ISSN:
1573-4889
Keywords:
Silicon oxidation
;
tracer
;
double oxidation
;
oxygen diffusion
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract This work focuses on the thermal oxidation of silicon near 1273 K using the double-tracer oxidation method. The results confirm that oxidation occurs by the transport of electrically neutral non-network oxygen through the interstitial space of the vitreous silica (ν-SiO2) scale. Simultaneously, self- (or isotopic-) diffusion occurs in the network, resulting in characteristic isotopic fraction distributions near the gas-scale interface. The self-diffusion coefficients calculated from these profiles agree with those reported for tracer diffusion in ν-SiO2, and the diffusion coefficient calculated from the scale growth is consistent with reported O2 permeation data. An important parameter that describes the double-oxidation behavior is the ratio of the value of Δ/√(D nt′),where Δ is the scale thickness grown during the second oxidation, Dn is the network self-diffusion coefficient for oxygen, and t′ is the time of the second oxidation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00666468
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