows the first-order kinetics and may have multiple-capture cross sections. It is found that both donorlike (positive charge related) and acceptorlike (neutral before capturing electron) traps are generated and they behave differently. The donorlike trap is not stable at or above room temperature and its effective density saturates as the stressing time increases, while the opposite is true for the acceptorlike trap. The electron-capture cross section of donorlike trap spreads from 10−18 to over 10−14 cm2, but the capture cross section of the generated acceptorlike trap is limited in the range of (4.5–9)× 10−17 cm2. The acceptorlike trap is generated by the interaction between free holes and SiO2 and hole trapping leads to donorlike traps. The relation between the generated trap and the as-grown trap will be discussed. Comparison of the electron traps generated by FN stress with those by irradiation and hot hole injection indicates that the electron trap generation under these different stressing conditions is controlled by the same mechanism. The necessary condition for electron trap generation is the presence of holes in the oxide, rather than a high electrical field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351334
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  • 2
    Electronic Resource
    Electronic Resource
    A comparative study of the electron trapping and thermal detrapping in SiO2 prepared by plasma and thermal oxidation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1429-1435 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preparation of silicon dioxide (SiO2) thin films by plasma anodization is a promising low temperature (≤600 °C) silicon oxidation technique. This paper investigates the electron trapping and thermal detrapping properties of the plasma grown oxide and compares them with those of the conventional thermal oxide. The avalanche electron injection measurement shows that the electron trapping in the plasma oxide is more severe. The two electron capture cross sections detected in the plasma oxide are of the order of 10−15 and 10−17 cm2, respectively. The former is absent in the thermal oxide and is a feature of oxides prepared at low temperature. The latter is also found in thermal oxide, but its chemical nature is different. Both of them are located near SiO2/silicon interface, indicating that they are related to the intermediate layer. The electron detrapping process in the plasma oxide is different from that in the thermal oxide and has a linear dependence on the logarithmic time. The detrapping is thermally activated with an activation energy of 0.63–0.75 eV. The above traps in plasma oxide can be removed by a high temperature (e.g., 960 °C) post-oxidation annealing (POA) in an inert ambient. After such a POA, the electron trapping in plasma oxide is similar to that in thermal oxides. Some speculation on the trap formation processes is included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351703
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  • 3
    Electronic Resource
    Electronic Resource
    A reflection high-energy electron diffraction study of the Si(111) surface during gas source molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5168-5172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection high-energy electron diffraction was used to monitor Si(111) growth during gas source molecular beam epitaxy using disilane (Si2H6). Depending on the substrate temperature, the growing Si(111) surface was found to exhibit hydrogenated δ(7×7), (1×1), (5×5), and (7×7) reconstructions. Within the substrate temperature range of 490 to 560 °C where growth proceeded two-dimensionally, clear and well-defined intensity oscillations could be observed in the [21¯0] azimuths. Since consecutive atomic layers on the Si(111) surface are nonequivalent, the oscillation periods were found to correspond to bilayer growth. In the two-dimensional (2D) growth regime, the oscillation frequencies, and hence the growth rates deduced, were found to increase with increasing substrate temperature and flow rate of Si2H6. At higher temperatures, there was a change from 2D layer-by-layer growth to step propagation and consequently, the intensity oscillations were weak or absent. At low temperatures (〈400 °C) where no dissociative adsorption of Si2H6 occurred, intensity oscillations were not observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350572
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  • 4
    Electronic Resource
    Electronic Resource
    Ga adatom incorporation kinetics at steps on vicinal GaAs (001) surfaces during growth of GaAs by molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4299-4304 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically examined the transition from two-dimensional nucleation to step-flow growth on variously misoriented vicinal GaAs (001) surfaces during molecular beam epitaxy using reflection high-energy electron diffraction (RHEED). The time to the first maximum of the RHEED intensity oscillations is gradually delayed as the growth mode transition temperature is approached from below as the result of an increasing number of adatoms being incorporated at steps. Detailed analysis of this delay has shown that the incorporation rate is independent of the Ga flux, but it is strongly dependent on the direction of misorientation. This means that step edges do not act as perfect sinks for adatoms, but that detachment can occur relatively easily. The energy barrier for incorporation is considerably higher for Ga- than As-terminated steps, which strongly suggests that the anisotropic growth mode transition on GaAs (001) stems mainly from the different step structures rather than anisotropic Ga adatom migration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350811
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  • 5
    Electronic Resource
    Electronic Resource
    Study of dynamics of diffusion and cluster formation of copper deposition on polyimide by optical second-harmonic generation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2655-2662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that optical second-harmonic generation (SHG) can be successfully used for in situ study of metal/polymer interfaces. With this SHG technique, Cu cluster formation on polyimide by surface diffusion and Cu diffusion into polyimide have been investigated. The diffusion coefficients of Cu clusters into polyimide at various temperatures have been determined from the measured decay of SHG signal with time. The effects of temperature, cluster size, and surface modification on diffusion have also been examined. For T 〈 Tg, the surface diffusion of Cu on polyimide to form clusters dominates over the diffusion into the bulk. The latter process becomes competitive with increasing temperature. When T (approximately-greater-than) Tg, few large-size Cu clusters can be formed on the polyimide surface. Cu diffusion into polyimide bulk can be greatly impeded by either a monolayer of Ti or by Cu clusters implanted in polyimide beforehand. In this case, Cu can wet the modified surface and form an interface between Cu and polyimide with good adhesion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351037
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  • 6
    Electronic Resource
    Electronic Resource
    A new route to high-Tc superconducting Bi–Sr–Ca–Cu–O thin films: Improved deposition efficiency and film morphology using ammonia–argon mixtures as the carrier gas (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2769-2771 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented films of the high-Tc superconductor Bi2Sr2CaCu2Ox have been prepared by a low-pressure organometallic chemical vapor deposition process using a mixture of ammonia and argon as the carrier gas together with Sr(dpm)2 (dpm-dipivaloylmethanate), Ca(dpm)2, Cu(acac)2 (acac-acetylacetonate), and triphenylbismuth as the organometallic precursors. By introducing ammonia into the carrier gas, a significant improvement in the volatility and thermal stability of both Sr(dpm)2 and Ca(dpm)2 is observed. Typical required source temperatures for Sr(dpm)2 and Ca(dpm)2 with the introduction of ammonia are about 40–50 °C lower than the source temperatures of the precursors without the introduction of ammonia. Enhancement of source volatility for Cu(acac)2 is also observed. After annealing at 865 °C in flowing oxygen, the films consist predominantly of the Bi2Sr2CaCu2Ox phase and exhibit high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼110 K and zero resistivity achieved at 74 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351052
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  • 7
    Electronic Resource
    Electronic Resource
    A quantitative investigation of electron detrapping in SiO2 under Fowler–Nordheim stress (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5989-5996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detrapping of the trapped electrons from the acceptorlike trapping sites in SiO2 under Fowler–Nordheim (FN) stress has been quantitatively investigated using Al/SiO2/Si capacitor structures. Before FN stress, the traps were charged using the avalanche electron injection technique to enhance subsequent detrapping, and facilitate its distinction from trapping in subsequent studies. The quantity of electrons detrapped was assessed from the shift in the electrical field strength near the cathode. Under FN stress with an electrical field of 8 MV/cm or over, the probability of captured electrons remaining trapped was found to be less than 20%. This probability was insensitive to the number of electrons initially trapped in the oxide, decreasing as the stressing field strength increases. Within the experimental range of this study, the transient behavior of electron detrapping cannot be satisfactorily described by the dynamic balance model and a new model is developed based on the reactions occurring in the oxide under FN stress. It is found that there is more than one mechanism contributing to the electron detrapping and that the detrapping efficiency is unrelated to the initial capture cross sections of traps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350452
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  • 8
    Electronic Resource
    Electronic Resource
    Photodissociation of ethylene at 193 nm (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 935-942 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodissociation of ethylene at 193 nm was studied by measuring the product translational energy distributions for the H+C2H3 and H2+C2H2 channels. In agreement with previous workers, it was determined that atomic and molecular elimination occur in relatively equal amounts. Using 1,1 D2CCH2 and 1,2 cis HDCCDH, it was shown that both acetylene and vinylidene are formed and that the acetylene/vinylidene ratio is approximately 2/3 in the molecular elimination. This H2 elimination channel has a translational energy distribution peaked at around 20 kcal/mol, indicating that it is a concerted process with a substantial exit barrier. It was found that the H atom elimination channel is best described as a simple bond rupture occurring after internal conversion of the electronically excited molecule to the vibrationally excited ground state ethylene. Some of the primary C2H3 product has sufficient internal energy to spontaneously decompose to H+HC≡CH. At higher laser intensity a large fraction of the C2H3, however, absorbs another photon and fragments to H+H2C=C: (1A1 and 3B2).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463196
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  • 9
    Electronic Resource
    Electronic Resource
    High-lying rovibrational states of floppy X3 triatomics by a new D3h symmetry adapted method: Application to the H+3 molecule (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 3707-3713 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A new D3h symmetry adapted approach to accurate calculation of high-lying rovibrational (J〉0) states of floppy X3 triatomic molecules is presented, extending our recent work on J=0 bound states of D3h triatomics [Z. Bacic and J. Z. H. Zhang, Chem. Phys. Lett. 184, 513 (1991)]. Three sets of Jacobi coordinates are employed, allowing construction of basis sets with full S3 permutation symmetry of the three identical nuclei. Inclusion of S3 symmetry reduces substantially the size of the final matrix eigenvalue problem and the computational effort involved. It also assures unambiguous, correct symmetry assignment of the calculated rovibrational levels. Our method is especially suitable for rotating D3h molecules with strongly coupled large amplitude motions of the three atoms. An efficient quasiadiabatic diagonalization and truncation scheme is incorporated into our methodology. Application to H+3 for J=1 produced the total of 426 well converged, symmetry assigned states up to ∼24 000 cm−1 above the ground state, far more than in any previous calculation for rotating H+3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461925
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  • 10
    Electronic Resource
    Electronic Resource
    An electrostatic microscope for synchrotron radiation x-ray absorption microspectroscopy (invited) : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 564-568 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An x-ray photoemission microscope is described that is designed for x-ray absorption imaging and spectroscopy with 1-μm spatial resolution. The energy resolution of x-ray absorption near-edge structures microspectroscopy is determined only by the bandpass of the monochromator, and not by the photoemission microscope detector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142706
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